JPS5934632A - Manufacture of x-ray mask - Google Patents
Manufacture of x-ray maskInfo
- Publication number
- JPS5934632A JPS5934632A JP57144858A JP14485882A JPS5934632A JP S5934632 A JPS5934632 A JP S5934632A JP 57144858 A JP57144858 A JP 57144858A JP 14485882 A JP14485882 A JP 14485882A JP S5934632 A JPS5934632 A JP S5934632A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- pattern
- ray
- film
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000010894 electron beam technology Methods 0.000 claims abstract description 11
- 229920001721 polyimide Polymers 0.000 claims abstract description 10
- 230000001133 acceleration Effects 0.000 claims abstract description 7
- 238000009713 electroplating Methods 0.000 claims abstract description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 6
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 6
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 21
- 229910052737 gold Inorganic materials 0.000 abstract description 21
- 239000010931 gold Substances 0.000 abstract description 21
- 239000010408 film Substances 0.000 abstract description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 7
- 239000010409 thin film Substances 0.000 abstract description 7
- 239000010936 titanium Substances 0.000 abstract description 7
- 229910052719 titanium Inorganic materials 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052804 chromium Inorganic materials 0.000 abstract description 4
- 239000011651 chromium Substances 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 7
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000009719 polyimide resin Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Abstract
Description
【発明の詳細な説明】
［発明の属する技術分野］
本発明は、Ｘ線露光に使用されるＸ線露光用マスクの製
造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to a method for manufacturing an X-ray exposure mask used for X-ray exposure.
［従来技術とその問題点］
近時、より高性能な半導体集積回路を製造するために、
１μ域いはそれ以下の寸法を有するパターンを、半導体
基板上に形成する要求が高まっている。Ｘ線（主に波長
４〜１３Åの軟Ｘ線）を使用したパターン転写技術であ
るＸ線露光は、塵埃の影響を受けにくい、転写されたパ
ターンの精度が高い等の多くの特長があり、特にサブミ
クロンパターン形成において有力な技術とされている。[Prior art and its problems] Recently, in order to manufacture higher performance semiconductor integrated circuits,
There is an increasing demand for forming patterns on semiconductor substrates with dimensions of 1 μm or less. X-ray exposure is a pattern transfer technology that uses X-rays (mainly soft X-rays with a wavelength of 4 to 13 Å), and has many features such as being less susceptible to dust and having high accuracy in transferred patterns. In particular, it is considered to be a powerful technology in submicron pattern formation.
第１図はＸ線露光用マスクで、このマスク１はＸ線に対
し透過率の高い材料からなる薄膜Ｘ線マスク基板２を支
持枠３に固定すると共に、薄膜Ｘ線マスク基板２の下面
にＸ線吸収部材、例えば厚さ０．５〜１．０μの金から
なる所望のマスクパターン４を接着して形成されている
。マスク１の下方にはレジスト５で塗布された試料６が
配置され、またマスク１の上方にはＸ線源７が配置され
る。そしてＸ線源７からマスク１にＸ線を照射すること
により、マスク１を透過したＸ線が試料６上のレジスト
５に照射され、同レジスト５にパターン４が露光される
ことになる。FIG. 1 shows a mask for X-ray exposure. This mask 1 has a thin film X-ray mask substrate 2 made of a material with high transmittance for X-rays fixed to a support frame 3, and a It is formed by adhering a desired mask pattern 4 made of an X-ray absorbing member, for example, gold with a thickness of 0.5 to 1.0 μm. A sample 6 coated with a resist 5 is placed below the mask 1, and an X-ray source 7 is placed above the mask 1. Then, by irradiating the mask 1 with X-rays from the X-ray source 7, the X-rays transmitted through the mask 1 are irradiated onto the resist 5 on the sample 6, and the pattern 4 is exposed on the resist 5.
Ｘ線露光用マスクに対する要求として、薄膜基板上に形
成されたＸ線吸収部材から成るマスクパターンの断面形
状は短形でなければならない。前記第１図に示した如く
Ｘ線源７から発生したＸ線束は、薄膜基板３上二形成さ
れたマスクパターン４、例えば厚さ０．５μの金パター
ン４ａ，４ｂの像を、ウェーハ６上に塗布したレジスト
５に形成する。そして、マスクパターン４が金パターン
４ａの如く台形状の断面形状を有する場合、れじすと５
中に転写される像は、■の幅だけ端部がぼけてしまう。As a requirement for an X-ray exposure mask, the cross-sectional shape of a mask pattern made of an X-ray absorbing member formed on a thin film substrate must be rectangular. As shown in FIG. 1, the X-ray flux generated from the X-ray source 7 images the image of the mask pattern 4 formed on the thin film substrate 3, for example, the gold patterns 4a and 4b with a thickness of 0.5μ, onto the wafer 6. It is formed on the resist 5 coated on the substrate. When the mask pattern 4 has a trapezoidal cross-sectional shape like the gold pattern 4a, the edges are 5
The edges of the image transferred inside are blurred by the width of ■.
