JPS57122570A - Forming method for impurity region in semiconductor - Google Patents

Forming method for impurity region in semiconductor

Info

Publication number
JPS57122570A
JPS57122570A JP834581A JP834581A JPS57122570A JP S57122570 A JPS57122570 A JP S57122570A JP 834581 A JP834581 A JP 834581A JP 834581 A JP834581 A JP 834581A JP S57122570 A JPS57122570 A JP S57122570A
Authority
JP
Japan
Prior art keywords
layer
hole
impurity
base
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP834581A
Other languages
Japanese (ja)
Inventor
Masamichi Manabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Corp
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Corp, Pioneer Electronic Corp filed Critical Pioneer Corp
Priority to JP834581A priority Critical patent/JPS57122570A/en
Publication of JPS57122570A publication Critical patent/JPS57122570A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To simultaneously obtain impurity regions having desired diffusion depths by selecting the hole of a diffusion mask in an expansion corresponding to an impurity forming region and the total area to a value smaller than the are a of the impurity forming region. CONSTITUTION:An Si oxidized film 2 is formed on a semiconductor layer 1, and diffusion holes 3, 4 are selectively opened. The hole 3 is formed to a value approximately equal to the area of the exposed surface on the layer 1 of a base region to be formed, and the hole 4 is formed to a value approximately equal to the exposed area on the layer 1 of the base region to be formed. A rectangular oxidized film 2a having narrow width is adjacently retained at the prescribed interval therein. Accordingly, the total area of the hole 4 becomes smaller than the exposed area on the layer 1 of the base forming region. With this film 2 as a mask an impurity is introduced into the surface of the layer, thereby obtaining the base regions 5, 6. In this manner, the base region having the desired diffusion depth can be simultaneously obtained without increasing the number of masks and steps.
JP834581A 1981-01-22 1981-01-22 Forming method for impurity region in semiconductor Pending JPS57122570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP834581A JPS57122570A (en) 1981-01-22 1981-01-22 Forming method for impurity region in semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP834581A JPS57122570A (en) 1981-01-22 1981-01-22 Forming method for impurity region in semiconductor

Publications (1)

Publication Number Publication Date
JPS57122570A true JPS57122570A (en) 1982-07-30

Family

ID=11690622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP834581A Pending JPS57122570A (en) 1981-01-22 1981-01-22 Forming method for impurity region in semiconductor

Country Status (1)

Country Link
JP (1) JPS57122570A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59194471A (en) * 1983-04-19 1984-11-05 Nec Corp Manufacture of semiconductor device
JPS63269514A (en) * 1987-04-27 1988-11-07 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59194471A (en) * 1983-04-19 1984-11-05 Nec Corp Manufacture of semiconductor device
JPS63269514A (en) * 1987-04-27 1988-11-07 Mitsubishi Electric Corp Manufacture of semiconductor device

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