JPS5317075A - Production of silicon mask for x-ray exposure - Google Patents

Production of silicon mask for x-ray exposure

Info

Publication number
JPS5317075A
JPS5317075A JP9109876A JP9109876A JPS5317075A JP S5317075 A JPS5317075 A JP S5317075A JP 9109876 A JP9109876 A JP 9109876A JP 9109876 A JP9109876 A JP 9109876A JP S5317075 A JPS5317075 A JP S5317075A
Authority
JP
Japan
Prior art keywords
production
ray exposure
silicon mask
thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9109876A
Other languages
Japanese (ja)
Other versions
JPS5337703B2 (en
Inventor
Katsumi Suzuki
Yasuo Iida
Toshiro Ono
Yoshiaki Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9109876A priority Critical patent/JPS5317075A/en
Publication of JPS5317075A publication Critical patent/JPS5317075A/en
Publication of JPS5337703B2 publication Critical patent/JPS5337703B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To form a mask capable of providing patterns of line widths of less than 1 μm by forming an X-ray transmission layer on one surface of a Si single crystal substrate, evaporating a thin Ti film and a thin Pt film of the same thickness thereon, thendpatterning said layers to form an X-ray absorption layer, selectively etching the substrate and supporting the transmission layer and the absorption layer.
COPYRIGHT: (C)1978,JPO&Japio
JP9109876A 1976-07-30 1976-07-30 Production of silicon mask for x-ray exposure Granted JPS5317075A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9109876A JPS5317075A (en) 1976-07-30 1976-07-30 Production of silicon mask for x-ray exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9109876A JPS5317075A (en) 1976-07-30 1976-07-30 Production of silicon mask for x-ray exposure

Publications (2)

Publication Number Publication Date
JPS5317075A true JPS5317075A (en) 1978-02-16
JPS5337703B2 JPS5337703B2 (en) 1978-10-11

Family

ID=14017033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9109876A Granted JPS5317075A (en) 1976-07-30 1976-07-30 Production of silicon mask for x-ray exposure

Country Status (1)

Country Link
JP (1) JPS5317075A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5934632A (en) * 1982-08-23 1984-02-25 Toshiba Corp Manufacture of x-ray mask
JP2015062212A (en) * 2013-09-23 2015-04-02 ナショナル シンクロトロン ラディエイション リサーチ センターＮａｔｉｏｎａｌ Ｓｙｎｃｈｒｏｔｒｏｎ Ｒａｄｉａｔｉｏｎ Ｒｅｓｅａｒｃｈ Ｃｅｎｔｅｒ X-ray mask structure and manufacturing method therefor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5751814Y2 (en) * 1979-07-25 1982-11-11

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5192181A (en) * 1975-02-10 1976-08-12 X senrokopataankeiseihoho oyobi masukukiban

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5192181A (en) * 1975-02-10 1976-08-12 X senrokopataankeiseihoho oyobi masukukiban

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5934632A (en) * 1982-08-23 1984-02-25 Toshiba Corp Manufacture of x-ray mask
JP2015062212A (en) * 2013-09-23 2015-04-02 ナショナル シンクロトロン ラディエイション リサーチ センターＮａｔｉｏｎａｌ Ｓｙｎｃｈｒｏｔｒｏｎ Ｒａｄｉａｔｉｏｎ Ｒｅｓｅａｒｃｈ Ｃｅｎｔｅｒ X-ray mask structure and manufacturing method therefor
US9152036B2 (en) 2013-09-23 2015-10-06 National Synchrotron Radiation Research Center X-ray mask structure and method for preparing the same

Also Published As

Publication number Publication date
JPS5337703B2 (en) 1978-10-11

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