このため、マスクパターン４の断面は、金パターン４ｂ
の様に短形でなければならない。Therefore, the cross section of the mask pattern 4 is similar to the gold pattern 4b.
It must be rectangular like .
金パターンを形成する方法として、Ｘ線マスク基板上に
レジストパターンを形成し、レジストパターンの溝に金
を電気メッキする方法がある。ところが電子ビーム露光
でレジストパターンを形成するようにした場合、ある寸
法のパターンに関しては短形のレジストパターンが得ら
れても他の寸法のパターンに対しては断面形状が台形や
逆台形になる等、高精度のＸ線露光を実現できる様な金
パターンを形成する事は困難であった。As a method for forming a gold pattern, there is a method of forming a resist pattern on an X-ray mask substrate and electroplating gold into the grooves of the resist pattern. However, when a resist pattern is formed by electron beam exposure, although a rectangular resist pattern may be obtained for a pattern of a certain size, the cross-sectional shape of a pattern of other dimensions becomes a trapezoid or an inverted trapezoid. However, it has been difficult to form a gold pattern that allows high-precision X-ray exposure.
従って、従来、短形な金パターンを形成する方法は次の
様に極めて複雑な方法を取らざるを得なかった。Therefore, conventional methods for forming rectangular gold patterns have had to be extremely complicated as described below.
まず第２図（ａ）に示す如く基板（ガラス等）１１上に
、金メッキのための厚さ２００Å程度の金の薄膜１２及
び反応性イオンエッチングの停止膜となる厚さ１０００
Å程度のチタン層１３でそれぞれ蒸着により形成する。First, as shown in FIG. 2(a), a thin gold film 12 with a thickness of about 200 Å for gold plating and a thin gold film 12 with a thickness of 1000 Å as a stop film for reactive ion etching are placed on a substrate (glass etc.) 11.
A titanium layer 13 having a thickness of about Å is formed by vapor deposition.
さらに、チタン層１３上にたとえばポリイミド樹脂から
なる厚さ１μ程度の被膜１４を回転塗布により形成し、
この被膜１４上にレジスト１５を塗布する。次に、電子
線描写装置を用い、現像後のレジスト断面形状が第２図
（ｂ）に示す如く逆台形状になる様描写し現像をおこな
う。現像後、厚さ１０００Åのチタン層１６を真空蒸着
で形成すると第２図（ｃ）に示す状態となる。第２図（
ｄ）示す如くレジスト１５を除去し、さらに酸素ガスを
含む反応性イオンエッチングでポリイミド被膜１４をエ
ッチングすると、残されたポリイミド被膜１４の側壁は
同図（ｅ）に示す如く垂直に切り立ったものとなる。こ
こで、チタン層１３を、希釈した弗酸により除去した後
、金の電気メッキをおこなう（第２図ｆ）。続いて、第
２図（ｇ）に示す如くポリイミド被膜１４を、ヒドラジ
ン等によって除去する。最後に希釈した弗酸を用いてチ
タン層１３で除去し、希釈した王水で金の薄膜１２の一
部を除去すると、第２図（ｈ）に示す垂直な側壁を有す
る金パターン１７が得られる。Further, a coating 14 of about 1 μm thick made of polyimide resin, for example, is formed on the titanium layer 13 by spin coating,
A resist 15 is applied onto this film 14. Next, using an electron beam drawing device, development is performed so that the cross-sectional shape of the resist after development becomes an inverted trapezoidal shape as shown in FIG. 2(b). After development, a titanium layer 16 having a thickness of 1000 Å is formed by vacuum evaporation, resulting in the state shown in FIG. 2(c). Figure 2 (
d) When the resist 15 is removed as shown and the polyimide film 14 is etched by reactive ion etching containing oxygen gas, the side walls of the remaining polyimide film 14 become vertical as shown in FIG. Become. Here, after removing the titanium layer 13 with diluted hydrofluoric acid, electroplating with gold is performed (FIG. 2f). Subsequently, as shown in FIG. 2(g), the polyimide film 14 is removed using hydrazine or the like. Finally, by removing the titanium layer 13 using diluted hydrofluoric acid and removing a portion of the gold thin film 12 using diluted aqua regia, a gold pattern 17 having vertical sidewalls as shown in FIG. 2(h) is obtained. It will be done.
