JPS5463687A - Semiconductor light source device - Google Patents
Semiconductor light source deviceInfo
- Publication number
- JPS5463687A JPS5463687A JP12966777A JP12966777A JPS5463687A JP S5463687 A JPS5463687 A JP S5463687A JP 12966777 A JP12966777 A JP 12966777A JP 12966777 A JP12966777 A JP 12966777A JP S5463687 A JPS5463687 A JP S5463687A
- Authority
- JP
- Japan
- Prior art keywords
- divided
- substrate
- plural
- layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To obtain plural optical coupling pathes to optical fiber cables from one semiconductor light source device by integrating compositely plural light emission parts to constitute a light emission semiconductor part and fixing this part onto the electrode which is divided and provided on a heat-radiating substrate.
CONSTITUTION: P-type GaAs layer 3 is grown through active layer 2 on N-type GaAs substrate 1, and metallic wires 4 such as Au and W which becomes a mask are arranged at periodic intervals on this layer 3. Next, proton H+ or oxygen ion O+ is injected to form plural high-resistance regions 5 which are divided and reach substrate 1, and plural divided ohmic electrodes 6 are caused to adhere to the part from region 3', where region 5 is not formed, up to region 5. Meanwhile, N-type Si substrate 7 is used for a radiator part where this electrode is fitted, and Schottky electrode 8 such as Ti and Pt is provided on the surface and has groove 9 formed by etching and is divided beforehand. After that, electrodes 8 and 6 are arranged oppositely to each other and are subjected to thermo compression bonding through In or Sn layer 10 mutually.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12966777A JPS5463687A (en) | 1977-10-31 | 1977-10-31 | Semiconductor light source device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12966777A JPS5463687A (en) | 1977-10-31 | 1977-10-31 | Semiconductor light source device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5463687A true JPS5463687A (en) | 1979-05-22 |
Family
ID=15015161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12966777A Pending JPS5463687A (en) | 1977-10-31 | 1977-10-31 | Semiconductor light source device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5463687A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5775484A (en) * | 1980-10-28 | 1982-05-12 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
JPS5895889A (en) * | 1981-12-02 | 1983-06-07 | Mitsubishi Electric Corp | Semiconductor light emitting element array |
-
1977
- 1977-10-31 JP JP12966777A patent/JPS5463687A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5775484A (en) * | 1980-10-28 | 1982-05-12 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
JPS5895889A (en) * | 1981-12-02 | 1983-06-07 | Mitsubishi Electric Corp | Semiconductor light emitting element array |
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