JPS55130130A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55130130A
JPS55130130A JP3776479A JP3776479A JPS55130130A JP S55130130 A JPS55130130 A JP S55130130A JP 3776479 A JP3776479 A JP 3776479A JP 3776479 A JP3776479 A JP 3776479A JP S55130130 A JPS55130130 A JP S55130130A
Authority
JP
Japan
Prior art keywords
dimension
oxide film
etching
etching pattern
pattern dimension
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3776479A
Other languages
Japanese (ja)
Inventor
Toshio Kawamata
Hiroshi Hiroki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Origin Electric Co Ltd
Original Assignee
Origin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Origin Electric Co Ltd filed Critical Origin Electric Co Ltd
Priority to JP3776479A priority Critical patent/JPS55130130A/en
Publication of JPS55130130A publication Critical patent/JPS55130130A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To improve reliability and yield by a method wherein in the photoresist process the second etching pattern is provided to be larger than the first one, and in the electrode forming process the reverse relation is accepted. CONSTITUTION:By the first chemical etching process performed on an oxide film 2 on the surface of a semiconductor substrate 1, the part of which the dimension is the etching pattern dimension W1 is removed. Next, by the second chemical etching process, the part of which dimension is larger etching pattern dimension W2 than W1 is removed. The second process removes resist films and the residual the oxide film 2a. Next, the first chamical ethcing process for building a electrode etc. is performed to perforate the oxide film 2 so as to form the opening of which the dimension is the etching pattern dimension L1. Next, after the oxide film 2 is formed, the opening of which the dimension is the smaller etching pattern dimension L2 than L1 is formed by the second chemical etching process. By these processes, harmful effects due to side etching are eliminated.
JP3776479A 1979-03-30 1979-03-30 Manufacture of semiconductor device Pending JPS55130130A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3776479A JPS55130130A (en) 1979-03-30 1979-03-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3776479A JPS55130130A (en) 1979-03-30 1979-03-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55130130A true JPS55130130A (en) 1980-10-08

Family

ID=12506530

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3776479A Pending JPS55130130A (en) 1979-03-30 1979-03-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55130130A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56164530A (en) * 1980-05-22 1981-12-17 Sanyo Electric Co Ltd Formation of contacting hole of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56164530A (en) * 1980-05-22 1981-12-17 Sanyo Electric Co Ltd Formation of contacting hole of semiconductor device

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