JPS5598880A - Light transmitting/receiving semiconductor device - Google Patents
Light transmitting/receiving semiconductor deviceInfo
- Publication number
- JPS5598880A JPS5598880A JP580879A JP580879A JPS5598880A JP S5598880 A JPS5598880 A JP S5598880A JP 580879 A JP580879 A JP 580879A JP 580879 A JP580879 A JP 580879A JP S5598880 A JPS5598880 A JP S5598880A
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- substrate
- emitting portion
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To improve the performance of a light transmitting/receiving semiconductor device by forming a light emitting portion and a light receiving portion on the same substrate and transmitting and receiving light independently at time.
CONSTITUTION: An n-type Al0.35Ga0.65As layer 2, an Al0.56Ga0.95As active layer 3, and an Al0.35Ga0.65As layer 4 are sequentially laminated on an n-type GaAs substrate 1, the substrate 1 is then polished, and a wafer of approx. 70μm is formed thereon. A Cr-Au electrode 6 having a circular opening is formed on the layer 4 side, and an Au-Ge-Ni electrode 7 is formed on the substrate 1. This substrate 1 is heat treated in H2 to form ohmic electrodes. Then, a groove 8 of 20μm of width is formed through the circular opening to reach the layer 2. Thus, the pn-junction is isolated into light emitting portion and light receiving portion. The light emitting portion E irradiates light modulated according to an electric input signal to couple it to an optical fiber 9. The light receiving portion D receives the light coming from the fiver 9 to generate a photocurrent, which is produced through a resistor R1 as an output signal. Thus, the light is bilaterally transmitted through the optical fiber without particular light circuit element.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP580879A JPS5598880A (en) | 1979-01-20 | 1979-01-20 | Light transmitting/receiving semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP580879A JPS5598880A (en) | 1979-01-20 | 1979-01-20 | Light transmitting/receiving semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5598880A true JPS5598880A (en) | 1980-07-28 |
JPS6133273B2 JPS6133273B2 (en) | 1986-08-01 |
Family
ID=11621374
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP580879A Granted JPS5598880A (en) | 1979-01-20 | 1979-01-20 | Light transmitting/receiving semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5598880A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5778186A (en) * | 1980-11-04 | 1982-05-15 | Hitachi Ltd | Optical fiber transceiving composite device |
JPS57115882A (en) * | 1981-01-09 | 1982-07-19 | Mitsubishi Electric Corp | Two way light transmitting circuit |
JPS57139976A (en) * | 1981-02-23 | 1982-08-30 | Omron Tateisi Electronics Co | Light emitting/receiving device |
JPS5914353U (en) * | 1982-07-16 | 1984-01-28 | オムロン株式会社 | Light emitting/light receiving device |
US4485391A (en) * | 1980-10-28 | 1984-11-27 | Thomson-Csf | Light emitting and receiving transistor for operation in alternate _sequence in an optical-fiber telecommunications systems |
US4607368A (en) * | 1981-11-30 | 1986-08-19 | Fujitsu Limited | Optical semiconductor device |
JPS6235587A (en) * | 1985-08-08 | 1987-02-16 | Sanyo Electric Co Ltd | Light emitting element |
US4910571A (en) * | 1987-04-21 | 1990-03-20 | Nec Corporation | Optical semiconductor device |
-
1979
- 1979-01-20 JP JP580879A patent/JPS5598880A/en active Granted
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4485391A (en) * | 1980-10-28 | 1984-11-27 | Thomson-Csf | Light emitting and receiving transistor for operation in alternate _sequence in an optical-fiber telecommunications systems |
JPS5778186A (en) * | 1980-11-04 | 1982-05-15 | Hitachi Ltd | Optical fiber transceiving composite device |
JPS57115882A (en) * | 1981-01-09 | 1982-07-19 | Mitsubishi Electric Corp | Two way light transmitting circuit |
JPS57139976A (en) * | 1981-02-23 | 1982-08-30 | Omron Tateisi Electronics Co | Light emitting/receiving device |
US4614958A (en) * | 1981-02-23 | 1986-09-30 | Omron Tateisi Electronics Co. | Light emitting and receiving device |
US4607368A (en) * | 1981-11-30 | 1986-08-19 | Fujitsu Limited | Optical semiconductor device |
JPS5914353U (en) * | 1982-07-16 | 1984-01-28 | オムロン株式会社 | Light emitting/light receiving device |
JPS6235587A (en) * | 1985-08-08 | 1987-02-16 | Sanyo Electric Co Ltd | Light emitting element |
US4910571A (en) * | 1987-04-21 | 1990-03-20 | Nec Corporation | Optical semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6133273B2 (en) | 1986-08-01 |
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