JPS5775484A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS5775484A JPS5775484A JP55151837A JP15183780A JPS5775484A JP S5775484 A JPS5775484 A JP S5775484A JP 55151837 A JP55151837 A JP 55151837A JP 15183780 A JP15183780 A JP 15183780A JP S5775484 A JPS5775484 A JP S5775484A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- submount
- elements
- solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To obtain a submount element having superior thermal radiation by a method wherein a plurality of electrodes are composed on a semiconductor substrate through an insulating film to easily fix arrayed laser or the like to the substrate. CONSTITUTION:After adhering an insulating film 2 consisting of Al2O3 having a predetermined thickness on an Si substrate 1, furthermore an Au film 4 having a predetermined thickness is evaporated on the film 2 to improve the adhesion of the film 2 and the film 4 by a Ti film 3. Photoresist films 5 are provided on the substrate 1 made by the above process to form a wiring pattern by adopting a normal photolithography technique. And in the case of submount for laser array, the wiring pattern is composed of a parallel pattern of several hundred-mum pitch. Next, the films 4 and 3 are etched by using the resist 5 as a mask to form the substrate 1 as a disc several mu square. And furthermore, solder 6 is adhered on the film 4 to fix a plurality of semiconductor elements such as laser array elements 7 on the Si submount and finally the elements 7 are fixed to the substrate 1 through the solder 6.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55151837A JPS5775484A (en) | 1980-10-28 | 1980-10-28 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55151837A JPS5775484A (en) | 1980-10-28 | 1980-10-28 | Semiconductor laser device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5775484A true JPS5775484A (en) | 1982-05-12 |
Family
ID=15527377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55151837A Pending JPS5775484A (en) | 1980-10-28 | 1980-10-28 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5775484A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS543657U (en) * | 1977-06-10 | 1979-01-11 | ||
JPS5463687A (en) * | 1977-10-31 | 1979-05-22 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light source device |
-
1980
- 1980-10-28 JP JP55151837A patent/JPS5775484A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS543657U (en) * | 1977-06-10 | 1979-01-11 | ||
JPS5463687A (en) * | 1977-10-31 | 1979-05-22 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light source device |
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