JPS5769736A - Forming method for through hole - Google Patents

Forming method for through hole

Info

Publication number
JPS5769736A
JPS5769736A JP14433580A JP14433580A JPS5769736A JP S5769736 A JPS5769736 A JP S5769736A JP 14433580 A JP14433580 A JP 14433580A JP 14433580 A JP14433580 A JP 14433580A JP S5769736 A JPS5769736 A JP S5769736A
Authority
JP
Japan
Prior art keywords
hole
recess
exposure mask
holes
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14433580A
Other languages
Japanese (ja)
Inventor
Shisei Yoneda
Riichi Konno
Hideyuki Tomidokoro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP14433580A priority Critical patent/JPS5769736A/en
Publication of JPS5769736A publication Critical patent/JPS5769736A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To facilitate the mask matching of masks to be treated required to be positioned to the first and second holes by forming recesses corresponding to the first and second holes with the first exposure mask and forming the second hole in the recess with the second exposure mask. CONSTITUTION:An emitter contacting hole 5 and a base contacting hole are formed at the insulating film 4 on an emitter region 3 and at the insulating film on a base region 2 in an N-type Si epitaxial layer 1 with the first exposure mask 7 at the recess 6 to the midway of a shallow film corresponding in size thereto. Then, a hole 11 reaching the base region 2 is formed under the recess 6, the second exposure mask 15 is formed at the recess 12 having large area at the periphery of the hole and two through holes 5, 11 are formed. In this manner, the mask matching at the time of patterning the metallic film to be coated next can be readily performed.
JP14433580A 1980-10-17 1980-10-17 Forming method for through hole Pending JPS5769736A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14433580A JPS5769736A (en) 1980-10-17 1980-10-17 Forming method for through hole

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14433580A JPS5769736A (en) 1980-10-17 1980-10-17 Forming method for through hole

Publications (1)

Publication Number Publication Date
JPS5769736A true JPS5769736A (en) 1982-04-28

Family

ID=15359711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14433580A Pending JPS5769736A (en) 1980-10-17 1980-10-17 Forming method for through hole

Country Status (1)

Country Link
JP (1) JPS5769736A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257571A (en) * 1984-06-04 1985-12-19 Rohm Co Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257571A (en) * 1984-06-04 1985-12-19 Rohm Co Ltd Manufacture of semiconductor device

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