JPS61231776A - Light detecting semiconductor device - Google Patents
Light detecting semiconductor deviceInfo
- Publication number
- JPS61231776A JPS61231776A JP60072748A JP7274885A JPS61231776A JP S61231776 A JPS61231776 A JP S61231776A JP 60072748 A JP60072748 A JP 60072748A JP 7274885 A JP7274885 A JP 7274885A JP S61231776 A JPS61231776 A JP S61231776A
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- layer
- semiconductor device
- ultraviolet light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 239000012535 impurity Substances 0.000 claims abstract description 8
- 238000001514 detection method Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052710 silicon Inorganic materials 0.000 abstract description 12
- 239000010703 silicon Substances 0.000 abstract description 12
- 238000009792 diffusion process Methods 0.000 abstract description 9
- 229910052796 boron Inorganic materials 0.000 abstract description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 2
- 230000003449 preventive effect Effects 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- -1 boron ions Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 206010034960 Photophobia Diseases 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 208000013469 light sensitivity Diseases 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、主として紫外光に高感度な光検知半導体装置
に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention mainly relates to a photodetecting semiconductor device that is highly sensitive to ultraviolet light.
（従来の技術）
従来、紫外光を検出する光検知半導体装置は、第３図に
示すような断面構造をもっている。同図において１はＰ
型導電層（ｐ型拡散層）、２は反射°防止膜である。こ
こで示したのはシリコンダイオードである。紫外光での
シリコンの吸収係数は大きく、表面近傍で大部分は吸収
される。このため５ｐ型導電層１を薄くする工夫がなさ
れ、たとえば、ボロンのイオン注入により形成されてい
た。また、反射防止膜２の最適化等で、紫外光感度の向
上をはかっていた。なお、同図において、３はｎ＋シリ
コン層、４はｎ型シリコン層、５はｐ０ガードリング層
、６は表面電極、７は裏面電極である。(Prior Art) Conventionally, a photodetecting semiconductor device for detecting ultraviolet light has a cross-sectional structure as shown in FIG. In the same figure, 1 is P
type conductive layer (p-type diffusion layer), 2 is an anti-reflection film. What is shown here is a silicon diode. Silicon has a large absorption coefficient for ultraviolet light, and most of it is absorbed near the surface. For this reason, efforts have been made to make the 5p type conductive layer 1 thinner, for example by implanting boron ions. Furthermore, efforts were made to improve ultraviolet light sensitivity by optimizing the antireflection film 2 and the like. In the figure, 3 is an n+ silicon layer, 4 is an n-type silicon layer, 5 is a p0 guard ring layer, 6 is a front electrode, and 7 is a back electrode.
（発明が解決しようとする問題点）
従来の構成では、Ｐ型導電層を制御よく薄く形成し、感
度の均一化を図り、さらに反射防止膜部等の形成工程を
導入しなければならず１歩留りのばらつきが大きく、工
程が多いにもかかわらず、紫外光感度がそ九はど高くな
らない欠点があった。(Problems to be Solved by the Invention) In the conventional structure, it is necessary to form a thin P-type conductive layer with good control, to achieve uniform sensitivity, and to introduce a process for forming an anti-reflection film. Despite the large variation in yield and the large number of steps involved, there were disadvantages in that the sensitivity to ultraviolet light was not very high.
本発明の目的は、従来の欠点を解消し、紫外光に高感度
で、歩留りのよい光検知半導体装置を提供することであ
る。SUMMARY OF THE INVENTION An object of the present invention is to provide a photodetecting semiconductor device that eliminates the conventional drawbacks, is highly sensitive to ultraviolet light, and has a high yield.
（問題点を解決するための手段）
本発明の光検知半導体装置は、高濃度の不純物濃度を有
する第１の半導体領域上に少なくとも５×１０″３ＣＩ
１１−’以下の不純物濃度を有する第２の同形の半導体
領域を形成し、前記第１、第２の半導体領域と異なる導
電形を有する第３の半導体領域を交互に縞状に形成する
ものである。(Means for Solving the Problems) The photodetecting semiconductor device of the present invention includes at least 5×10″3 CI on a first semiconductor region having a high impurity concentration.
A second semiconductor region of the same shape having an impurity concentration of 11-' or less is formed, and third semiconductor regions having a conductivity type different from the first and second semiconductor regions are alternately formed in a striped shape. be.
また、第３の半導体領域の縞状幅および、前記半導体領
域の縞状間隔がそれぞれ、１０ないし５０μｍの範囲に
選定されたものである。Further, the striped width of the third semiconductor region and the striped interval of the semiconductor regions are each selected to be in the range of 10 to 50 μm.
