JPS6437014A - Mask for x-ray lithography - Google Patents
Mask for x-ray lithographyInfo
- Publication number
- JPS6437014A JPS6437014A JP19314287A JP19314287A JPS6437014A JP S6437014 A JPS6437014 A JP S6437014A JP 19314287 A JP19314287 A JP 19314287A JP 19314287 A JP19314287 A JP 19314287A JP S6437014 A JPS6437014 A JP S6437014A
- Authority
- JP
- Japan
- Prior art keywords
- heavy metal
- giving
- ray
- stress
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To reduce the strain for improving the precision by using heavy metal films of heavy metal absorber giving low stress as an X-ray absorber. CONSTITUTION:A patterned X-ray absorber 5 mainly composed of a heavy metal obstructing the transmission of X-ray formed on an X-ray transmissive film 3 on a holding body 1 is structured by multiple alternately laminated layers comprising the first heavy metal containing layers 51 giving the tension stress and the second heavy metal containing layers 52 giving the compression stress while the first heavy metal containing layer on the X-ray transmissive film 3 side is composed of the first metal layers 51 giving the tension stress. Through these procedures, both stresses are offset to each other so that the heavy metal film 5 giving low stress may be formed to improve the precision of pattern positions.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19314287A JPS6437014A (en) | 1987-07-31 | 1987-07-31 | Mask for x-ray lithography |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19314287A JPS6437014A (en) | 1987-07-31 | 1987-07-31 | Mask for x-ray lithography |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6437014A true JPS6437014A (en) | 1989-02-07 |
Family
ID=16302982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19314287A Pending JPS6437014A (en) | 1987-07-31 | 1987-07-31 | Mask for x-ray lithography |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6437014A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03103644U (en) * | 1990-02-09 | 1991-10-28 | ||
EP0707236A2 (en) * | 1994-10-11 | 1996-04-17 | AT&T Corp. | Masks with low stress multilayer films and a process for controlling the stress of multilayer films |
WO1999042901A1 (en) * | 1998-02-20 | 1999-08-26 | The Regents Of The University Of California | Method to adjust multilayer film stress induced deformation of optics |
JP2019036580A (en) * | 2017-08-10 | 2019-03-07 | 株式会社ニューフレアテクノロジー | Multi-charged particle beam lithography device |
-
1987
- 1987-07-31 JP JP19314287A patent/JPS6437014A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03103644U (en) * | 1990-02-09 | 1991-10-28 | ||
EP0707236A2 (en) * | 1994-10-11 | 1996-04-17 | AT&T Corp. | Masks with low stress multilayer films and a process for controlling the stress of multilayer films |
JPH08190190A (en) * | 1994-10-11 | 1996-07-23 | At & T Corp | Mask having low-stress multilayered film and process for controlling stress of multilayered film |
EP0707236A3 (en) * | 1994-10-11 | 1996-11-20 | At & T Corp | Masks with low stress multilayer films and a process for controlling the stress of multilayer films |
WO1999042901A1 (en) * | 1998-02-20 | 1999-08-26 | The Regents Of The University Of California | Method to adjust multilayer film stress induced deformation of optics |
JP2019036580A (en) * | 2017-08-10 | 2019-03-07 | 株式会社ニューフレアテクノロジー | Multi-charged particle beam lithography device |
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