JPS55141766A - Manufacturing of semiconductor light position detector - Google Patents
Manufacturing of semiconductor light position detectorInfo
- Publication number
- JPS55141766A JPS55141766A JP4897279A JP4897279A JPS55141766A JP S55141766 A JPS55141766 A JP S55141766A JP 4897279 A JP4897279 A JP 4897279A JP 4897279 A JP4897279 A JP 4897279A JP S55141766 A JPS55141766 A JP S55141766A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- openings
- silicon oxide
- position detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- -1 boron ion Chemical class 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
PURPOSE:To provide a light position detector having low dark current and high photoelectric conversion efficiency by implanting p-type impurity ion with an accelerating energy becoming maximum impurity density in the boundary between an n-type silicon wafer and a silicon oxide layer formed thereon. CONSTITUTION:An n-type silicon wafer 11 formed with a phosphorus diffused layer 25 on one surface is prepared, and silicon oxide layers 26, 27 are formed on both surfaces thereof. Then, openings 28, 29 corresponding to position detecting electrodes are perforated partially at the layer 26, boron is diffused through the openings to form p<+>-type conductive layers 30, 31 thereon. Then, a square portion 32 interposed between the openings 29 and 29 of the layer 26 is removed, and a silicon oxide layer 33 is newly formed as a reflection preventive film having a thickness corresponding to the one-fourth of the wavelength of the light to be detected on this portion. Then, boron ion is implanted at small incident angle through the layer 33 to form a p-type layer 34 thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4897279A JPS55141766A (en) | 1979-04-23 | 1979-04-23 | Manufacturing of semiconductor light position detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4897279A JPS55141766A (en) | 1979-04-23 | 1979-04-23 | Manufacturing of semiconductor light position detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55141766A true JPS55141766A (en) | 1980-11-05 |
| JPS5739537B2 JPS5739537B2 (en) | 1982-08-21 |
Family
ID=12818176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4897279A Granted JPS55141766A (en) | 1979-04-23 | 1979-04-23 | Manufacturing of semiconductor light position detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55141766A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57159073A (en) * | 1981-03-26 | 1982-10-01 | Minolta Camera Co Ltd | Semiconductor position detector |
| CN103400872A (en) * | 2013-06-30 | 2013-11-20 | 北京工业大学 | Structure and preparation method of surface electric field enhanced PIN photoelectric detector |
| WO2014101601A1 (en) * | 2012-12-27 | 2014-07-03 | 同方威视技术股份有限公司 | Photoelectric detector and manufacturing method therefor, and radiation detector |
-
1979
- 1979-04-23 JP JP4897279A patent/JPS55141766A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57159073A (en) * | 1981-03-26 | 1982-10-01 | Minolta Camera Co Ltd | Semiconductor position detector |
| WO2014101601A1 (en) * | 2012-12-27 | 2014-07-03 | 同方威视技术股份有限公司 | Photoelectric detector and manufacturing method therefor, and radiation detector |
| CN103400872A (en) * | 2013-06-30 | 2013-11-20 | 北京工业大学 | Structure and preparation method of surface electric field enhanced PIN photoelectric detector |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5739537B2 (en) | 1982-08-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4667060A (en) | Back junction photovoltaic solar cell | |
| US4133698A (en) | Tandem junction solar cell | |
| KR101052030B1 (en) | Electromagnetic radiation converter | |
| CN102187469B (en) | Electromagnetic radiation converter and a battery | |
| JPS6215864A (en) | Manufacture of solar cell | |
| US4029518A (en) | Solar cell | |
| CN109545804B (en) | Light side incident blue light sensitization silicon avalanche photodiode array device | |
| Ohtsuka et al. | Bifacial silicon solar cells with 21· 3% front efficiency and 19· 8% rear efficiency | |
| US4141756A (en) | Method of making a gap UV photodiode by multiple ion-implantations | |
| KR102547804B1 (en) | Bifacial silicon solar cell and method for manufacturing the same | |
| KR102018650B1 (en) | Solar cell and method for manufacturing the same | |
| US4028720A (en) | Photovoltaic device | |
| JPS55141766A (en) | Manufacturing of semiconductor light position detector | |
| US4246043A (en) | Yttrium oxide antireflective coating for solar cells | |
| CN109712999B (en) | Blue light sensitization silicon-based avalanche photodiode array device | |
| ES8504407A1 (en) | Photoelectric cell and method of producing it. | |
| JPS5356988A (en) | Photovoltaic element | |
| JP3369847B2 (en) | Photovoltaic element | |
| JPS5587007A (en) | Semiconductor photo position detector | |
| JPH03206670A (en) | Solar cell | |
| JPS5613780A (en) | Preparation of semiconductor device | |
| US20120211072A1 (en) | Solar Cell And Method Of Manufacturing Same | |
| JPS57155784A (en) | Photodiode | |
| JPS61231776A (en) | Light detecting semiconductor device | |
| JPS5833880A (en) | Semiconductor photodetector |