JP2874683B2 - Mask for electronic beam apparatus and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mask for an electron beam apparatus and a method of manufacturing the same, and more particularly, to an electron beam drawing method capable of drawing a portion formed by repeating a pattern at a time. The present invention relates to a suitable mask for an electron beam apparatus and a method for manufacturing the same.

[0002]

2. Description of the Related Art Electron beam lithography using an electron beam is an effective exposure method for forming a fine pattern because it can obtain a higher resolution than optical lithography. However, in the conventional electron beam drawing method,
Since the drawing method was based on the connection method of minute figures using variable shaping, the throughput was low.

Since the cell portion of a memory IC chip or the like has several basic repetitive patterns, the basic pattern is collectively drawn and the drawing portion is sequentially moved to repeatedly expose. By doing so, there has been proposed a "batch drawing method" in which drawing of a cell portion can be completed in a short time. Thereby, the number of shots for one chip is smaller than that of the above-described variable molding which is conventionally used, so that a high throughput can be obtained.

[0004] In the above batch writing method, a mask for an electron beam apparatus on which a plurality of desired patterns are formed in advance is required. Here, a conventional mask for an electron beam apparatus (conventional example 1)
3) will be described with reference to FIGS.

(Conventional Example 1) FIG.
"November / December 1994," Journal of Vacuum Science Technology ", Volume B-12, Issue 6 (34
04-3408)] [“J. Vac. Sci. Technol.” B 12 (6), Nov
/ Dec 1994 (p.3404-3408)], showing a mask (B) for an electron beam apparatus. FIG. 6A is a plan view of the electron beam apparatus mask (B), and FIG. 6B is a cross-sectional view taken along the line cc of FIG. FIG. 6C shows the pattern block area 2 of the mask (B) for the electron beam apparatus shown in FIG.
FIG.

Conventional Example 1 Mask for Electronic Beam Apparatus (B)
Is a thin film region 1 in which the thickness “t” of a wide central portion is about 20 μm, and the thickness “T” is 500 to 6
A mask support portion 4 of 00 μm is formed [(b) of FIG.
reference]. In the thin film region 1, a plurality of pattern block regions 2 are arranged in a line, and various pattern-shaped openings 3a to 3e are formed in the pattern block region 2 [FIG. 6 (c)]. (In FIG. 6 (c),
Reference numeral 7 denotes a beam size correction opening, and reference numeral 8 denotes a beam blocking area. )

One of the plurality of pattern block areas 2 is selected, and the electron beam penetrates one of the pattern-shaped openings 3 formed therein, so that one is formed. A basic pattern is formed. Similarly, by selecting and repeating another pattern block area 2, various basic patterns are transferred onto the wafer.

(Conventional Example 2) FIG.
"1994," SPII I Photomask
And X-Layer Mask Technology ”,
Vol. 2254 (pp. 126-132)] [1994 “SPIE”, Vol. 22
54, “Photomask and X-Ray Mask Technology” (p.126)
To 132)], a mask (C) for an electron beam apparatus according to the present invention.
FIG. 7A is a plan view of the electron beam apparatus mask (C), and FIG. 7B is a sectional view taken along line dd of FIG. Also,
FIG. 7C is an enlarged detailed view of a portion including the pattern block region 2 of the mask (C) for the electron beam apparatus shown in FIG. 7A.

Conventional Example 2 Mask for Electronic Beam Apparatus (C)
A mask support 4 is formed around a pattern block area 2 in which a pattern opening 3 is formed in a thin film area 1.
It has a structure in which an inter-block thick film mask support portion 20 having the same thickness "T" and flat portions on the front and back surfaces is provided [see FIG. 7B]. Also, the pattern block area 2
As in the first conventional example, various pattern-shaped openings 3a to 3e are formed [see FIG. 7 (c)]. (Note that in FIG. 7C, reference numeral 7 denotes a beam size correction opening, and reference numeral 8 denotes a beam blocking area.)

[0010] Mask of the prior art 2 for an electron beam apparatus
(C) has the same thickness "T" as the mask supporting portion 4 as compared with the mask (B) for the electron beam apparatus of the conventional example 1 shown in FIG.
The provision of the inter-block thick film mask support portion 20 has an advantage that the mechanical strength of the mask for the electron beam apparatus is improved.

