JPS57102025A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57102025A
JPS57102025A JP17837880A JP17837880A JPS57102025A JP S57102025 A JPS57102025 A JP S57102025A JP 17837880 A JP17837880 A JP 17837880A JP 17837880 A JP17837880 A JP 17837880A JP S57102025 A JPS57102025 A JP S57102025A
Authority
JP
Japan
Prior art keywords
resin
hardened
film
wiring
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17837880A
Other languages
Japanese (ja)
Inventor
Masao Kanazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17837880A priority Critical patent/JPS57102025A/en
Publication of JPS57102025A publication Critical patent/JPS57102025A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve yield of semiconductor manufacture by a method wherein a resin layer is formed on a semiconductor substrate and is hardened by applying a laser beam thereto and the unhardened resin is removed and the hardened resin is used as a mask. CONSTITUTION:An insulating film 11 is formed on a surface of a silicon semiconductor substrate and an Al film is deposited on the film 11. An Al wiring 12 is formed by selectively etching the Al film. The surface of the semiconductor substrate is coated by resin 13 and then is exposed by a laser beam 14. A part of the resin over the Al wiring 12 is hardened by temperature rise due to reflection of the laser beam 14 by Al. The whole substrate 1 is immersed in solvent such as xylene and the unhardened part of the resin is removed, leaving the hardened part near Al wiring 12. Unnecessary parts are removed by ethcing using the hardened resin layer as a mask.
JP17837880A 1980-12-17 1980-12-17 Manufacture of semiconductor device Pending JPS57102025A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17837880A JPS57102025A (en) 1980-12-17 1980-12-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17837880A JPS57102025A (en) 1980-12-17 1980-12-17 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57102025A true JPS57102025A (en) 1982-06-24

Family

ID=16047438

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17837880A Pending JPS57102025A (en) 1980-12-17 1980-12-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57102025A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS611027A (en) * 1984-05-18 1986-01-07 Fujitsu Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS611027A (en) * 1984-05-18 1986-01-07 Fujitsu Ltd Manufacture of semiconductor device
JPH037145B2 (en) * 1984-05-18 1991-01-31 Fujitsu Ltd

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