JPS5463687A - Semiconductor light source device - Google Patents

Semiconductor light source device

Info

Publication number
JPS5463687A
JPS5463687A JP12966777A JP12966777A JPS5463687A JP S5463687 A JPS5463687 A JP S5463687A JP 12966777 A JP12966777 A JP 12966777A JP 12966777 A JP12966777 A JP 12966777A JP S5463687 A JPS5463687 A JP S5463687A
Authority
JP
Japan
Prior art keywords
divided
substrate
plural
layer
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12966777A
Other languages
Japanese (ja)
Inventor
Tokuro Omachi
Yoshitaka Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP12966777A priority Critical patent/JPS5463687A/en
Publication of JPS5463687A publication Critical patent/JPS5463687A/en
Pending legal-status Critical Current

Links

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  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To obtain plural optical coupling pathes to optical fiber cables from one semiconductor light source device by integrating compositely plural light emission parts to constitute a light emission semiconductor part and fixing this part onto the electrode which is divided and provided on a heat-radiating substrate.
CONSTITUTION: P-type GaAs layer 3 is grown through active layer 2 on N-type GaAs substrate 1, and metallic wires 4 such as Au and W which becomes a mask are arranged at periodic intervals on this layer 3. Next, proton H+ or oxygen ion O+ is injected to form plural high-resistance regions 5 which are divided and reach substrate 1, and plural divided ohmic electrodes 6 are caused to adhere to the part from region 3', where region 5 is not formed, up to region 5. Meanwhile, N-type Si substrate 7 is used for a radiator part where this electrode is fitted, and Schottky electrode 8 such as Ti and Pt is provided on the surface and has groove 9 formed by etching and is divided beforehand. After that, electrodes 8 and 6 are arranged oppositely to each other and are subjected to thermo compression bonding through In or Sn layer 10 mutually.
COPYRIGHT: (C)1979,JPO&Japio
JP12966777A 1977-10-31 1977-10-31 Semiconductor light source device Pending JPS5463687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12966777A JPS5463687A (en) 1977-10-31 1977-10-31 Semiconductor light source device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12966777A JPS5463687A (en) 1977-10-31 1977-10-31 Semiconductor light source device

Publications (1)

Publication Number Publication Date
JPS5463687A true JPS5463687A (en) 1979-05-22

Family

ID=15015161

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12966777A Pending JPS5463687A (en) 1977-10-31 1977-10-31 Semiconductor light source device

Country Status (1)

Country Link
JP (1) JPS5463687A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5775484A (en) * 1980-10-28 1982-05-12 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS5895889A (en) * 1981-12-02 1983-06-07 Mitsubishi Electric Corp Semiconductor light emitting element array

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5775484A (en) * 1980-10-28 1982-05-12 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS5895889A (en) * 1981-12-02 1983-06-07 Mitsubishi Electric Corp Semiconductor light emitting element array

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