JPS5680130A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5680130A JPS5680130A JP15686179A JP15686179A JPS5680130A JP S5680130 A JPS5680130 A JP S5680130A JP 15686179 A JP15686179 A JP 15686179A JP 15686179 A JP15686179 A JP 15686179A JP S5680130 A JPS5680130 A JP S5680130A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mask
- wiring
- pattern
- reflection reducing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Abstract
PURPOSE:To facilitate the manufacturing of a minute wiring pattern by forming a refelection reducing layer on an Al layer surface for photoetching in consisting the Al layer provided on a semiconductor substrate surface as an electrode and a wiring for patterning. CONSTITUTION:An opening for electrode formation is formed at an oxide film 32 provided on a semiconductor substrate 31. After evaporating an Al layer on the whole surface, a reflection reducing layer 39 (a plasma nitriding thin film or the like is suitable), and a positive resist are successively formed on the Al layer surface to form a mask 35 by applying exposure and developing. Next, the removal by etching is selectively applied to the reflection reducing layer and the Al layer by using the mask 35. Then, the resist mask 35 and the reflection reducing layer 39 are removed to form an Al pattern 34. In exposing the light, unnecessary exposure by reflected light will not be done by the above procedures. Therefore, the minute pattern manufacturing will be facilitated by preventing the formation of an imperfect region in the resist mask generating wedge-shaped notches on a wiring layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15686179A JPS5680130A (en) | 1979-12-05 | 1979-12-05 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15686179A JPS5680130A (en) | 1979-12-05 | 1979-12-05 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5680130A true JPS5680130A (en) | 1981-07-01 |
Family
ID=15636981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15686179A Pending JPS5680130A (en) | 1979-12-05 | 1979-12-05 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5680130A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5846635A (en) * | 1981-09-14 | 1983-03-18 | Toshiba Corp | Formation of semiconductor element pattern |
JPS5933827A (en) * | 1982-08-19 | 1984-02-23 | Toshiba Corp | Manufacture of semiconductor device |
JPS59175772A (en) * | 1983-03-26 | 1984-10-04 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH02275171A (en) * | 1989-04-17 | 1990-11-09 | Aisin Aw Co Ltd | Lubrication device of one-way clutch of automatic transmission |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS498182A (en) * | 1972-05-10 | 1974-01-24 | ||
JPS4931282A (en) * | 1972-07-21 | 1974-03-20 | ||
JPS5010615A (en) * | 1973-05-28 | 1975-02-03 | ||
JPS5158072A (en) * | 1974-11-18 | 1976-05-21 | Matsushita Electric Ind Co Ltd | HANDOTAISOCHINOSEIZOHOHO |
-
1979
- 1979-12-05 JP JP15686179A patent/JPS5680130A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS498182A (en) * | 1972-05-10 | 1974-01-24 | ||
JPS4931282A (en) * | 1972-07-21 | 1974-03-20 | ||
JPS5010615A (en) * | 1973-05-28 | 1975-02-03 | ||
JPS5158072A (en) * | 1974-11-18 | 1976-05-21 | Matsushita Electric Ind Co Ltd | HANDOTAISOCHINOSEIZOHOHO |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5846635A (en) * | 1981-09-14 | 1983-03-18 | Toshiba Corp | Formation of semiconductor element pattern |
JPS5933827A (en) * | 1982-08-19 | 1984-02-23 | Toshiba Corp | Manufacture of semiconductor device |
JPS59175772A (en) * | 1983-03-26 | 1984-10-04 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH057857B2 (en) * | 1983-03-26 | 1993-01-29 | Fujitsu Ltd | |
JPH02275171A (en) * | 1989-04-17 | 1990-11-09 | Aisin Aw Co Ltd | Lubrication device of one-way clutch of automatic transmission |
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