JPS5317076A - Silicon mask for x-ray exposure and its production - Google Patents

Silicon mask for x-ray exposure and its production

Info

Publication number
JPS5317076A
JPS5317076A JP9109976A JP9109976A JPS5317076A JP S5317076 A JPS5317076 A JP S5317076A JP 9109976 A JP9109976 A JP 9109976A JP 9109976 A JP9109976 A JP 9109976A JP S5317076 A JPS5317076 A JP S5317076A
Authority
JP
Japan
Prior art keywords
production
layer
film
ray exposure
silicon mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9109976A
Other languages
Japanese (ja)
Other versions
JPS5337704B2 (en
Inventor
Katsumi Suzuki
Junji Matsui
Toshiki Kadota
Yoshiaki Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9109976A priority Critical patent/JPS5317076A/en
Publication of JPS5317076A publication Critical patent/JPS5317076A/en
Publication of JPS5337704B2 publication Critical patent/JPS5337704B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To obtain a mask having line widths of less than 1 μm by making an Xray transmission layer with the 3 layered films laminated in the order of SiO2 film, Si3N4 film and SiO2 film, making an X-ray absorption layer through provision of a metal layer of arbitrary patterns on said layer and further providing reinforcing and supporting beams composed of Si on the other surface of the transmission layer.
COPYRIGHT: (C)1978,JPO&Japio
JP9109976A 1976-07-30 1976-07-30 Silicon mask for x-ray exposure and its production Granted JPS5317076A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9109976A JPS5317076A (en) 1976-07-30 1976-07-30 Silicon mask for x-ray exposure and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9109976A JPS5317076A (en) 1976-07-30 1976-07-30 Silicon mask for x-ray exposure and its production

Publications (2)

Publication Number Publication Date
JPS5317076A true JPS5317076A (en) 1978-02-16
JPS5337704B2 JPS5337704B2 (en) 1978-10-11

Family

ID=14017062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9109976A Granted JPS5317076A (en) 1976-07-30 1976-07-30 Silicon mask for x-ray exposure and its production

Country Status (1)

Country Link
JP (1) JPS5317076A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451544A (en) * 1981-06-24 1984-05-29 Tokyo Shibaura Denki Kabushiki Kaisha Mask structure for X-ray lithography and method for manufacturing the same
JPS6220310A (en) * 1985-07-19 1987-01-28 Nippon Telegr & Teleph Corp <Ntt> X-ray mask
JPS63200530A (en) * 1987-02-17 1988-08-18 Matsushita Electronics Corp Manufacture of x-ray mask

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5192181A (en) * 1975-02-10 1976-08-12 X senrokopataankeiseihoho oyobi masukukiban

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5192181A (en) * 1975-02-10 1976-08-12 X senrokopataankeiseihoho oyobi masukukiban

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451544A (en) * 1981-06-24 1984-05-29 Tokyo Shibaura Denki Kabushiki Kaisha Mask structure for X-ray lithography and method for manufacturing the same
JPS6220310A (en) * 1985-07-19 1987-01-28 Nippon Telegr & Teleph Corp <Ntt> X-ray mask
JPS63200530A (en) * 1987-02-17 1988-08-18 Matsushita Electronics Corp Manufacture of x-ray mask

Also Published As

Publication number Publication date
JPS5337704B2 (en) 1978-10-11

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