JPS5612764A - Manufacturing method for semiconductor device - Google Patents
Manufacturing method for semiconductor deviceInfo
- Publication number
- JPS5612764A JPS5612764A JP8886879A JP8886879A JPS5612764A JP S5612764 A JPS5612764 A JP S5612764A JP 8886879 A JP8886879 A JP 8886879A JP 8886879 A JP8886879 A JP 8886879A JP S5612764 A JPS5612764 A JP S5612764A
- Authority
- JP
- Japan
- Prior art keywords
- resistance layer
- protective film
- etching method
- semiconductor element
- resin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 abstract 2
- 238000001259 photo etching Methods 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 abstract 2
- 239000011347 resin Substances 0.000 abstract 2
- 229920005989 resin Polymers 0.000 abstract 2
- 239000004642 Polyimide Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 229920001721 polyimide Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To enable formation of a protective film of a semiconductor element and a protective film of a resistance layer independently by forming a resistance layer after all the semiconductor elements, excluding the resistance layer, have been formed. CONSTITUTION:A semiconductor element 2 is formed on a semiconductor substrate 1 besides a resistance layer. Then, a polyimide heat-resisting high molecular resin film 8 is applied on the whole surface. Next, openings 9 and 10 are provided on the resin film 8 using a photo etching method and the joined section with the resistance layer and the connection wiring layers 5 and 7 are exposed. Subsequently, a resistance layer is formed using an evaporation method and a resistance layer pattern 11 is formed employing a photo etching method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8886879A JPS5612764A (en) | 1979-07-12 | 1979-07-12 | Manufacturing method for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8886879A JPS5612764A (en) | 1979-07-12 | 1979-07-12 | Manufacturing method for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5612764A true JPS5612764A (en) | 1981-02-07 |
Family
ID=13954980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8886879A Pending JPS5612764A (en) | 1979-07-12 | 1979-07-12 | Manufacturing method for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5612764A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58210411A (en) * | 1982-06-02 | 1983-12-07 | Sharp Corp | Detector for imperfect combustion |
-
1979
- 1979-07-12 JP JP8886879A patent/JPS5612764A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58210411A (en) * | 1982-06-02 | 1983-12-07 | Sharp Corp | Detector for imperfect combustion |
| JPH033124B2 (en) * | 1982-06-02 | 1991-01-17 | Sharp Kk |
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