JPS5656630A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS5656630A
JPS5656630A JP13261379A JP13261379A JPS5656630A JP S5656630 A JPS5656630 A JP S5656630A JP 13261379 A JP13261379 A JP 13261379A JP 13261379 A JP13261379 A JP 13261379A JP S5656630 A JPS5656630 A JP S5656630A
Authority
JP
Japan
Prior art keywords
photoresist
pattern
mask pattern
3mum
fine pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13261379A
Other languages
Japanese (ja)
Inventor
Yoshio Ken
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13261379A priority Critical patent/JPS5656630A/en
Publication of JPS5656630A publication Critical patent/JPS5656630A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To obtain a fine pattern by a method wherein a photoresist is placed upon the first pattern of the photoresist and then the second pattern is formed partly intersecting therewith. CONSTITUTION:From carrying out exposure and development according to a photoresist 3 are ever before, a mask pattern in the limit of 3-5mum is obtainable through resolving power of the photoresist and diffraction of the light. Further the photoresist is laminated, and a mask pattern 5 is formed, which is slightly shifted to intersect partly with the lower layer of mask pattern 3 at 1-3mum. According to this method, an oxidized film 2 can be exposed with a fine pattern coming in 1-3mum, and the fine pattern can be formed by means of a conventional resist equipment.
JP13261379A 1979-10-15 1979-10-15 Manufacture of semiconductor element Pending JPS5656630A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13261379A JPS5656630A (en) 1979-10-15 1979-10-15 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13261379A JPS5656630A (en) 1979-10-15 1979-10-15 Manufacture of semiconductor element

Publications (1)

Publication Number Publication Date
JPS5656630A true JPS5656630A (en) 1981-05-18

Family

ID=15085415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13261379A Pending JPS5656630A (en) 1979-10-15 1979-10-15 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5656630A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009237270A (en) * 2008-03-27 2009-10-15 Mitsubishi Electric Corp Pattern forming method, wiring structure, and electronic equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009237270A (en) * 2008-03-27 2009-10-15 Mitsubishi Electric Corp Pattern forming method, wiring structure, and electronic equipment

Similar Documents

Publication Publication Date Title
JPS5595324A (en) Manufacturing method of semiconductor device
JPS5255869A (en) Production of semiconductor device
JPS5656630A (en) Manufacture of semiconductor element
JPS57106128A (en) Forming method for pattern
JPS5676531A (en) Manufacture of semiconductor device
JPS5623746A (en) Manufacture of semiconductor device
JPS5339060A (en) Lot number marking method to wafers
JPS5277671A (en) Method and equipment of masking
JPS5596952A (en) Production of photomask
JPS56137632A (en) Pattern forming
JPS5389673A (en) Fine pattern forming method of semiconductor device
JPS5618420A (en) Manufacture of semiconductor device
JPS5610930A (en) Manufacture of semiconductor device
JPS5541728A (en) Pattern formation by thick film paste
JPS57112753A (en) Exposure method
JPS5741637A (en) Microstep tablet
JPS5735321A (en) Manufacture of semiconductor device
JPS5646536A (en) Formation of microminiature electrode
JPS56160040A (en) Printing device
JPS5317076A (en) Silicon mask for x-ray exposure and its production
JPS5244570A (en) Photoetching method
JPS55124230A (en) Forming method of pattern
JPS57153435A (en) Manufacture of semiconductor device
JPS5382268A (en) Production of mask
JPS53116784A (en) Pattern transfer method to photo resist film