JPS5759321A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5759321A
JPS5759321A JP13454680A JP13454680A JPS5759321A JP S5759321 A JPS5759321 A JP S5759321A JP 13454680 A JP13454680 A JP 13454680A JP 13454680 A JP13454680 A JP 13454680A JP S5759321 A JPS5759321 A JP S5759321A
Authority
JP
Japan
Prior art keywords
resist layer
semiconductor device
opening
cover
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13454680A
Other languages
Japanese (ja)
Inventor
Osamu Hataishi
Yoshinobu Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13454680A priority Critical patent/JPS5759321A/en
Publication of JPS5759321A publication Critical patent/JPS5759321A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation

Abstract

PURPOSE:To enhance precision of ion implantation of a semiconductor device by a method wherein after the second resist layer to cover an opening other than the desired opening is formed on the first resist layer used for patterning of an insulating film on a semiconductor substrate, ion implantation is performed. CONSTITUTION:The openings are provided selectively in the insulating film 2 provided on the Si substrate 1 being provided with a base region 5 utilizing the first resist layer 4, and after the second resist layer 4' to cover the undesired opening is formed on the first resist layer 4, impurity ions of P, etc., are implanted to form an emitter region 3. Accordingly when the oxide film is formed shallowly for fine formation, piercing through of ion through the oxide film can be prevented.
JP13454680A 1980-09-27 1980-09-27 Manufacture of semiconductor device Pending JPS5759321A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13454680A JPS5759321A (en) 1980-09-27 1980-09-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13454680A JPS5759321A (en) 1980-09-27 1980-09-27 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5759321A true JPS5759321A (en) 1982-04-09

Family

ID=15130839

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13454680A Pending JPS5759321A (en) 1980-09-27 1980-09-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5759321A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6477619A (en) * 1987-09-16 1989-03-23 Nikkiso Co Ltd Production of acrylic yarn

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6477619A (en) * 1987-09-16 1989-03-23 Nikkiso Co Ltd Production of acrylic yarn

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