JPS571227A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS571227A JPS571227A JP7457580A JP7457580A JPS571227A JP S571227 A JPS571227 A JP S571227A JP 7457580 A JP7457580 A JP 7457580A JP 7457580 A JP7457580 A JP 7457580A JP S571227 A JPS571227 A JP S571227A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- pattern
- mask
- groove
- dicing line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 238000000034 method Methods 0.000 abstract 3
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 230000002950 deficient Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000007261 regionalization Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To increase the adhesive property as well as to prevent the decrease in resolution of the pattern in LSI and the like by a method wherein a groove is provided on the dicing line on either of the wafer or the mask whereon a pattern will be formed by performing contact extposure. CONSTITUTION:A resist layer is applied on the wafer, the mask for pattern formation is superposed and tightly adhered on the wafer and the resist pattern to be used as a mask for the etching which will be used for the manufacture of the LSI is formed on the wafer by performing exposure and developing processes. A groove 19 is provided in advance on the dicing line of the wafer 19 which will be used for a contact exposure and the contact exposure is performed on the groove 19 by applying a resist. Or, by using an ordinary wafer, a groove 25 is provided at the position on the adhering surface of a mask 24 corresponding to the dicing line on the wafer. Through these procedures, the gas generating at the time of adhesion can be removed efficiently, the adhesive property is improved and the decrease in resolution of the pattern due to defective adhesion can also be prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7457580A JPS571227A (en) | 1980-06-03 | 1980-06-03 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7457580A JPS571227A (en) | 1980-06-03 | 1980-06-03 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS571227A true JPS571227A (en) | 1982-01-06 |
Family
ID=13551118
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7457580A Pending JPS571227A (en) | 1980-06-03 | 1980-06-03 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS571227A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60109226A (en) * | 1983-11-18 | 1985-06-14 | Canon Inc | Device for planer alignment |
JPS6396977A (en) * | 1986-10-14 | 1988-04-27 | Fanuc Ltd | High-frequency discharge-pumped laser |
-
1980
- 1980-06-03 JP JP7457580A patent/JPS571227A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60109226A (en) * | 1983-11-18 | 1985-06-14 | Canon Inc | Device for planer alignment |
JPH0144010B2 (en) * | 1983-11-18 | 1989-09-25 | Canon Kk | |
JPS6396977A (en) * | 1986-10-14 | 1988-04-27 | Fanuc Ltd | High-frequency discharge-pumped laser |
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