JPS5618445A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5618445A JPS5618445A JP9396979A JP9396979A JPS5618445A JP S5618445 A JPS5618445 A JP S5618445A JP 9396979 A JP9396979 A JP 9396979A JP 9396979 A JP9396979 A JP 9396979A JP S5618445 A JPS5618445 A JP S5618445A
- Authority
- JP
- Japan
- Prior art keywords
- glass layer
- resist
- layer
- hole
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain a very small through hole and to have a high accuracy by a method wherein a glass layer is used as an etching resist of a polymide type resin film. CONSTITUTION:The first wiring conductive layer pattern 4 of an Al or the like is formed on the semiconductor substrate 1, on which unhardened polyimide resin 5 is applied and it is hardened by heating. Then, the glass layer 6 (phosphor doped glass or the like) is evaporated using CVD method. The polyimide resin film 5 is completely changed to imide and stabilized by the heat generated at the formation of said glass layer. Then a photo resist pattern 7 is formed, an etching is performed on the glass layer 6 and the polyimide layer successively, and then the through hole 8 is formed. Next, the resist 7 and the glass layer 6 are removed, and the second wiring conductive layer 9 is provided. As a result, an excellent mask matching can be performed because at the time of formation of the resist 7, the first pattern 4 can have a very small through hole, thereby enabling to have a very high accuracy.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9396979A JPS5618445A (en) | 1979-07-24 | 1979-07-24 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9396979A JPS5618445A (en) | 1979-07-24 | 1979-07-24 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5618445A true JPS5618445A (en) | 1981-02-21 |
Family
ID=14097222
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9396979A Pending JPS5618445A (en) | 1979-07-24 | 1979-07-24 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5618445A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4639277A (en) * | 1984-07-02 | 1987-01-27 | Eastman Kodak Company | Semiconductor material on a substrate, said substrate comprising, in order, a layer of organic polymer, a layer of metal or metal alloy and a layer of dielectric material |
-
1979
- 1979-07-24 JP JP9396979A patent/JPS5618445A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4639277A (en) * | 1984-07-02 | 1987-01-27 | Eastman Kodak Company | Semiconductor material on a substrate, said substrate comprising, in order, a layer of organic polymer, a layer of metal or metal alloy and a layer of dielectric material |
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