JPS5453965A - Mask for soft x-ray copying - Google Patents

Mask for soft x-ray copying

Info

Publication number
JPS5453965A
JPS5453965A JP12011377A JP12011377A JPS5453965A JP S5453965 A JPS5453965 A JP S5453965A JP 12011377 A JP12011377 A JP 12011377A JP 12011377 A JP12011377 A JP 12011377A JP S5453965 A JPS5453965 A JP S5453965A
Authority
JP
Japan
Prior art keywords
mask
substrate
thick
copying
soft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12011377A
Other languages
Japanese (ja)
Inventor
Toshiro Ono
Toshiki Kadota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP12011377A priority Critical patent/JPS5453965A/en
Publication of JPS5453965A publication Critical patent/JPS5453965A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To manufacture the mask for fine pattern copying, by increasing the mechanical strength and also the flatness and transparency of soft X-ray, through the use of the Si3N4 film in which the atomic constituent of Si is more than 0.5 and the film thickness is more than 0.2 μm for the mask substrate.
CONSTITUTION: On the Si substrate 8 2" diameter and 280 μm thick, the Si3N4 mask substrate 6 0.5 μm thick is made vapor phase growing with the condition of NH3/SiH4 ratio 5, forming the gold pattern 3 4000Å thick. At the rear side, the Si3N4 mask 4 is made in advance and the frame 1 is made with selctive photo etching. This substrate 6 has the strength of hydrostatic pressure of 0.3 Kg/cm2 to the window of 4mm square. Accordingly, the film thickness can be reduced and the transparent rate is increased, no distortion is caused because of the increased strength, and copying of fine pattern is made possible
COPYRIGHT: (C)1979,JPO&Japio
JP12011377A 1977-10-07 1977-10-07 Mask for soft x-ray copying Pending JPS5453965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12011377A JPS5453965A (en) 1977-10-07 1977-10-07 Mask for soft x-ray copying

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12011377A JPS5453965A (en) 1977-10-07 1977-10-07 Mask for soft x-ray copying

Publications (1)

Publication Number Publication Date
JPS5453965A true JPS5453965A (en) 1979-04-27

Family

ID=14778254

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12011377A Pending JPS5453965A (en) 1977-10-07 1977-10-07 Mask for soft x-ray copying

Country Status (1)

Country Link
JP (1) JPS5453965A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5177773A (en) * 1990-03-26 1993-01-05 Hitachi, Ltd. X-ray mask and method for producing same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5177773A (en) * 1990-03-26 1993-01-05 Hitachi, Ltd. X-ray mask and method for producing same

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