JPS5384465A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5384465A JPS5384465A JP15948376A JP15948376A JPS5384465A JP S5384465 A JPS5384465 A JP S5384465A JP 15948376 A JP15948376 A JP 15948376A JP 15948376 A JP15948376 A JP 15948376A JP S5384465 A JPS5384465 A JP S5384465A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- metal layer
- lamination
- ensure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To ensure a precision patterning for the electrode metal layer, by forming a high close adhesion mask through lamination of the resist via the Cr or Ti thin film onto the Ti-Pt-gold metal layer on the element.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15948376A JPS581544B2 (en) | 1976-12-29 | 1976-12-29 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15948376A JPS581544B2 (en) | 1976-12-29 | 1976-12-29 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5384465A true JPS5384465A (en) | 1978-07-25 |
JPS581544B2 JPS581544B2 (en) | 1983-01-11 |
Family
ID=15694745
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15948376A Expired JPS581544B2 (en) | 1976-12-29 | 1976-12-29 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS581544B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012175089A (en) * | 2011-02-24 | 2012-09-10 | Fujitsu Ltd | Semiconductor device and method of manufacturing semiconductor device |
JP2016103646A (en) * | 2015-12-14 | 2016-06-02 | 富士通株式会社 | Semiconductor device and method of manufacturing semiconductor device |
-
1976
- 1976-12-29 JP JP15948376A patent/JPS581544B2/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012175089A (en) * | 2011-02-24 | 2012-09-10 | Fujitsu Ltd | Semiconductor device and method of manufacturing semiconductor device |
US9379229B2 (en) | 2011-02-24 | 2016-06-28 | Fujitsu Limited | Semiconductor apparatus including protective film on gate electrode and method for manufacturing the semiconductor apparatus |
US9685547B2 (en) | 2011-02-24 | 2017-06-20 | Fujitsu Limited | Semiconductor apparatus including barrier film provided between electrode and protection film |
JP2016103646A (en) * | 2015-12-14 | 2016-06-02 | 富士通株式会社 | Semiconductor device and method of manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS581544B2 (en) | 1983-01-11 |
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