このようにすれば、垂直な側壁を持つ金パターンが得ら
れるが次の様な問題があった。すなわちリフトオフ技術
とパターントランスファ技術を用いるため工程数が著し
く多く、又、第２図（ｂ）に示した工程でレジスト１５
の断面形状を逆台形状にしなくてはならないが、レジス
ト断面形状を逆台形状に形成するには露光量を極めて多
くしなければならず、実用的ではなかった。また、レジ
スト中に形成される図形の横方向の寸法と厚さ方向の形
状とを同時に判御することは極めて難しく、このため、
マスクパターンを精度良く形成することは困難であった
。In this way, a gold pattern with vertical sidewalls can be obtained, but there are the following problems. In other words, since lift-off technology and pattern transfer technology are used, the number of steps is extremely large, and the resist 15
The cross-sectional shape of the resist must be made into an inverted trapezoidal shape, but in order to form the resist cross-sectional shape into an inverted trapezoidal shape, the amount of exposure must be extremely large, which is not practical. Furthermore, it is extremely difficult to simultaneously control the lateral dimension and thickness direction of the figure formed in the resist.
It has been difficult to form mask patterns with high precision.
［発明の目的］
本発明は上記事情を考慮してなされたもので、その目的
とするところは、短形の断面形状を有するＸ線吸収部材
からなるマスクパターンを容易かつ高精度に形成するこ
とができるＸ線露光用マスクの製造方法を提供すること
にある。[Object of the Invention] The present invention has been made in consideration of the above circumstances, and its purpose is to easily and highly accurately form a mask pattern made of an X-ray absorbing member having a rectangular cross-sectional shape. It is an object of the present invention to provide a method for manufacturing an X-ray exposure mask that can perform the following steps.
［発明の概要］
本発明は、支持枠用基板表面にＸ線マスク基板を形成す
る工程と、このＸ線マスク基板上にレジスト膜を形成す
る工程と、加速電圧５０ＫＶ以上の電子ビームを照射し
てレジスト膜を露光する工程と、このレジスト膜を現像
してレジストパターンを形成する工程と、レジストパタ
ーンの溝にＸ線吸収部材を形成する工程と、前記支持枠
用基板のＸ線マスク領域を裏面から除去する工程とを具
備した事を特徴とするＸ線マスクの製造方法を提供する
ものである。[Summary of the Invention] The present invention comprises the steps of forming an X-ray mask substrate on the surface of the support frame substrate, forming a resist film on the X-ray mask substrate, and irradiating an electron beam with an acceleration voltage of 50 KV or more. a step of exposing the resist film to light, a step of developing the resist film to form a resist pattern, a step of forming an X-ray absorbing member in the groove of the resist pattern, and a step of exposing the X-ray mask area of the support frame substrate to light. The present invention provides a method for manufacturing an X-ray mask characterized by comprising a step of removing it from the back side.
［発明の効果］
本発明は、Ｓｉウェハーやガラス基板等の厚版上に形成
したレジストパターン形状のばらつきは、加速電圧を５
０ｋＶ以上にした電子ビームを用いる事によりなくすこ
とができる事を思い出して為されたものであり、かかる
加速電圧の電位ビームを用いて種々のパターン巾を有す
るＸ線露光マスクを製作する事により容易かつ高精度に
Ｘ線露光マスクを得ることができるようになる。[Effects of the Invention] According to the present invention, variations in the shape of a resist pattern formed on a thick plate such as a Si wafer or a glass substrate can be reduced by increasing the accelerating voltage to 50%.
This was done by remembering that this can be eliminated by using an electron beam with an acceleration voltage of 0 kV or more, and it is easier to manufacture X-ray exposure masks with various pattern widths using a potential beam with such an accelerating voltage. Moreover, it becomes possible to obtain an X-ray exposure mask with high precision.
［発明の実施例］
以下、本発明の実施例を第３図（ａ）〜（ｅ）を参照し
ながら詳逑する。[Embodiments of the Invention] Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. 3(a) to (e).
