JPS55108790A - Semiconductor luminous device - Google Patents

Semiconductor luminous device

Info

Publication number
JPS55108790A
JPS55108790A JP1561779A JP1561779A JPS55108790A JP S55108790 A JPS55108790 A JP S55108790A JP 1561779 A JP1561779 A JP 1561779A JP 1561779 A JP1561779 A JP 1561779A JP S55108790 A JPS55108790 A JP S55108790A
Authority
JP
Japan
Prior art keywords
layer
semiconductor
constitute
clad
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1561779A
Other languages
Japanese (ja)
Other versions
JPS575070B2 (en
Inventor
Mitsuhiro Yano
Hiroshi Nishi
Kimito Takusagawa
Yorimitsu Nishitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1561779A priority Critical patent/JPS55108790A/en
Priority to EP80300353A priority patent/EP0014588B1/en
Priority to DE8080300353T priority patent/DE3065856D1/en
Priority to US06/120,095 priority patent/US4329660A/en
Priority to CA000345585A priority patent/CA1149498A/en
Publication of JPS55108790A publication Critical patent/JPS55108790A/en
Publication of JPS575070B2 publication Critical patent/JPS575070B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To improve the luminous properties and reliability by a method wherein a clad layer, activated layer and clad layer are by turns formed on the substrate and the layer having a larger refractive index is selectively arranged on one side clad layer to demarkate the luminous region in the activated layer.
CONSTITUTION: A semiconductor layer 22 to constitute the first clad layer, a semiconductor layer 23 to constitute the activated layer and a semiconductor layer 24 to constitute the second clad layer are formed by turns on the semiconductor substrate 21. Next a positive electrode 27 is arranged on the semiconductor layer 24 to constitute the second clad layer, while a negative electrode 28 is arranged on the back of the semiconductor substrate 21. And at least one of the semiconductor layer 22, 24 to constitute the second clad layer, the semiconductor layer 25 having a larger refractive index than the semiconductor layer 24 is selectively arranged to demarkate the luminous region in the activated layer 23.
COPYRIGHT: (C)1980,JPO&Japio
JP1561779A 1979-02-13 1979-02-13 Semiconductor luminous device Granted JPS55108790A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP1561779A JPS55108790A (en) 1979-02-13 1979-02-13 Semiconductor luminous device
EP80300353A EP0014588B1 (en) 1979-02-13 1980-02-06 A semiconductor light emitting device
DE8080300353T DE3065856D1 (en) 1979-02-13 1980-02-06 A semiconductor light emitting device
US06/120,095 US4329660A (en) 1979-02-13 1980-02-11 Semiconductor light emitting device
CA000345585A CA1149498A (en) 1979-02-13 1980-02-13 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1561779A JPS55108790A (en) 1979-02-13 1979-02-13 Semiconductor luminous device

Publications (2)

Publication Number Publication Date
JPS55108790A true JPS55108790A (en) 1980-08-21
JPS575070B2 JPS575070B2 (en) 1982-01-28

Family

ID=11893662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1561779A Granted JPS55108790A (en) 1979-02-13 1979-02-13 Semiconductor luminous device

Country Status (1)

Country Link
JP (1) JPS55108790A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS603179A (en) * 1983-06-21 1985-01-09 Toshiba Corp Semiconductor laser device
JPS6273687A (en) * 1985-09-26 1987-04-04 Mitsubishi Electric Corp Semiconductor laser device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59174071U (en) * 1983-05-09 1984-11-20 掛川　淳 picture frame
JPS6056365U (en) * 1983-09-26 1985-04-19 オリジン商事株式会社 Picture frame back plate holder
JPS61149563U (en) * 1985-03-08 1986-09-16
JPS62100067U (en) * 1985-12-13 1987-06-25
JPS6354369U (en) * 1986-09-30 1988-04-12

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105393A (en) * 1979-02-08 1980-08-12 Nippon Telegr & Teleph Corp <Ntt> Process of semiconductor laser device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105393A (en) * 1979-02-08 1980-08-12 Nippon Telegr & Teleph Corp <Ntt> Process of semiconductor laser device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS603179A (en) * 1983-06-21 1985-01-09 Toshiba Corp Semiconductor laser device
JPS6273687A (en) * 1985-09-26 1987-04-04 Mitsubishi Electric Corp Semiconductor laser device

Also Published As

Publication number Publication date
JPS575070B2 (en) 1982-01-28

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