(Conventional Example 3) FIG. 8 and FIG.
An electronic beam disclosed in Japanese Patent Application Laid-Open No. 2-76216
₂ shows masks (D ₁ ) and (D ₂ ) for the memory device. 8A is a plan view of a mask (D ₁ ) for an electron beam apparatus, FIG. 8B is a sectional view taken along the line ee of FIG. 8A, and FIG. FIG. 4 is an enlarged detailed view of a portion including a pattern block region 2 of the mask (D ₁ ) for an electron beam apparatus. 9A is a plan view of an electron beam apparatus mask (D ₂ ), FIG. 9B is a cross-sectional view taken along line ff of FIG. 9A, and FIG. FIG. 3 is an enlarged detailed view of a portion including a pattern block region 2 of the illustrated electron beam apparatus mask (D ₂ ).

Conventional Example 3 Mask for Electronic Beam Apparatus (D ₁ )
Is a mask for an electron beam apparatus in which a frame base 21 (see FIG. 8B) is formed in the X direction and the Y direction. Similarly, the mask (D ₂ ) for the electron beam apparatus of the conventional example 3 is a frame base 2
Reference numeral 1 [see FIG. 9B] denotes an electron beam apparatus mask formed only in one direction of the X direction or the Y direction.

That is, a mask for an electron beam apparatus according to Conventional Example 3
(D ₁ ) and (D ₂ ) are pattern-shaped openings 3 in the thin film region 1.
Are provided around the pattern block region 2 where the frame base 21 is formed, which is thicker than the pattern-shaped opening 3 and slightly lower than the mask supporting portion 4 and has no flat portion on the back surface. The frame base 21 has a structure formed in both the X direction and the Y direction (see FIG. 8) or a structure formed in only one direction in the X direction or the Y direction (see FIG. 9). .

A mask for an electron beam apparatus according to the prior art 3 described above.
(D ₁ ) and (D ₂ ) are similar to the mask (C) for the electron beam apparatus of the prior art 2 shown in FIG. Can be improved in mechanical strength.

[0015]

However, the masks for the electron beam apparatus as in the prior art examples 1 to 3 have the following disadvantages and problems.

First, in the mask (B) for the electron beam apparatus of the prior art 1 shown in FIG. 6 described above, the thickness "t" of the pattern-shaped opening 3 in the thin film region 1 and its periphery is 20 .mu.m. Therefore, there is a disadvantage that the mechanical strength of the mask is low. Therefore, when the thin film region 1 is attached to the mask holder, there is a possibility that the thin film region 1 may be damaged by an impact or the like. Further, since it is difficult to reduce the thickness of the pattern-shaped opening 3 to a thickness "t", there is a problem that the processing accuracy of the pattern-shaped opening 3 cannot be improved.

Next, in the mask (C) for the electron beam apparatus of the prior art 2 shown in FIG. 7 described above, the thickness "T" of the same thickness as the mask supporting portion 4 is provided between the pattern block regions 2. A wide space is required for forming the inter-block thick film mask support portion 20, and therefore, there is a problem that the number of pattern block regions 2 that can be formed is small. As a result, DRAM
As the number of "pattern block regions 2 in which various pattern-shaped openings 3 are formed" is increased due to the increase in the number of basic patterns in the batch writing method due to the higher integration and miniaturization of memory cells. It has the disadvantage that it is difficult to increase.

In the masks (D ₁ ) and (D ₂ ) for the electron beam apparatus of the prior art 3 shown in FIGS.
When a conductive layer (Au, W, Ti, etc.) for preventing buckling is formed by sputtering, the shape of the back surface of the frame base 21 between the pattern block regions 2 is not flattened, so that the conductive layer is difficult to adhere. There's a problem.

The present invention has been made in view of the above-mentioned drawbacks and problems of Conventional Examples 1 to 3, and has as its object the first object is to significantly increase the number of steps as compared with the conventional manufacturing steps. The mechanical strength of the mask for the electron beam apparatus can be improved, the number of pattern block regions can be increased, and the thickness of the pattern-shaped opening can be reduced to "t". Electronic beam that can be used to improve machining accuracy
It is an object of the present invention to provide a mask for a memory device and a method for manufacturing the same.

A second object of the present invention is to provide a mask for an electron beam apparatus which can easily form a conductive layer for preventing charge-up, and a method of manufacturing the same. An object of the present invention is to provide a mask for an electron beam apparatus suitable for an electron beam drawing method (batch drawing method) which can collectively draw a portion formed by repeating a pattern, and a method of manufacturing the same.

