JPS57181176A - High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor - Google Patents

High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor

Info

Publication number
JPS57181176A
JPS57181176A JP56066689A JP6668981A JPS57181176A JP S57181176 A JPS57181176 A JP S57181176A JP 56066689 A JP56066689 A JP 56066689A JP 6668981 A JP6668981 A JP 6668981A JP S57181176 A JPS57181176 A JP S57181176A
Authority
JP
Japan
Prior art keywords
approx
high voltage
thin film
amorphous
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56066689A
Other languages
Japanese (ja)
Other versions
JPH0340515B2 (en
Inventor
Yoshihiro Hamakawa
Yoshihisa Owada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Priority to JP56066689A priority Critical patent/JPS57181176A/en
Priority to US06/266,064 priority patent/US4388482A/en
Publication of JPS57181176A publication Critical patent/JPS57181176A/en
Priority to JP2308025A priority patent/JPH03188682A/en
Publication of JPH0340515B2 publication Critical patent/JPH0340515B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System including AIVBIV alloys, e.g. SiGe, SiC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

PURPOSE:To improve short and open-circuit voltages for the enhancement of photoelectric conversion efficiency, by using the doped thin film of an amorphous semiconductor with optical band gap, electric conductivity and diffusion potential over the fixed value on the side of light irradiation. CONSTITUTION:As the amorphous silicon doped thin film on the side of light irradiation in a Pin type photoelectric element, a thin film with optical band gap of approx. 1.85eV or more, electric conductivity of approx. 10<-3>(OMEGA.cm)<-1> or more at 20 deg.C and diffusion potential of approx. 1.1V or more in case of Pin junction is used. Thus, photoelectric conversion efficiency is enhanced.
JP56066689A 1981-01-29 1981-04-30 High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor Granted JPS57181176A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56066689A JPS57181176A (en) 1981-04-30 1981-04-30 High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor
US06/266,064 US4388482A (en) 1981-01-29 1981-05-19 High-voltage photovoltaic cell having a heterojunction of amorphous semiconductor and amorphous silicon
JP2308025A JPH03188682A (en) 1981-04-30 1990-11-13 High potential amorphous semiconductor/amorphous silicon heterojunction photovoltaic element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56066689A JPS57181176A (en) 1981-04-30 1981-04-30 High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2308025A Division JPH03188682A (en) 1981-04-30 1990-11-13 High potential amorphous semiconductor/amorphous silicon heterojunction photovoltaic element
JP3164044A Division JPH0722633A (en) 1991-02-15 1991-02-15 High voltage amorphous semiconductor/amorphous silicon hetero junction semiconductor device

Publications (2)

Publication Number Publication Date
JPS57181176A true JPS57181176A (en) 1982-11-08
JPH0340515B2 JPH0340515B2 (en) 1991-06-19

Family

ID=13323147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56066689A Granted JPS57181176A (en) 1981-01-29 1981-04-30 High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor

Country Status (1)

Country Link
JP (1) JPS57181176A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5868046U (en) * 1981-11-02 1983-05-09 工業技術院長 photovoltaic element
JPS60262470A (en) * 1984-06-08 1985-12-25 Kanegafuchi Chem Ind Co Ltd Semiconductor device
JPS61232685A (en) * 1985-04-09 1986-10-16 Agency Of Ind Science & Technol Amorphous silicon solar battery and manufacture thereof
US5055141A (en) * 1990-01-19 1991-10-08 Solarex Corporation Enhancement of short-circuit current by use of wide bandgap n-layers in p-i-n amorphous silicon photovoltaic cells
JPH0722633A (en) * 1991-02-15 1995-01-24 Kanegafuchi Chem Ind Co Ltd High voltage amorphous semiconductor/amorphous silicon hetero junction semiconductor device
DE4408791B4 (en) * 1993-03-16 2006-10-19 Fuji Electric Co., Ltd., Kawasaki Process for producing a silicon oxide semiconductor film
US7747033B2 (en) 2005-04-01 2010-06-29 Kabushiki Kaisha Audio-Technica Acoustic tube and directional microphone
WO2011001842A1 (en) * 2009-07-03 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
US9437758B2 (en) 2011-02-21 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5868046U (en) * 1981-11-02 1983-05-09 工業技術院長 photovoltaic element
JPS629747Y2 (en) * 1981-11-02 1987-03-06
JPS60262470A (en) * 1984-06-08 1985-12-25 Kanegafuchi Chem Ind Co Ltd Semiconductor device
JPS61232685A (en) * 1985-04-09 1986-10-16 Agency Of Ind Science & Technol Amorphous silicon solar battery and manufacture thereof
US5055141A (en) * 1990-01-19 1991-10-08 Solarex Corporation Enhancement of short-circuit current by use of wide bandgap n-layers in p-i-n amorphous silicon photovoltaic cells
JPH0722633A (en) * 1991-02-15 1995-01-24 Kanegafuchi Chem Ind Co Ltd High voltage amorphous semiconductor/amorphous silicon hetero junction semiconductor device
DE4408791B4 (en) * 1993-03-16 2006-10-19 Fuji Electric Co., Ltd., Kawasaki Process for producing a silicon oxide semiconductor film
US7747033B2 (en) 2005-04-01 2010-06-29 Kabushiki Kaisha Audio-Technica Acoustic tube and directional microphone
WO2011001842A1 (en) * 2009-07-03 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
US9496428B2 (en) 2009-07-03 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
US9437758B2 (en) 2011-02-21 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device

Also Published As

Publication number Publication date
JPH0340515B2 (en) 1991-06-19

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