先ず、第３図（ａ）に示す如く、４インチ径、厚さ２０
０μ〜例えば３００μのシリコンウェハ１０１上にクロ
ム、金、チタンの順に３層からなる計１０００Å厚の金
■薄膜１０２を形成する。次いで、この基板上に厚さ２
μのポリイミド膜１０３を回転塗布後熱処理して形成す
る。次に、電気メッキの導電層１０４としてクロム、金
の２層を計２００Å程度蒸着形成する（第３図ａ）。そ
して厚さ１μのＰＭＭＡレジスト１０５を回転塗布する
（第３図ｂ）。次に加速電圧５０ＫＶ，ドーズ量７０μ
ｃ／ｃｍ２で電子ビームで露光する。露光は電子ビーム
を走査しておこなったが形状可変のビームでパターンに
応じて露光するようにしてもよい。次にこのレジストを
現像して第３図（ｃ）に示すようにレジストパターン１
０６を得た。第４図は、パターン寸法に対するレジスト
パターン断面の傾斜角の関係を示したものでである。図
中、ａ〜ｄは、夫々加速電圧が２０，３０，４０，５０
ＫＶの場合を示したものであり、夫々適正露光を与えて
いる。同図から判る様に加速電圧が５０ＫＶの場合、各
パターン寸法に対して、ほぼ垂直なレジスト断面形状を
得た。First, as shown in Fig. 3(a), a diameter of 4 inches and a thickness of 20
A thin gold film 102 having a total thickness of 1000 Å and consisting of three layers of chromium, gold, and titanium in this order is formed on a silicon wafer 101 having a thickness of 0 μm to, for example, 300 μm. Then, on this substrate, a thickness of 2
A polyimide film 103 of μ is formed by spin coating and then heat treatment. Next, as a conductive layer 104 for electroplating, two layers of chromium and gold are deposited to a total thickness of about 200 Å (FIG. 3a). Then, a PMMA resist 105 having a thickness of 1 μm is applied by spin coating (FIG. 3b). Next, the acceleration voltage is 50KV and the dose is 70μ.
Exposure to electron beam at c/cm2. Exposure was performed by scanning an electron beam, but exposure may be performed using a shape-variable beam according to a pattern. Next, this resist is developed to form a resist pattern 1 as shown in FIG. 3(c).
I got 06. FIG. 4 shows the relationship between the inclination angle of the resist pattern cross section and the pattern dimension. In the figure, a to d indicate acceleration voltages of 20, 30, 40, and 50, respectively.
This shows the case of KV, and appropriate exposure is given to each. As can be seen from the figure, when the accelerating voltage was 50 KV, a cross-sectional shape of the resist almost perpendicular to each pattern dimension was obtained.
これは、電子の後方散乱が減少して所謂■接効果が抑え
られたことによるものと考えられる。ＰＭＭＡの他、Ｅ
ＢＲ−９，ＡＺレジスト等の電子ビームレジストでも同
様の結果を得た。This is considered to be due to the fact that backscattering of electrons is reduced and the so-called contact effect is suppressed. In addition to PMMA, E
Similar results were obtained with electron beam resists such as BR-9 and AZ resists.
次いで第３図（ｃ）の工程後、レジストパターンの溝部
に金属１０７を０．７μ電気メッキにより形成した。し
かる後、レジストパターン１０６を除去し（第３図ｄ）
、枠となる部分を残してＳｉウェハー１０１、金属薄膜
１０２を裏面からエッチング除去した（第３図ｅ）。After the step shown in FIG. 3(c), metal 107 was formed in the grooves of the resist pattern by 0.7μ electroplating. After that, the resist pattern 106 is removed (FIG. 3d).
Then, the Si wafer 101 and the metal thin film 102 were removed by etching from the back side, leaving a portion that would become a frame (FIG. 3e).
かくして得られたＸ線露光マスクを用いて０．５〜１０
μ巾のパターンをシリコンウェハー上に形成した結果、
極めて高精度にパターンを得ることができた。Using the thus obtained X-ray exposure mask,
As a result of forming μ-wide patterns on silicon wafers,
We were able to obtain patterns with extremely high precision.
又、上記ポリイミド樹脂を用いた場合におけるＰＭＭＡ
レジストのドーズ量とレジストパターン断面の傾斜角の
関係を実験した結果、種々のパターン巾に対して垂直な
レジスト断面形状を得るドーズ量は７０μｃ／ｃｍ２以
上必要であった。In addition, PMMA when using the above polyimide resin
As a result of experiments on the relationship between the dose of the resist and the inclination angle of the cross section of the resist pattern, it was found that a dose of 70 μc/cm 2 or more was required to obtain resist cross-sectional shapes perpendicular to various pattern widths.
上記実施例では支持枠用基板としてシリコンウェハーを
用いたが、ガラス等を用いてもよい。又、ポリイミド樹
脂の代わりに酸化シリコン（ＳｉＯ２）、窒化シリコン
（Ｓｉ，Ｎ４）及びそれらの積層膜、或いは多結晶シリ
コン、窒化硼素等の無機膜を用いることができる。In the above embodiment, a silicon wafer was used as the support frame substrate, but glass or the like may also be used. Furthermore, instead of polyimide resin, silicon oxide (SiO2), silicon nitride (Si, N4), or a laminated film thereof, or an inorganic film such as polycrystalline silicon or boron nitride can be used.
