JPS5539618A - Manufacturing of semiconductor device - Google Patents

Manufacturing of semiconductor device

Info

Publication number
JPS5539618A
JPS5539618A JP11224178A JP11224178A JPS5539618A JP S5539618 A JPS5539618 A JP S5539618A JP 11224178 A JP11224178 A JP 11224178A JP 11224178 A JP11224178 A JP 11224178A JP S5539618 A JPS5539618 A JP S5539618A
Authority
JP
Japan
Prior art keywords
layer
layers
radiation
electron
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11224178A
Other languages
Japanese (ja)
Other versions
JPS6016108B2 (en
Inventor
Toshikatsu Shirasawa
Nobutake Konishi
Mitsuo Yanagi
Naohiro Monma
Mitsuru Hirao
Masahiro Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11224178A priority Critical patent/JPS6016108B2/en
Publication of JPS5539618A publication Critical patent/JPS5539618A/en
Publication of JPS6016108B2 publication Critical patent/JPS6016108B2/en
Expired legal-status Critical Current

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  • Thyristors (AREA)

Abstract

PURPOSE: To provide a parting layer in a compound semiconductor device by forming a p-type layer using Al, then by annealing after irradiating a radiation.
CONSTITUTION: Two p-layers 12 and 14, and a n-layer 11 are made by diffusing B and P respectively into a n-type Si 13 to compose a SCRA; then a diode B consisting of layers 13 and 14 is inversely connected in parallel. A parting layer C which surrounds the diode B is formed. Two p-layers 121 and 141 in the layer C have Al as an impurity. They become stable isolation layers after an anode 16 and a cathode 15 are added to form an inversely conductive SCR, and an electron beam 17 is irradiated before annealing at 350°C for 400 minutes. A remarkable separation effect is obtained when Al atoms are used in a conductive means for the p-layer in a separation area even in other compound devices. An electron radiation dose of 1×1013 to 1×1016 electron/cm2 is desirable in actual use, if it is less than that, no radiation effect is expected, while if the dose is more than that, forward voltage drop increases. By so doing, a highly accurate parting layer is formed with a good reproducibility.
COPYRIGHT: (C)1980,JPO&Japio
JP11224178A 1978-09-14 1978-09-14 Manufacturing method of semiconductor device Expired JPS6016108B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11224178A JPS6016108B2 (en) 1978-09-14 1978-09-14 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11224178A JPS6016108B2 (en) 1978-09-14 1978-09-14 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5539618A true JPS5539618A (en) 1980-03-19
JPS6016108B2 JPS6016108B2 (en) 1985-04-23

Family

ID=14581768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11224178A Expired JPS6016108B2 (en) 1978-09-14 1978-09-14 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6016108B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6123704A (en) * 1984-07-11 1986-02-01 Hitachi Powdered Metals Co Ltd Sintered solid lubricating member
JPH0384217A (en) * 1989-08-28 1991-04-09 Ntn Corp Manufacture of porous slide bearing
US5079175A (en) * 1989-12-19 1992-01-07 Eupec Europaeische Gesellsch. F. Liestungshalbleiter Mbh+Co. Kg Process for the manufacture of short circuits on the anode side of thyristors
JP2002076010A (en) * 2000-07-10 2002-03-15 Abb Semiconductors Ag Method of manufacturing high speed power diode and high speed power diode manufactured by the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6123704A (en) * 1984-07-11 1986-02-01 Hitachi Powdered Metals Co Ltd Sintered solid lubricating member
JPH0384217A (en) * 1989-08-28 1991-04-09 Ntn Corp Manufacture of porous slide bearing
US5079175A (en) * 1989-12-19 1992-01-07 Eupec Europaeische Gesellsch. F. Liestungshalbleiter Mbh+Co. Kg Process for the manufacture of short circuits on the anode side of thyristors
JP2002076010A (en) * 2000-07-10 2002-03-15 Abb Semiconductors Ag Method of manufacturing high speed power diode and high speed power diode manufactured by the same

Also Published As

Publication number Publication date
JPS6016108B2 (en) 1985-04-23

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