JPS55124230A - Forming method of pattern - Google Patents

Forming method of pattern

Info

Publication number
JPS55124230A
JPS55124230A JP3191779A JP3191779A JPS55124230A JP S55124230 A JPS55124230 A JP S55124230A JP 3191779 A JP3191779 A JP 3191779A JP 3191779 A JP3191779 A JP 3191779A JP S55124230 A JPS55124230 A JP S55124230A
Authority
JP
Japan
Prior art keywords
mask pattern
layer
mask
pattern
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3191779A
Other languages
Japanese (ja)
Inventor
Toshio Kobayashi
Eisuke Arai
Yutaka Sakakibara
Masatoshi Oda
Kazuo Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3191779A priority Critical patent/JPS55124230A/en
Publication of JPS55124230A publication Critical patent/JPS55124230A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form a necessary miniaturized pattern precisely on a semiconductor substrate by a method wherein the first mask pattern is formed by exposing treatment with radiation, and using it as a mask, the secondary mask pattern is formed by dry etching treatment. CONSTITUTION:The first layer 33 which can easily be subjected to dry etching, and the secondary layer 34 which has the radiosensitivity, are laminated one after another on a conducting layer 32 formed on a semiconduator substrate 34. The first mask pattern 36 is formed by the selective exposing treatment and in succession by the developing treatment against the secondary layer. Using the mask pattern 36 as a mask, the dry etching treatment is performed against the first layer 33 to form the mask pattern 37. Then using the mask pattern 36 and 37 as the mask, the etching treatment against the conducting layer 32 is performed to form the wiring layer 38, and the mask pattern 36, 37 are removed to form the aimed wiring layer 38.
JP3191779A 1979-03-19 1979-03-19 Forming method of pattern Pending JPS55124230A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3191779A JPS55124230A (en) 1979-03-19 1979-03-19 Forming method of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3191779A JPS55124230A (en) 1979-03-19 1979-03-19 Forming method of pattern

Publications (1)

Publication Number Publication Date
JPS55124230A true JPS55124230A (en) 1980-09-25

Family

ID=12344320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3191779A Pending JPS55124230A (en) 1979-03-19 1979-03-19 Forming method of pattern

Country Status (1)

Country Link
JP (1) JPS55124230A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0200477A2 (en) * 1985-04-26 1986-11-05 Hitachi, Ltd. Process for pattern formation
US4761210A (en) * 1985-09-30 1988-08-02 Siemens Aktiengesellschaft Method for generating structures in micro-mechanics

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5018456A (en) * 1973-04-26 1975-02-26

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5018456A (en) * 1973-04-26 1975-02-26

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0200477A2 (en) * 1985-04-26 1986-11-05 Hitachi, Ltd. Process for pattern formation
EP0200477A3 (en) * 1985-04-26 1988-12-28 Hitachi, Ltd. Process for pattern formation
US4761210A (en) * 1985-09-30 1988-08-02 Siemens Aktiengesellschaft Method for generating structures in micro-mechanics

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