以上説明した様に、本発明によれば容易かつ高精度にＸ
線露光マスクを得ることができる。As explained above, according to the present invention, the X
A line exposure mask can be obtained.
第１図はＸ線露光の原理を示す模式図、第２図（ａ）〜
（ｈ）は従来のＸ線露光用マスクの製造工程を示す断面
図、第３図（ａ）〜（ｅ）は本発明の実施例の断面図、
第４図は本発明を説明するための特性図である。
図において、
１０１・・シリコンウェハー、１０２・・金属薄膜、１
０３・・ポリイミド樹脂膜、１０４・・導電層、１０５
・・ＰＭＭＡレジスト、１０６・・レジストパターン、
１０７・・・金層■Figure 1 is a schematic diagram showing the principle of X-ray exposure, Figure 2 (a) -
(h) is a sectional view showing the manufacturing process of a conventional X-ray exposure mask, FIGS. 3(a) to (e) are sectional views of an embodiment of the present invention,
FIG. 4 is a characteristic diagram for explaining the present invention. In the figure, 101... silicon wafer, 102... metal thin film, 1
03... Polyimide resin film, 104... Conductive layer, 105
...PMMA resist, 106...resist pattern,
107...Gold layer■
Claims (3)
程と、このＸ線マスク基板上にレジスト膜を形成する工
程を、加速電圧５０ＫＶ以上の電子ビームを照射してレ
ジスト膜を露光する工程と、このレジスト膜を現像して
レジストパターンを形成する工程と、レジストパターン
の溝にＸ線吸収部材を形成する工程と、前記支持枠用基
板のＸ線マスク領域を裏面から除去する工程とを見備し
た事で特徴とするＸ線マスクの製造方法。(1) The step of forming an X-ray mask substrate on the surface of the support frame substrate and the step of forming a resist film on the X-ray mask substrate are performed by irradiating the resist film with an electron beam with an acceleration voltage of 50 KV or higher to expose the resist film. a step of developing this resist film to form a resist pattern; a step of forming an X-ray absorbing member in the groove of the resist pattern; and a step of removing the X-ray mask area of the support frame substrate from the back surface. A manufacturing method for an X-ray mask characterized by the following.
してＰＭＭＡレジストを用い、電子ビームのドーズ量を
７０ＭＣ／ｃｍ２以上とした事を特徴とする前記特許請
求の範囲第１項記載のＸ線マスクの製造方法。(2) Manufacturing the X-ray mask according to claim 1, characterized in that a polyimide film is used as the X-ray mask substrate, a PMMA resist is used as the resist, and the dose of the electron beam is set to 70 MC/cm2 or more. Method.
とする前記特許請求の範囲第１項記載のＸ線マスクの製
造方法。(3) The method for manufacturing an X-ray mask according to claim 1, characterized in that the X-ray absorbing member is provided by electroplating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57144858A JPS5934632A (en) | 1982-08-23 | 1982-08-23 | Manufacture of x-ray mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57144858A JPS5934632A (en) | 1982-08-23 | 1982-08-23 | Manufacture of x-ray mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5934632A true JPS5934632A (en) | 1984-02-25 |
Family
ID=15372037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57144858A Pending JPS5934632A (en) | 1982-08-23 | 1982-08-23 | Manufacture of x-ray mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5934632A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4606803A (en) * | 1983-11-02 | 1986-08-19 | U.S. Philips Corporation | Method of manufacturing a mask for the production of patterns in lacquer layers by means of X-ray lithography |
| JPS6246523A (en) * | 1985-08-22 | 1987-02-28 | ケルンフオルシユングスツエントルム・カ−ルスル−エ・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Manufacture of mask for x-rays deep lithography |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5317075A (en) * | 1976-07-30 | 1978-02-16 | Nec Corp | Production of silicon mask for x-ray exposure |
-
1982
- 1982-08-23 JP JP57144858A patent/JPS5934632A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5317075A (en) * | 1976-07-30 | 1978-02-16 | Nec Corp | Production of silicon mask for x-ray exposure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4606803A (en) * | 1983-11-02 | 1986-08-19 | U.S. Philips Corporation | Method of manufacturing a mask for the production of patterns in lacquer layers by means of X-ray lithography |
| JPS6246523A (en) * | 1985-08-22 | 1987-02-28 | ケルンフオルシユングスツエントルム・カ−ルスル−エ・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Manufacture of mask for x-rays deep lithography |
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