[0021]

According to the present invention, a mask for an electron beam apparatus and a method of manufacturing the same according to the present invention are characterized by the following points in order to achieve the first to third objects. (In order to make it easier to understand the features of the present invention, reference will be made to FIG.

A feature of the present invention is that (A) a plurality of patterns in which various pattern-shaped openings 3 are formed in the thin film region 1.
A block having a thickness greater than the thickness "t" of the pattern-shaped opening 3 and a thickness less than the thickness "T" of the mask supporting portion 4 between the blocking regions 2 and having flat portions on the front and back surfaces. An inter-layer thin film mask supporting portion 5 is formed, or (B) a pattern-forming opening 3 in the pattern block region 2 where the pattern-forming opening 3 is not formed. A second inter-block thin film mask support 6 having a thickness greater than the thickness "t" of the opening 3 and a thickness "T" smaller than the thickness of the mask support 4 and having flat portions on the front and back surfaces. Form,
On the point.

That is, the mask for an electron beam apparatus according to the present invention is used for a pattern formed on a wafer by using an electron beam drawing method, in a portion formed by repeating the pattern. One of a plurality of pattern block regions in which a pattern-shaped opening having a shape corresponding to the pattern is formed is selected, and a pattern-shaped opening formed therein is selected. A mask for an electron beam apparatus for irradiating one with an electron beam and writing all at once, comprising:-a plurality of pattern block regions in which the pattern-shaped openings are formed; Thickness greater than the thickness of the opening-shaped opening portion, thinner than the thickness of the mask support portion, having a flat portion on the front and back, forming an inter-block thin film mask support portion (Claim 1), or .Pattern-shaped openings in the pattern block area In the beam blocking area for variable molding where no part is formed,
Forming a second inter-block thin film mask support portion having a thickness larger than the thickness of the pattern opening and smaller than the thickness of the mask support portion and having flat portions on the front and back surfaces (
Claim 2) is the gist.

According to a second aspect of the present invention, there is provided a method of manufacturing a mask for an electron beam apparatus, comprising the steps of: Forming a lower layer, a second intermediate oxide film layer, a silicon intermediate layer, a first intermediate oxide film layer, and an upper silicon layer in this order, and preparing a silicon substrate on which they are bonded; (2) a surface of the bonded silicon substrate; Forming a thermal oxide film layer on the
(3) applying a first resist to the surface of the thermal oxide film layer, exposing and developing; (4) using the resist pattern formed by the first resist as a mask to form the thermal oxide film layer Etching, and (5) etching the silicon upper layer after removing the first resist;
(6) a step of forming a nitride film layer on the entire surface of the substrate, (7) a step of applying a second resist on the back surface of the substrate, exposing and developing, and (8) a resist pattern formed by the second resist. Etching the nitride film layer using the mask as a mask; (9) wet etching the silicon lower layer after removing the second resist; and (10) forming a nitride film layer again on the entire surface of the substrate. (11) applying a second resist again on the back surface of the substrate, exposing and developing, and (12) performing the nitriding using the resist pattern formed by the second resist as a mask. Etching the film layer and the second intermediate oxide film layer; (13) wet etching the silicon intermediate layer after removing the second resist; and (14) etching the nitride film layer on the entire surface of the substrate. After removing the Electron beam to the steps of film formation, comprising the a - method for manufacturing a beam device mask (Claim 4). Is the gist.

[0025]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described. Preferred embodiments of the present invention include:
3. A mask for an electron beam apparatus according to claim 1, wherein: an upper silicon layer, a first intermediate oxide layer, a silicon intermediate layer,
That is, a bonded silicon substrate having a five-layer structure of a second intermediate oxide film layer and a silicon lower layer is used. Further, the first intermediate oxide film layer and the second intermediate oxide film layer of the bonded silicon substrate each serve as an etching stopper.

Further, the mask for an electron beam device and the method of manufacturing the same according to the present invention are characterized in that a conductive layer is formed on the entire surface. The conductive layer is a conductive layer for releasing charges accumulated in the mask for the electron beam device, improving the life and strength of the mask, and reducing the influence of heat. Although not limited, a conductive layer made of Au, W, and Ti is preferable.

Next, the operation of the mask for an electron beam apparatus according to the present invention and the method of manufacturing the same will be described. In this description, reference will be made to FIG. 1 which will be described in detail in Example 1 described later, and the description will be made using the reference numerals in FIG.