（作 用）
上記構成により、吸収係数の大きい紫外光は表面近傍に
ひろがった空乏層内で吸収され、紫外光に高感度な光電
変換を行なう光検知半導体装置を得ることができる。(Function) With the above configuration, ultraviolet light having a large absorption coefficient is absorbed within the depletion layer extending near the surface, and a photodetecting semiconductor device that performs photoelectric conversion with high sensitivity to ultraviolet light can be obtained.
（実施例）
本発明の一実施例を第１図ないし第２図に基づいて説明
する。第１図は本発明の光検知半導体装置の断面図であ
り、第２図は同表面パターン図である。同図において第
３図と同じ部分に関しては同一符号を付しその説明を省
略する。(Example) An example of the present invention will be described based on FIGS. 1 and 2. FIG. 1 is a sectional view of the photodetecting semiconductor device of the present invention, and FIG. 2 is a surface pattern diagram thereof. In this figure, the same parts as in FIG. 3 are designated by the same reference numerals, and their explanation will be omitted.
第１図において、高濃度の不純物濃度を有するｎ型導電
形の領域であるｎ＋型シリコン層３の上にＩ Ｘ １０
１３ａｎ−３の不純物濃度を有する高抵抗領域が形成さ
れており、厚さは３０μｍで、エピタキシアル成長で形
成した。ｐｎ接合を形成するために。In FIG. 1, on an n+ type silicon layer 3 which is an n type conductivity type region having a high impurity concentration, I
A high resistance region having an impurity concentration of 13an-3 was formed, the thickness was 30 μm, and it was formed by epitaxial growth. to form a pn junction.
まず５０にｅｖの加速エネルギーにより、５Ｘ１０”ａ
ｎ〜２のドーズ量によりボロンをイオン注入する。First, by the acceleration energy of 50 ev, 5X10"a
Boron ions are implanted at a dose of n~2.
引きつづき１５０Ｋｅｖの加速エネルギーにより、ｌＸ
１０１５ａｎ−”のドーズ量によりボロンをイオン注入
して形成する。５は耐圧を向上させるためのピガードリ
ング層で、Ｐ″″拡散層１と同形のボロンを拡散し、約
２μｍの拡散深さである。２は、減圧ＣＶＤ法による窒
化シリコンの反射防止膜であり、紫外領域での反射防止
効果をもたせである。Continuing with the acceleration energy of 150 Kev, lX
It is formed by implanting boron ions at a dose of 1015 an-''. 5 is a Pigard ring layer for improving the withstand voltage, and boron having the same shape as the P'' diffusion layer 1 is diffused to a diffusion depth of about 2 μm. 2 is an antireflection film made of silicon nitride produced by low pressure CVD, and has an antireflection effect in the ultraviolet region.
第２図は。本実施例による表面パターン図であり、Ｐ１
拡散層１と高抵抗領域であるｎ型シリコ２層４が縞状に
交互にくり返し形成され、それぞれの幅は１０ないし５
０μｍの範囲で選定され、具体例として、ともに２０μ
ｍで形成されている。パターン幅は、逆バイアス５ｖを
印加した場合にも、高抵抗領域にも空気層が十分に広が
り、効率よくキャリアをドリフト電流としてとり出すこ
とが可能な幅から決定した。Figure 2 is. It is a surface pattern diagram according to the present example, and P1
Diffusion layers 1 and n-type silicon 2 layers 4, which are high resistance regions, are alternately formed in stripes, each having a width of 10 to 5.
Both are selected in the range of 0μm, and as a specific example, both are 20μm.
It is formed by m. The pattern width was determined from a width that allows the air layer to sufficiently spread even in the high resistance region even when a reverse bias of 5 V is applied, and carriers can be extracted efficiently as a drift current.
本発明において、２層の形成を縞状に行なっているため
、２層のシート抵抗が従来に較べ増大する。シート抵抗
の増大は、周波数応答性の低下をもたらすため、高濃度
で拡散深さを深くする必要がある。このため、本実施例
においては、中・高の加速エネルギーの２段階イオン注
入によりボロンを拡散させ、シート抵抗の低減を行なっ
ている。In the present invention, since the two layers are formed in a striped manner, the sheet resistance of the two layers is increased compared to the conventional method. Since an increase in sheet resistance causes a decrease in frequency response, it is necessary to increase the diffusion depth at a high concentration. Therefore, in this embodiment, boron is diffused by two-step ion implantation with medium and high acceleration energies to reduce the sheet resistance.
