JPS5539618A - Manufacturing of semiconductor device - Google Patents
Manufacturing of semiconductor deviceInfo
- Publication number
- JPS5539618A JPS5539618A JP11224178A JP11224178A JPS5539618A JP S5539618 A JPS5539618 A JP S5539618A JP 11224178 A JP11224178 A JP 11224178A JP 11224178 A JP11224178 A JP 11224178A JP S5539618 A JPS5539618 A JP S5539618A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- layers
- radiation
- electron
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Thyristors (AREA)
Abstract
PURPOSE: To provide a parting layer in a compound semiconductor device by forming a p-type layer using Al, then by annealing after irradiating a radiation.
CONSTITUTION: Two p-layers 12 and 14, and a n-layer 11 are made by diffusing B and P respectively into a n-type Si 13 to compose a SCRA; then a diode B consisting of layers 13 and 14 is inversely connected in parallel. A parting layer C which surrounds the diode B is formed. Two p-layers 121 and 141 in the layer C have Al as an impurity. They become stable isolation layers after an anode 16 and a cathode 15 are added to form an inversely conductive SCR, and an electron beam 17 is irradiated before annealing at 350°C for 400 minutes. A remarkable separation effect is obtained when Al atoms are used in a conductive means for the p-layer in a separation area even in other compound devices. An electron radiation dose of 1×1013 to 1×1016 electron/cm2 is desirable in actual use, if it is less than that, no radiation effect is expected, while if the dose is more than that, forward voltage drop increases. By so doing, a highly accurate parting layer is formed with a good reproducibility.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11224178A JPS6016108B2 (en) | 1978-09-14 | 1978-09-14 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11224178A JPS6016108B2 (en) | 1978-09-14 | 1978-09-14 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5539618A true JPS5539618A (en) | 1980-03-19 |
JPS6016108B2 JPS6016108B2 (en) | 1985-04-23 |
Family
ID=14581768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11224178A Expired JPS6016108B2 (en) | 1978-09-14 | 1978-09-14 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6016108B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6123704A (en) * | 1984-07-11 | 1986-02-01 | Hitachi Powdered Metals Co Ltd | Sintered solid lubricating member |
JPH0384217A (en) * | 1989-08-28 | 1991-04-09 | Ntn Corp | Manufacture of porous slide bearing |
US5079175A (en) * | 1989-12-19 | 1992-01-07 | Eupec Europaeische Gesellsch. F. Liestungshalbleiter Mbh+Co. Kg | Process for the manufacture of short circuits on the anode side of thyristors |
JP2002076010A (en) * | 2000-07-10 | 2002-03-15 | Abb Semiconductors Ag | Method of manufacturing high speed power diode and high speed power diode manufactured by the same |
-
1978
- 1978-09-14 JP JP11224178A patent/JPS6016108B2/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6123704A (en) * | 1984-07-11 | 1986-02-01 | Hitachi Powdered Metals Co Ltd | Sintered solid lubricating member |
JPH0384217A (en) * | 1989-08-28 | 1991-04-09 | Ntn Corp | Manufacture of porous slide bearing |
US5079175A (en) * | 1989-12-19 | 1992-01-07 | Eupec Europaeische Gesellsch. F. Liestungshalbleiter Mbh+Co. Kg | Process for the manufacture of short circuits on the anode side of thyristors |
JP2002076010A (en) * | 2000-07-10 | 2002-03-15 | Abb Semiconductors Ag | Method of manufacturing high speed power diode and high speed power diode manufactured by the same |
Also Published As
Publication number | Publication date |
---|---|
JPS6016108B2 (en) | 1985-04-23 |
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