As described above, the feature of the present invention is that (A) a pattern is formed between a plurality of pattern block regions 2 in which various pattern-shaped openings 3 are formed in the thin film region 1. Forming an inter-block thin film mask support 5 having a thickness greater than the thickness "t" of the shape opening 3 and a thickness less than the thickness "T" of the mask support 4 and having flat portions on the front and back surfaces, or ,
(B) In the beam blocking area for variable shaping where the pattern opening 3 in the pattern block area 2 is not formed, the thickness "t" of the pattern opening 3 also increases. The second point is that a second inter-block thin film mask support 6 having a flat portion on the front and back surfaces, which is thicker and thinner than the thickness "T" of the mask support 4, is formed.

The present invention is characterized by the above points (A) and (B). The periphery of each pattern block region 2 is reinforced, the mechanical strength of the mask is improved, and the mask is subjected to handling. It is possible to prevent the thin film region 1 from being damaged by an impact or the like, and to reduce the number of the pattern block regions 2 in which the pattern-shaped openings 3 are formed in the thin film region 1 as compared with the conventional one. The thickness "t" of the pattern-shaped opening 3 formed in the pattern block region 2 can be reduced by improving the mechanical strength of the mask. Therefore, there is an effect that processing accuracy is improved and an excellent mask shape is obtained.

[0030]

EXAMPLES Next, the present invention will be described in detail with reference to examples of the present invention. However, the present invention is not limited to the following Examples 1 and 2, It can be appropriately modified and changed within the range.

(Embodiment 1) FIGS. 1 and 2 are views for explaining a mask for an electron beam apparatus according to an embodiment (Embodiment 1) of the present invention, of which FIG. Is the electronic beam
(B) is a cross-sectional view taken along the line aa of (a), and (c) includes a pattern block region of the mask for an electron beam apparatus shown in (a). It is an enlarged detail view of a part. FIG. 2D is a perspective view as viewed from a section taken along line aa of FIG. 1A.

A mask for an electron beam apparatus according to the first embodiment.
(A ₁ ) is formed by etching a bonded silicon substrate in which the thickness “T” of the mask supporting portion 4 (see FIG. 1B) is 500 to 600 μm. The bonded silicon substrate has a silicon upper layer 11, a first intermediate oxide film layer 12, and a silicon intermediate layer 1 as shown in [Step A] of FIG.
3, a bonded silicon substrate 9 having a five-layer structure of a second intermediate oxide film layer 14 and a silicon lower layer 15.

In the thin film region 1, there are a plurality of pattern block regions 2 [see FIGS. 1 (a) and 2 (d)].
In the block region 2, pattern-shaped openings 3a to 3e, which are patterns for partial batching, and a beam size correction opening 7 for variable deformation are formed (see FIG. 1C). . Each pattern block area 2 has a side length "n" of 400 to 600.
The pattern-shaped opening 3 and the beam size correcting opening 7 each have a side length of 125 μm.
And the thickness “t” is about 20 μm.

Around the pattern block area 2, the thickness "t" of the pattern-shaped opening 3 and the beam size correction opening 7 is larger than the thickness "T" of the mask support 4 and the thickness "T". It has a structure in which an inter-block thin film mask supporting portion 5 having a flat portion on the front and back surfaces is also formed. Also, the pattern-shaped opening and the beam size correction opening 7 are provided in the beam shaping region for variable shaping in which the pattern-shaped opening 3 is not formed in the pattern block region 2.
Thicker than the thickness “t” of the mask supporting portion 4 and “T”
The structure is such that a second thin film mask supporting portion 6 between blocks is formed, which is thinner and has flat portions on the front and back surfaces.

As a result, the periphery of each pattern block area 2 is reinforced, the mechanical strength of the mask is improved, and the thin film area 1 can be prevented from being damaged due to an impact received during handling. The number of the pattern block regions 2 in which the pattern-shaped openings 3 are formed in the thin film region 1 can be increased. In addition, since the mechanical strength of the mask is improved, the thickness "t" of the pattern-shaped opening 3 formed in the pattern block region 2 can be reduced. Thereby, the processing accuracy is improved and an excellent mask shape is obtained.

Next, a method of manufacturing the mask (A ₁ ) for the electron beam apparatus according to the first embodiment will be described with reference to FIGS. FIG. 3 is a cross-sectional view in the order of manufacturing steps including steps A to D, and FIG. 4 is a cross-sectional view in the order of manufacturing steps including steps E to H following step D in FIG.