また、公知のボロン拡散方法において、ＳｉＯ□膜をマ
スクとして１選択拡散を行なう場合、２層と高抵抗領域
において、表面に２０００ないし３０００人の段差が生
じる。このような段差は、５ｉｎ２−Ｓｉ界面近傍にお
ける、逆バイアス印加時の空乏層の拡がりに歪をもたら
し、紫外光感度の低下をもたらす。Further, in the known boron diffusion method, when selective diffusion is performed using the SiO□ film as a mask, a step difference of 2,000 to 3,000 people occurs on the surface between the second layer and the high resistance region. Such a step causes distortion in the expansion of the depletion layer near the 5in2-Si interface when a reverse bias is applied, resulting in a decrease in ultraviolet light sensitivity.
このため、本実施例において、ボロンのイオン注入法を
用い、しかも、レジストをマスクとする方法を用い、Ｓ
ｉＯ□−Ｓｉ界面の段差を小さくしている６なお、本実
施例においては、ｎ″″″基板用した場合について述べ
たが、２３層を００層に、ｎ型の高抵抗層をｐ型にして
もよい。Therefore, in this example, boron ion implantation was used, and a resist was used as a mask.
The step difference at the iO□-Si interface is made small.6 In this example, the case where an n'''' substrate was used was described, but the 23 layer was replaced with a 00 layer, and the n-type high resistance layer was replaced with a p-type layer. You can also do this.
（発明の効果）
本発明によれば、２層と高抵抗領域を交互に縞状に形成
することで、シリコン表面の近傍で吸収される紫外光領
域の光電感度を従来に比較して約５０％の量子効率の増
大（入射光波長３６５μｍ）を実現できた。また従来と
同様のシリコン基板の仕様によれば、紫外光領域から近
赤外光領域にわたり、高感度な受光素子が得られる効果
がある。(Effects of the Invention) According to the present invention, by forming two layers and high resistance regions alternately in a striped pattern, the photoelectric sensitivity in the ultraviolet light region absorbed near the silicon surface is improved by about 50% compared to the conventional method. % increase in quantum efficiency (incident light wavelength: 365 μm). Further, according to the same specifications of the silicon substrate as in the past, a highly sensitive light-receiving element can be obtained from the ultraviolet light region to the near-infrared light region.
第１図は本発明の一実施例による光検知半導体装置の断
面図、第２図は同チップパターン図、第３図は従来の光
検知半導体装置の断面図である。
１ ・・・ｐ１拡散層、 ２ ・・・反射防止膜、 ３
・・・ｎ＋型シリコン層、 ４ ・・・ ｎ型シリコ
ン層、５ ・・・ｐ１ガードリング層、 ６ ・・表面
電極、７ ・・・裏面電極。
第 １ 図
第２図
第３因
１・・・ｐヤ導屯啼
（ｐ”＋値引FIG. 1 is a sectional view of a photodetecting semiconductor device according to an embodiment of the present invention, FIG. 2 is a chip pattern diagram of the same, and FIG. 3 is a sectional view of a conventional photodetecting semiconductor device. 1... p1 diffusion layer, 2... antireflection film, 3
... n+ type silicon layer, 4 ... n type silicon layer, 5 ... p1 guard ring layer, 6 ... surface electrode, 7 ... back surface electrode. Figure 1 Figure 2 Figure 3 Factor 1... p ya guidance (p” + discount
Claims (2)
に少なくとも５×１０＾１＾３ｃｍ＾−＾３以下の不純
物濃度を有する第２の同形の半導体領域を形成し、前記
第１、第２の半導体領域と異なる導電形を有する第３の
半導体領域を交互に縞状に形成することを特徴とする光
検知半導体装置。(1) A second semiconductor region of the same shape having an impurity concentration of at least 5×10^1^3 cm^-^3 or less is formed on the first semiconductor region having a high impurity concentration; A photodetecting semiconductor device characterized in that third semiconductor regions having a conductivity type different from that of the second semiconductor regions are formed alternately in a striped pattern.
