JPS6449231A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6449231A
JPS6449231A JP20513487A JP20513487A JPS6449231A JP S6449231 A JPS6449231 A JP S6449231A JP 20513487 A JP20513487 A JP 20513487A JP 20513487 A JP20513487 A JP 20513487A JP S6449231 A JPS6449231 A JP S6449231A
Authority
JP
Japan
Prior art keywords
films
photoresist
wafer
plasma
etching method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20513487A
Other languages
Japanese (ja)
Inventor
Shigeki Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20513487A priority Critical patent/JPS6449231A/en
Publication of JPS6449231A publication Critical patent/JPS6449231A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To remove photoresist films without giving damages to the surface of a wafer at all by a method wherein the top surfaces of the photoresist films are removed by a plasma etching method and then the photoresist films and buried films are removed by plasma enclosing etching. CONSTITUTION:A certain process is applied to photoresist films 2 formed on a wafer 1. During that process, modified layers 3 are formed in the surfaces of the photoresist film 2. Further, buried layers 4 made of photoresist are formed on the parts of the wafer which are not covered with the photoresist films 2. The top surfaces of the resist films 2, i.e. the modified layers 3, are removed by the application of a plasma etching method with oxygen. The resist films 2 and the buried layers 4 are removed by the application of a plasma enclosing etching method. With this constitution, the resist films 2 can be removed without giving damages to the surface of the wafer at all.
JP20513487A 1987-08-20 1987-08-20 Manufacture of semiconductor device Pending JPS6449231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20513487A JPS6449231A (en) 1987-08-20 1987-08-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20513487A JPS6449231A (en) 1987-08-20 1987-08-20 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6449231A true JPS6449231A (en) 1989-02-23

Family

ID=16501989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20513487A Pending JPS6449231A (en) 1987-08-20 1987-08-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6449231A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009218574A (en) * 2008-02-15 2009-09-24 Tokyo Electron Ltd Method of forming pattern, and method and device for manufacturing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009218574A (en) * 2008-02-15 2009-09-24 Tokyo Electron Ltd Method of forming pattern, and method and device for manufacturing semiconductor device

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