Example 1 Mask for Electron Beam Apparatus
In manufacturing (A ₁ ), first, as shown in step A of FIG. 3, a silicon lower layer 15, a second intermediate oxide film layer 14, a silicon intermediate layer 13, and a first intermediate oxide film layer 12 are formed from below. , A silicon upper layer 11 are formed in this order, and a silicon substrate (bonded silicon substrate 9) is prepared by bonding these layers. Then, a thermal oxide film layer 10 is formed to a thickness of about 1 to 2 μm on the surface.

Thereafter, as shown in step B of FIG.
0.5 to 3 μm of resist 16 (depends on exposure equipment)
Coating, i-line stepper, laser drawing machine, repeater,
Exposure and development are performed using a double-sided aligner, an electronic beam drawing apparatus, or the like. Thereby, "the various pattern-shaped openings 3a to 3e and the beam size correction opening 7 formed in the plurality of pattern block areas 2" [see FIG. 1C described above]. A resist pattern is formed. At this time, an alignment mark is also formed on the surface.

Subsequently, as shown in step C of FIG.
The thermal oxide film layer 10 is plasma-etched using the resist pattern formed by the resist 16 as a mask to remove the first resist 16, and then the silicon upper layer 11 is plasma-etched.

Next, as shown in step D of FIG.
A nitride film layer 17 having a thickness of about .mu.m is formed on the entire surface of the substrate (bonded silicon substrate 9) by using the CVD method, and then a second resist 18 is applied to the back surface of the substrate, and the front surface is Exposure is performed by aligning the alignment mark of the backside exposure mask with the alignment mark.

Next, as shown in step E of FIG. 4, after the nitride film layer 17 is wet-etched or plasma-etched using the second resist 18 as a mask, the second resist 18 is removed, and the silicon lower layer 15 is etched with a KOH solution. Is wet-etched. Thus, a substrate having a shape as shown in step E of FIG. 4 is obtained.

On the substrate thus obtained, as shown in Step F of FIG.
7 is formed on the entire surface of the substrate by the CVD method, a second resist 18 is applied again on the back surface of the substrate, and the alignment mark on the front surface is exposed to the alignment mark on the front surface using a double-side aligner in the same manner as in the step D. Exposure is performed by aligning the mask with an alignment mark, and development is performed. [Thus, a resist pattern having the same shape as the "inter-block thin film mask support 5 and the second inter-block thin film mask support 6 (see FIGS. 1 and 2 described above)" which is a feature of the present invention is formed. . ]

Subsequently, as shown in step G in FIG. 4, after the nitride film layer 17 and the second intermediate oxide film layer 14 are plasma-etched using the resist pattern formed by the second resist 18 as a mask, the second 2 Remove resist 18 and KO
The silicon intermediate layer 13 is wet-etched with an H solution. Thus, a substrate having a shape as shown in step G of FIG. 4 is obtained.

Finally, after removing the nitride film layer 17 from the entire surface of the substrate, as shown in step H of FIG. 4, the charge accumulated in the mask for the electron beam apparatus is released to improve the life and strength of the mask. And a conductive layer 19 (A
u, W, Ti, etc.) over the entire surface of the substrate by sputtering.
A film is formed in a thickness of 5 to 2 μm (depending on the type of metal). Thereby, a mask for an electron beam device as shown in Step H of FIG. 4 can be obtained.

Example 1 Mask for Electronic Beam Apparatus
(A ₁ ) shows, as shown in FIG. 1 and FIG. 2 described above, that five pattern-shaped openings 3 (patterns) used in the collective drawing method in a plurality of pattern block areas 2. -Shaped opening 3
a to 3e: see FIG. 1 (c)). In the center, there is a "beam" for adjusting the size of the beam size by an exposure method of a connection method of a minute figure using variable shaping. 1 (see (c) of FIG. 1) is formed.
A mask for an electron beam apparatus corresponding to an exposure method of a connection method of a minute figure using a batch drawing method and a variable shaping can be obtained.

(Embodiment 2) FIG. 5 shows another embodiment of the present invention.
FIG. 4 is a view for explaining an electron beam apparatus mask according to (Embodiment 2), wherein (a) is a plan view of the electron beam apparatus mask, and (b) is (a). (B) is a sectional view taken along the line bb, and (c) is an enlarged detailed view of a portion including the pattern block region shown in (a).

