JPS571227A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS571227A
JPS571227A JP7457580A JP7457580A JPS571227A JP S571227 A JPS571227 A JP S571227A JP 7457580 A JP7457580 A JP 7457580A JP 7457580 A JP7457580 A JP 7457580A JP S571227 A JPS571227 A JP S571227A
Authority
JP
Japan
Prior art keywords
wafer
pattern
mask
groove
dicing line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7457580A
Other languages
Japanese (ja)
Inventor
Masanori Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7457580A priority Critical patent/JPS571227A/en
Publication of JPS571227A publication Critical patent/JPS571227A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To increase the adhesive property as well as to prevent the decrease in resolution of the pattern in LSI and the like by a method wherein a groove is provided on the dicing line on either of the wafer or the mask whereon a pattern will be formed by performing contact extposure. CONSTITUTION:A resist layer is applied on the wafer, the mask for pattern formation is superposed and tightly adhered on the wafer and the resist pattern to be used as a mask for the etching which will be used for the manufacture of the LSI is formed on the wafer by performing exposure and developing processes. A groove 19 is provided in advance on the dicing line of the wafer 19 which will be used for a contact exposure and the contact exposure is performed on the groove 19 by applying a resist. Or, by using an ordinary wafer, a groove 25 is provided at the position on the adhering surface of a mask 24 corresponding to the dicing line on the wafer. Through these procedures, the gas generating at the time of adhesion can be removed efficiently, the adhesive property is improved and the decrease in resolution of the pattern due to defective adhesion can also be prevented.
JP7457580A 1980-06-03 1980-06-03 Manufacture of semiconductor device Pending JPS571227A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7457580A JPS571227A (en) 1980-06-03 1980-06-03 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7457580A JPS571227A (en) 1980-06-03 1980-06-03 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS571227A true JPS571227A (en) 1982-01-06

Family

ID=13551118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7457580A Pending JPS571227A (en) 1980-06-03 1980-06-03 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS571227A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60109226A (en) * 1983-11-18 1985-06-14 Canon Inc Device for planer alignment
JPS6396977A (en) * 1986-10-14 1988-04-27 Fanuc Ltd High-frequency discharge-pumped laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60109226A (en) * 1983-11-18 1985-06-14 Canon Inc Device for planer alignment
JPH0144010B2 (en) * 1983-11-18 1989-09-25 Canon Kk
JPS6396977A (en) * 1986-10-14 1988-04-27 Fanuc Ltd High-frequency discharge-pumped laser

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