JPS5799742A - Mask for x-ray exposure - Google Patents
Mask for x-ray exposureInfo
- Publication number
- JPS5799742A JPS5799742A JP17564680A JP17564680A JPS5799742A JP S5799742 A JPS5799742 A JP S5799742A JP 17564680 A JP17564680 A JP 17564680A JP 17564680 A JP17564680 A JP 17564680A JP S5799742 A JPS5799742 A JP S5799742A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- layer
- mask
- 1mum
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000006096 absorbing agent Substances 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000000470 constituent Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Abstract
PURPOSE:To enhance a mechanical strength of a mask for X-ray exposure and also to reduce an X-ray absorption by a method wherein a film supporting an X-ray absorber has multiple layers, and at least one of them is made of the same material as a characteristic X-ray creating material for exposure use. CONSTITUTION:An Al layer 2'-1 (0.1-1mum), an SiO2 intermediate layer 2' (0.5- 3mum) and a No.2 Al layer 2'-2 (0.1-1mum) are in turn coated on a lapped face of a silicon wafer 3' to form a multilayer film wherein a tensile stress is small as a whole. Next, an absorber pattern 2 is laid, and an Al layer is coated on the back of the wafer and etched so that an Al layer 4 remains only at the part constituting a frame. Subsequently, the silicon wafer is etched by an SF6 gas plasma with the Al layer 4 masked to form the silicon frame 3. With this structure, by making a pattern supporter a multilayer structure, the mechanical strength of the mask can be increased. Further, the same material as the X-ray source (characteristic X-ray of Al) is included into the constituent material, thereby absorption at X-ray transmission parts can be reduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17564680A JPS5799742A (en) | 1980-12-12 | 1980-12-12 | Mask for x-ray exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17564680A JPS5799742A (en) | 1980-12-12 | 1980-12-12 | Mask for x-ray exposure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5799742A true JPS5799742A (en) | 1982-06-21 |
Family
ID=15999723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17564680A Pending JPS5799742A (en) | 1980-12-12 | 1980-12-12 | Mask for x-ray exposure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5799742A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0323263A2 (en) * | 1987-12-29 | 1989-07-05 | Canon Kabushiki Kaisha | X-ray mask support member, X-ray mask, and X-ray exposure process using the X-ray mask |
| JPH02309A (en) * | 1987-12-29 | 1990-01-05 | Canon Inc | Mask for x-ray and light exposing method using it |
| US10522181B2 (en) | 2016-04-08 | 2019-12-31 | Sony Corporation | High density optical recording medium having multiple recording layers |
-
1980
- 1980-12-12 JP JP17564680A patent/JPS5799742A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0323263A2 (en) * | 1987-12-29 | 1989-07-05 | Canon Kabushiki Kaisha | X-ray mask support member, X-ray mask, and X-ray exposure process using the X-ray mask |
| JPH02309A (en) * | 1987-12-29 | 1990-01-05 | Canon Inc | Mask for x-ray and light exposing method using it |
| US5012500A (en) * | 1987-12-29 | 1991-04-30 | Canon Kabushiki Kaisha | X-ray mask support member, X-ray mask, and X-ray exposure process using the X-ray mask |
| US10522181B2 (en) | 2016-04-08 | 2019-12-31 | Sony Corporation | High density optical recording medium having multiple recording layers |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS53135348A (en) | Etching method for multilayer film | |
| JPS57172735A (en) | Multilayer photoresist processing | |
| JPS5350680A (en) | Transfer mask for x-ray exposure and its production | |
| JPS5338278A (en) | Semiconductor device | |
| JPS5637635A (en) | Manufacture of semiconductor device | |
| JPS5799742A (en) | Mask for x-ray exposure | |
| JPS5321576A (en) | Mask for x-ray exposure | |
| JPS5317076A (en) | Silicon mask for x-ray exposure and its production | |
| JPS6437014A (en) | Mask for x-ray lithography | |
| JPS5785237A (en) | X-ray mask | |
| JPS5795053A (en) | X-ray window | |
| JPS5652751A (en) | Photomask correcting method | |
| JPS5339060A (en) | Lot number marking method to wafers | |
| JPS5429975A (en) | Photo mask | |
| JPS5267970A (en) | Manufacture of semiconductor element | |
| JPS5317075A (en) | Production of silicon mask for x-ray exposure | |
| JPS5489482A (en) | X-ray lithography mask and production of the same | |
| JPS5397374A (en) | Mask producing method | |
| JPS5656630A (en) | Manufacture of semiconductor element | |
| JPS5385169A (en) | Soft x-ray transfer mask | |
| JPS56169322A (en) | Selective diffusion of boron into silicon | |
| JPS5646536A (en) | Formation of microminiature electrode | |
| JPS5453965A (en) | Mask for soft x-ray copying | |
| JPS568821A (en) | Formation of photoresist layer | |
| JPS5313879A (en) | Silicon mask for x-ray exposure and its production |