Example 2 Mask for Electron Beam Apparatus
(A ₂ ) shows, as shown in FIG. 5 (c), the beam size correction opening 7 (see FIG. 1 (c)) in the first embodiment in the pattern block area 2. The second inter-block thin film mask supporting portion 6 is also provided in this portion without being formed, and is a mask for an electron beam apparatus compatible only with the batch writing method.

Therefore, the mask (A ₂ ) for the electron beam apparatus according to the _second embodiment has a higher mechanical strength than the mask (A ₁ ) for the electron beam apparatus according to the first embodiment. It has a structure.

Example 2 Mask for Electron Beam Apparatus
The manufacturing method of (A ₂ ) is performed in the same procedure as in the first embodiment shown in FIGS. 3 and 4 described above, and after the second resist 18 is applied for the second time [see step F in FIG. 4 described above]. When the back surface exposure is performed using the double-sided aligner, the same shape as the inter-block thin-film mask support portion 5 and the second inter-block thin-film mask support portion 6 having a different shape from the first embodiment (see FIG. 5C). Is formed.

Thereafter, the nitride film layer 17 and the second intermediate oxide film layer 14 are plasma-etched by using the resist pattern as a mask in accordance with the process G shown in FIG.
Is formed, the silicon intermediate layer 13 is formed by wet etching with a KOH solution.

[0051]

As described in detail above, the electronic beam of the present invention can be used.
According to the mask for a beam apparatus and the method of manufacturing the same, the mechanical strength of the mask for an electron beam apparatus is improved without significantly increasing the number of steps as compared with the conventional manufacturing process, and
The number of pattern block regions can be increased, and the thickness of the pattern-shaped opening can be reduced to "t", so that the effect of improving processing accuracy is obtained.

[Brief description of the drawings]

FIG. 1 is a view for explaining a mask for an electron beam apparatus according to one embodiment (Embodiment 1) of the present invention, wherein FIG.
Is a plan view of the mask for the electron beam apparatus, and FIG.
(a) is a sectional view taken along line aa, and (c) is an enlarged detailed view of a portion including the pattern block region shown in (a).

FIG. 2 is a perspective view as viewed from a cross section taken along line aa of FIG.

FIG. 3 is a view for explaining the method for manufacturing the mask for the electron beam apparatus according to the first embodiment, and is a cross-sectional view in the order of the manufacturing steps including steps A to D.

FIG. 4 is a cross-sectional view in the order of the manufacturing process including steps E to H following step D in FIG. 3;

FIG. 5 is an electronic beam according to another embodiment (Example 2) of the present invention.
FIG. 2 is a view for explaining a mask for a memory device, wherein (a)
2 is a plan view of the mask for an electron beam apparatus, and FIG.
(C) is an enlarged detailed view of a portion including the pattern block region shown in (a).

FIGS. 6A and 6B are views for explaining an electron beam apparatus mask according to Conventional Example 1, in which FIG. 6A is a plan view of the electron beam apparatus mask, and FIG. -C line sectional view, (c)
FIG. 3 is an enlarged detailed view of the pattern block area shown in FIG.

FIGS. 7A and 7B are diagrams illustrating a mask for an electron beam apparatus according to Conventional Example 2, wherein FIG. 7A is a plan view of the mask for the electron beam apparatus, and FIG. -D line sectional view, (c)
FIG. 4 is an enlarged detailed view of a portion including the pattern block area shown in FIG.

8A and 8B are diagrams illustrating an example of a mask for an electron beam device according to Conventional Example 3, in which FIG. 8A is a plan view of the mask for an electron beam device, and FIG. ee line sectional view,
(c) is an enlarged detailed view of a portion including the pattern block area shown in (a).

FIGS. 9A and 9B are views for explaining another example of an electron beam apparatus mask of Conventional Example 3, in which FIG. 9A is a plan view of the electron beam apparatus mask, and FIG. Ff line sectional view of
(c) is an enlarged detailed view of a portion including the pattern block area shown in (a).

