JPS5759321A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5759321A JPS5759321A JP13454680A JP13454680A JPS5759321A JP S5759321 A JPS5759321 A JP S5759321A JP 13454680 A JP13454680 A JP 13454680A JP 13454680 A JP13454680 A JP 13454680A JP S5759321 A JPS5759321 A JP S5759321A
- Authority
- JP
- Japan
- Prior art keywords
- resist layer
- semiconductor device
- opening
- cover
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Abstract
PURPOSE:To enhance precision of ion implantation of a semiconductor device by a method wherein after the second resist layer to cover an opening other than the desired opening is formed on the first resist layer used for patterning of an insulating film on a semiconductor substrate, ion implantation is performed. CONSTITUTION:The openings are provided selectively in the insulating film 2 provided on the Si substrate 1 being provided with a base region 5 utilizing the first resist layer 4, and after the second resist layer 4' to cover the undesired opening is formed on the first resist layer 4, impurity ions of P, etc., are implanted to form an emitter region 3. Accordingly when the oxide film is formed shallowly for fine formation, piercing through of ion through the oxide film can be prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13454680A JPS5759321A (en) | 1980-09-27 | 1980-09-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13454680A JPS5759321A (en) | 1980-09-27 | 1980-09-27 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5759321A true JPS5759321A (en) | 1982-04-09 |
Family
ID=15130839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13454680A Pending JPS5759321A (en) | 1980-09-27 | 1980-09-27 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5759321A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6477619A (en) * | 1987-09-16 | 1989-03-23 | Nikkiso Co Ltd | Production of acrylic yarn |
-
1980
- 1980-09-27 JP JP13454680A patent/JPS5759321A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6477619A (en) * | 1987-09-16 | 1989-03-23 | Nikkiso Co Ltd | Production of acrylic yarn |
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