JPS5640234A - Light-electricity converting element - Google Patents

Light-electricity converting element

Info

Publication number
JPS5640234A
JPS5640234A JP11609579A JP11609579A JPS5640234A JP S5640234 A JPS5640234 A JP S5640234A JP 11609579 A JP11609579 A JP 11609579A JP 11609579 A JP11609579 A JP 11609579A JP S5640234 A JPS5640234 A JP S5640234A
Authority
JP
Japan
Prior art keywords
substrate
light
electrodes
solar cell
manufactured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11609579A
Other languages
Japanese (ja)
Inventor
Masataka Koyama
Ikuo Tomita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11609579A priority Critical patent/JPS5640234A/en
Publication of JPS5640234A publication Critical patent/JPS5640234A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides

Abstract

PURPOSE:To load an Si substrate with an LED, a solar cell and a photo IC, etc., by forming on it an epitaxial by combining an N type GaP with a P type GaP appropriately. CONSTITUTION:By providing an Si3N4 mask on a B-added Si substrate and applying to it anisotropic etching, N type Ga 5 and 5' are grown on the bottom of grooves 4 and 4'. LED electrodes 7 and 8 and electrodes 12 and 13 of a solar cell 11 are manufactured. Light is emitted from a P-N joint by applying voltage between the electrodes 7 and 8, and electromotive force generating between the N type GaP 5' and P type Si substrate 9 from the electrodes 12 and 13 by applying light to the solar cell 11. As the LED substrate is made of Si, it is possible for this light-electricity converting element to improve its analyzing capability and to be manufactured at a low cost. And further, by providing a solar cell and a photo IC on the same substrate, necessity of providing a separate power source can be eliminated enabling the element to be manufactured in a smaller size.
JP11609579A 1979-09-12 1979-09-12 Light-electricity converting element Pending JPS5640234A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11609579A JPS5640234A (en) 1979-09-12 1979-09-12 Light-electricity converting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11609579A JPS5640234A (en) 1979-09-12 1979-09-12 Light-electricity converting element

Publications (1)

Publication Number Publication Date
JPS5640234A true JPS5640234A (en) 1981-04-16

Family

ID=14678575

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11609579A Pending JPS5640234A (en) 1979-09-12 1979-09-12 Light-electricity converting element

Country Status (1)

Country Link
JP (1) JPS5640234A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61110478A (en) * 1984-11-02 1986-05-28 ゼロツクス　コーポレーシヨン Manufacture of light emitting diode printing array
CN102569489A (en) * 2012-01-20 2012-07-11 郭磊 Semiconductor direct current transformer
CN103456828A (en) * 2011-11-10 2013-12-18 郭磊 Semiconductor photoelectric power converter
US9391226B2 (en) 2011-11-10 2016-07-12 Lei Guo Semiconductor DC transformer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61110478A (en) * 1984-11-02 1986-05-28 ゼロツクス　コーポレーシヨン Manufacture of light emitting diode printing array
CN103456828A (en) * 2011-11-10 2013-12-18 郭磊 Semiconductor photoelectric power converter
US9391226B2 (en) 2011-11-10 2016-07-12 Lei Guo Semiconductor DC transformer
CN102569489A (en) * 2012-01-20 2012-07-11 郭磊 Semiconductor direct current transformer

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