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 thin film region 2 pattern block region 3, 3 a to 3 e pattern shape opening 4 mask support 5 interblock thin film mask support 6 second interblock thin film mask support 7 beam size correction opening 8 beam cutoff Region 9 bonded silicon substrate 10 thermal oxide film layer 11 silicon upper layer 12 first intermediate oxide film layer 13 silicon intermediate layer 14 second intermediate oxide film layer 15 silicon lower layer 16 first resist 17 nitride film layer 18 second resist 19 conductive layer Reference Signs List 20 thick film mask support between blocks 21 frame base

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-10-10706 (JP, A) JP-A-7-288223 (JP, A) JP-A-7-152150 (JP, A) JP-A-7-152 140643 (JP, A) JP-A-4-216613 (JP, A) JP-A-2-76216 (JP, A) JP-A-62-106625 (JP, A) JP-A-55-161242 (JP, A) (58) Field surveyed (Int.Cl. ⁶ , DB name) H01L 21/027 G03F 1/16

Claims (7)

(57) [Claims] 1. A pattern formed on a wafer by using an electron beam drawing method and having a pattern corresponding to the pattern in a portion formed by repeating the pattern. One of a plurality of pattern block areas in which an opening is formed is selected, and one of the pattern-shaped openings formed therein is irradiated with an electron beam to collectively draw. A plurality of patterns having the pattern-shaped openings formed therein.
Forming a thin-film mask support between blocks having a thickness larger than the thickness of the pattern-shaped opening and thinner than the thickness of the mask support, having flat portions on the front and back surfaces, around the block region. A mask for an electron beam apparatus, characterized by comprising: 2. A pattern formed on a wafer by using an electron beam drawing method and having a pattern corresponding to the pattern in a portion formed by repeating the pattern. One of a plurality of pattern block areas in which an opening is formed is selected, and one of the pattern-shaped openings formed therein is irradiated with an electron beam to collectively draw. A plurality of patterns having the pattern-shaped openings formed therein.
Forming an inter-block thin-film mask supporting portion having a thickness larger than the thickness of the pattern-shaped opening portion and smaller than the thickness of the mask supporting portion, having flat portions on the front and rear surfaces, around the unblocked region, The thickness of the mask support is larger than the thickness of the pattern-shaped opening in the beam blocking area for variable shaping in which the pattern-shaped opening is not formed in the pattern block area. A mask for an electron beam apparatus, comprising a second inter-block thin film mask support portion having a flat portion on the front and back surfaces formed thinner than the above. 3. The mask for an electron beam apparatus according to claim 1, wherein
2. A bonded silicon substrate having a five-layer structure of a silicon upper layer, a first intermediate oxide film layer, a silicon intermediate layer, a second intermediate oxide film layer, and a silicon lower layer.
Or a mask for an electron beam apparatus according to item 2. 4. A step of forming a silicon lower layer, a second intermediate oxide film layer, a silicon intermediate layer, a first intermediate oxide film layer, and a silicon upper layer in this order from below, and preparing a silicon substrate to which these are bonded. (2) a step of forming a thermal oxide film layer on the surface of the bonded silicon substrate, and (3) a step of applying a first resist on the surface of the thermal oxide film layer, exposing and developing,
(4) A resist pattern formed by the first resist
Etching the thermal oxide film layer using the mask as a mask; (5) etching the silicon upper layer after removing the first resist; and (6) forming a nitride film layer on the entire surface of the substrate. (7) applying a second resist on the back surface of the substrate, exposing and developing, and (8) etching the nitride film layer using the resist pattern formed by the second resist as a mask. (9) a step of wet-etching the silicon underlayer after removing the second resist, (10) a step of forming a nitride film layer again on the entire surface of the substrate, and (11) a step of forming a nitride film on the back surface of the substrate. Applying a second resist again, exposing and developing, and (12) etching the nitride film layer and the second intermediate oxide film layer using the resist pattern formed by the second resist as a mask. (13) the second step After removing the resist, wet etching the silicon intermediate layer, and (14) removing the nitride film layer on the entire surface of the substrate,
Forming a conductive layer on the entire surface of the substrate. 5. The method for manufacturing a mask for an electron beam apparatus according to claim 4, wherein the wet etching in the step (9) and the wet etching in the step (13) are performed with a KOH solution. . 6. The first substrate of the bonded silicon substrate.
5. The method according to claim 4, wherein the intermediate oxide film layer and the second intermediate oxide film layer serve as an etching stopper. 7. The conductive layer in the step (14),
A conductive layer for releasing electric charges accumulated in a mask for an electron beam apparatus, improving the life and strength of the mask, and reducing the influence of heat, comprising Au, W, and Ti. 5. The method of manufacturing a mask for an electronic beam apparatus according to claim 4, wherein: