JPS561578A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS561578A
JPS561578A JP7645079A JP7645079A JPS561578A JP S561578 A JPS561578 A JP S561578A JP 7645079 A JP7645079 A JP 7645079A JP 7645079 A JP7645079 A JP 7645079A JP S561578 A JPS561578 A JP S561578A
Authority
JP
Japan
Prior art keywords
semiconductor
junction
electrode
diffused
degenerating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7645079A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP7645079A priority Critical patent/JPS561578A/en
Publication of JPS561578A publication Critical patent/JPS561578A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To provide high photoelectric conversion efficiency in a semiconductor device by degenerating the Fermi level of a P-type semiconductor of a nonmonocrystalline semiconductor having a P-N junction such as, photoelectric cell, a solar battery or the like to a valence band interior and also degenerating in an N-type semiconductor to the conductor interior by the addition of impurity thereto. CONSTITUTION:A P-N junction is formed by using nonmonocrystalline P-type semiconductor 11 and an N-type semiconductor 12, an electrode 17 is mounted at the end of the semiconductor 11, a confronting electrode 18 is mounted at the end of the semiconductor 12, and a load resistor 13 is connected between the electrodes. In this manner, the element is formed, light 7 is radiated to the junction, the Halls thus produced are diffused to the semiconductor 11 side, and electrons are diffused to the semiconductor 12 side, and a potential 14 is produced at both sides of the junction. In this configuration, in order to delay the recombination of the carrier produced by the light excitation at the long wavelength region, in which has metallic property in single substance and enables determination of conducting type in the semiconductor is diffused under the electrode 17, and Sb or the like is diffused under the electrode 18 to form degenerating regions 21 and 22.
JP7645079A 1979-06-18 1979-06-18 Manufacture of semiconductor device Pending JPS561578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7645079A JPS561578A (en) 1979-06-18 1979-06-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7645079A JPS561578A (en) 1979-06-18 1979-06-18 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS561578A true JPS561578A (en) 1981-01-09

Family

ID=13605482

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7645079A Pending JPS561578A (en) 1979-06-18 1979-06-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS561578A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5810871A (en) * 1981-07-13 1983-01-21 Agency Of Ind Science & Technol Amorphous solar battery
JPS5848480A (en) * 1981-09-16 1983-03-22 Sanyo Electric Co Ltd Light sensitive device
JPS599979A (en) * 1982-06-30 1984-01-19 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン Semiconductor structure
JPS6066876A (en) * 1983-09-22 1985-04-17 Fuji Xerox Co Ltd Photoelectric conversion element
JPH04211179A (en) * 1991-03-27 1992-08-03 Kanegafuchi Chem Ind Co Ltd Switching element
US5242505A (en) * 1991-12-03 1993-09-07 Electric Power Research Institute Amorphous silicon-based photovoltaic semiconductor materials free from Staebler-Wronski effects
US5446284A (en) * 1994-01-25 1995-08-29 Loral Infrared & Imaging Systems, Inc. Monolithic detector array apparatus

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5810871A (en) * 1981-07-13 1983-01-21 Agency Of Ind Science & Technol Amorphous solar battery
JPS5848480A (en) * 1981-09-16 1983-03-22 Sanyo Electric Co Ltd Light sensitive device
JPS599979A (en) * 1982-06-30 1984-01-19 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン Semiconductor structure
JPS6329423B2 (en) * 1982-06-30 1988-06-14 Intaanashonaru Bijinesu Mashiinzu Corp
JPS6066876A (en) * 1983-09-22 1985-04-17 Fuji Xerox Co Ltd Photoelectric conversion element
JPH04211179A (en) * 1991-03-27 1992-08-03 Kanegafuchi Chem Ind Co Ltd Switching element
US5242505A (en) * 1991-12-03 1993-09-07 Electric Power Research Institute Amorphous silicon-based photovoltaic semiconductor materials free from Staebler-Wronski effects
US5446284A (en) * 1994-01-25 1995-08-29 Loral Infrared & Imaging Systems, Inc. Monolithic detector array apparatus

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