JPS5775484A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5775484A
JPS5775484A JP55151837A JP15183780A JPS5775484A JP S5775484 A JPS5775484 A JP S5775484A JP 55151837 A JP55151837 A JP 55151837A JP 15183780 A JP15183780 A JP 15183780A JP S5775484 A JPS5775484 A JP S5775484A
Authority
JP
Japan
Prior art keywords
film
substrate
submount
elements
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55151837A
Other languages
Japanese (ja)
Inventor
Masaru Wada
Kunio Ito
Takashi Sugino
Yuichi Shimizu
Naoko Okabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55151837A priority Critical patent/JPS5775484A/en
Publication of JPS5775484A publication Critical patent/JPS5775484A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02476Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • H01S5/0234Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02355Fixing laser chips on mounts
    • H01S5/0237Fixing laser chips on mounts by soldering

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a submount element having superior thermal radiation by a method wherein a plurality of electrodes are composed on a semiconductor substrate through an insulating film to easily fix arrayed laser or the like to the substrate. CONSTITUTION:After adhering an insulating film 2 consisting of Al2O3 having a predetermined thickness on an Si substrate 1, furthermore an Au film 4 having a predetermined thickness is evaporated on the film 2 to improve the adhesion of the film 2 and the film 4 by a Ti film 3. Photoresist films 5 are provided on the substrate 1 made by the above process to form a wiring pattern by adopting a normal photolithography technique. And in the case of submount for laser array, the wiring pattern is composed of a parallel pattern of several hundred-mum pitch. Next, the films 4 and 3 are etched by using the resist 5 as a mask to form the substrate 1 as a disc several mu square. And furthermore, solder 6 is adhered on the film 4 to fix a plurality of semiconductor elements such as laser array elements 7 on the Si submount and finally the elements 7 are fixed to the substrate 1 through the solder 6.
JP55151837A 1980-10-28 1980-10-28 Semiconductor laser device Pending JPS5775484A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55151837A JPS5775484A (en) 1980-10-28 1980-10-28 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55151837A JPS5775484A (en) 1980-10-28 1980-10-28 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5775484A true JPS5775484A (en) 1982-05-12

Family

ID=15527377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55151837A Pending JPS5775484A (en) 1980-10-28 1980-10-28 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5775484A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS543657U (en) * 1977-06-10 1979-01-11
JPS5463687A (en) * 1977-10-31 1979-05-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light source device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS543657U (en) * 1977-06-10 1979-01-11
JPS5463687A (en) * 1977-10-31 1979-05-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light source device

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