域の縞状間隔がそれぞれ、１０ないし５０μｍの範囲に
選定されたことを特徴とする特許請求の範囲第（１）項
記載の光検知半導体装置。(2) The light according to claim (1), wherein the stripe width of the third semiconductor region and the stripe interval of the semiconductor regions are each selected in the range of 10 to 50 μm. Detection semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60072748A JPS61231776A (en) | 1985-04-08 | 1985-04-08 | Light detecting semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60072748A JPS61231776A (en) | 1985-04-08 | 1985-04-08 | Light detecting semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61231776A true JPS61231776A (en) | 1986-10-16 |
Family
ID=13498283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60072748A Pending JPS61231776A (en) | 1985-04-08 | 1985-04-08 | Light detecting semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61231776A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0488063U (en) * | 1990-12-18 | 1992-07-30 | ||
| EP0986110A1 (en) * | 1998-09-10 | 2000-03-15 | Electrowatt Technology Innovation AG | Light receiving semiconductor device and its use in flame control |
| JP2005536035A (en) * | 2002-05-24 | 2005-11-24 | フラウンホーファー−ゲゼルシャフト・ツール・フェルデルング・デル・アンゲヴァンテン・フォルシュング・アインゲトラーゲネル・フェライン | Photodiode |
| JP2006128592A (en) * | 2004-10-28 | 2006-05-18 | Samsung Electro Mech Co Ltd | Multi-wavelength light receiving element and method of fabricating the same |
| WO2015141356A1 (en) * | 2014-03-18 | 2015-09-24 | シャープ株式会社 | Photoelectric conversion element and photoelectric conversion device using same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS594182A (en) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | Semiconductor photodetector |
| JPS59124177A (en) * | 1982-12-29 | 1984-07-18 | Shimadzu Corp | Planar diffusion type electromagnetic wave detecting diode |
| JPS6059787A (en) * | 1983-09-13 | 1985-04-06 | Fujitsu Ltd | Semiconductor photodetector |
-
1985
- 1985-04-08 JP JP60072748A patent/JPS61231776A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS594182A (en) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | Semiconductor photodetector |
| JPS59124177A (en) * | 1982-12-29 | 1984-07-18 | Shimadzu Corp | Planar diffusion type electromagnetic wave detecting diode |
| JPS6059787A (en) * | 1983-09-13 | 1985-04-06 | Fujitsu Ltd | Semiconductor photodetector |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0488063U (en) * | 1990-12-18 | 1992-07-30 | ||
| EP0986110A1 (en) * | 1998-09-10 | 2000-03-15 | Electrowatt Technology Innovation AG | Light receiving semiconductor device and its use in flame control |
| US6246099B1 (en) | 1998-09-10 | 2001-06-12 | Electrowatt Technology Innovation Ag | Photosensitive semiconductor element having an outer layer divided into mutually spaced regions |
| JP2005536035A (en) * | 2002-05-24 | 2005-11-24 | フラウンホーファー−ゲゼルシャフト・ツール・フェルデルング・デル・アンゲヴァンテン・フォルシュング・アインゲトラーゲネル・フェライン | Photodiode |
| JP2006128592A (en) * | 2004-10-28 | 2006-05-18 | Samsung Electro Mech Co Ltd | Multi-wavelength light receiving element and method of fabricating the same |
| WO2015141356A1 (en) * | 2014-03-18 | 2015-09-24 | シャープ株式会社 | Photoelectric conversion element and photoelectric conversion device using same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9236519B2 (en) | Geiger-mode avalanche photodiode with high signal-to-noise ratio, and corresponding manufacturing process | |
| JP2954034B2 (en) | Single carrier type solid state radiation detector | |
| US9214588B2 (en) | Wavelength sensitive sensor photodiodes | |
| US20100282310A1 (en) | Electromagnetic emission converter | |
| KR101111215B1 (en) | Electromagnetic radiation converter and a battery | |
| JP2002057352A (en) | Solar battery and manufacturing method | |
| JPH04505233A (en) | Avalanche photodiode | |
| US3812518A (en) | Photodiode with patterned structure | |
| US4129878A (en) | Multi-element avalanche photodiode having reduced electrical noise | |
| US4141756A (en) | Method of making a gap UV photodiode by multiple ion-implantations | |
| JPH0346279A (en) | Hetero junction photodiode | |
| JPS61231776A (en) | Light detecting semiconductor device | |
| JP3607385B2 (en) | Silicon avalanche photodiode | |
| JPH0527997B2 (en) | ||
| US5179431A (en) | Semiconductor photodetection device | |
| JPS59127883A (en) | Photosensitive semiconductor device | |
| RU2240631C1 (en) | Photodetector | |
| JPH0563030B2 (en) | ||
| JPH0559590B2 (en) | ||
| JPS5896777A (en) | Solar battery | |
| JPS6218774A (en) | Light-accepting semiconductor device | |
| JPS55141766A (en) | Manufacturing of semiconductor light position detector | |
| KR900005127B1 (en) | Silicon photo diode for low sensing | |
| JPS59145579A (en) | Semiconductor light-receptor | |
| JPH0494579A (en) | Semiconductor photodetector |