JPS5710989A - Pattern manufacture for jusephson-junction element - Google Patents
Pattern manufacture for jusephson-junction elementInfo
- Publication number
- JPS5710989A JPS5710989A JP8620780A JP8620780A JPS5710989A JP S5710989 A JPS5710989 A JP S5710989A JP 8620780 A JP8620780 A JP 8620780A JP 8620780 A JP8620780 A JP 8620780A JP S5710989 A JPS5710989 A JP S5710989A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- projections
- ultraconductive
- thin films
- patterning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 4
- 229910052751 metal Inorganic materials 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 2
- 238000000059 patterning Methods 0.000 abstract 2
- 239000011347 resin Substances 0.000 abstract 2
- 229920005989 resin Polymers 0.000 abstract 2
- 238000000992 sputter etching Methods 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- 150000002739 metals Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
PURPOSE:To compose ultraconductive metal in predetermined shape by performing the etching for upper layer metal thin films for forming reverse pattern photo sensitive resin by ion milling wherein projections are formed at the metal thin films. CONSTITUTION:Photo sensitive resin layers 2 are formed on a substrate 1 and then Al layers 7 are evaporated. Next, a patterning resist having sufficiently thicker thickness compared to the necessary thickness for selective etching for the Al layers 7 is applied to form a resist pattern by exposure and development. Next, the Al layers 7 except the resist pattern is removed by leaving the Al layers 7 as it is and by ion milling without applying post baking treatment. Projections 8 are formed by re-adhesion of the Al during this process. Next, a part of patterning and spacing resists 2 is removed. And then, ultraconductive metals 3 are covered and coated on the projections 8 and the Al layers 7.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8620780A JPS5710989A (en) | 1980-06-25 | 1980-06-25 | Pattern manufacture for jusephson-junction element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8620780A JPS5710989A (en) | 1980-06-25 | 1980-06-25 | Pattern manufacture for jusephson-junction element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5710989A true JPS5710989A (en) | 1982-01-20 |
Family
ID=13880324
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8620780A Pending JPS5710989A (en) | 1980-06-25 | 1980-06-25 | Pattern manufacture for jusephson-junction element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5710989A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6233485A (en) * | 1985-08-07 | 1987-02-13 | Agency Of Ind Science & Technol | Fabrication of flat josephson junction element |
CN111200056A (en) * | 2018-11-16 | 2020-05-26 | 清华大学 | Josephson junction device and method of making the same |
-
1980
- 1980-06-25 JP JP8620780A patent/JPS5710989A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6233485A (en) * | 1985-08-07 | 1987-02-13 | Agency Of Ind Science & Technol | Fabrication of flat josephson junction element |
JPH0513395B2 (en) * | 1985-08-07 | 1993-02-22 | Kogyo Gijutsuin | |
CN111200056A (en) * | 2018-11-16 | 2020-05-26 | 清华大学 | Josephson junction device and method of making the same |
CN111200056B (en) * | 2018-11-16 | 2022-03-08 | 清华大学 | Josephson junction device and method of making the same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5748237A (en) | Manufacture of 2n doubling pattern | |
JPS5710989A (en) | Pattern manufacture for jusephson-junction element | |
JPS5623783A (en) | Formation of electrode for semiconductor device | |
JPS54155771A (en) | Pattern forming method | |
JPS57183037A (en) | Formation of pattern | |
JPS5680130A (en) | Manufacture of semiconductor device | |
JPS5610930A (en) | Manufacture of semiconductor device | |
JPS5687343A (en) | Forming method of wiring | |
JPH0348498B2 (en) | ||
FR2337358A1 (en) | Thin films for magnetic or semiconductor structures - where masks with profiled edges produce films with small dimensions | |
JPS5632143A (en) | Manufacture of photomask | |
JPS5448485A (en) | Photo etching method | |
JPS6132718A (en) | Preparation of mold for molding synthetic resin | |
JPS54158183A (en) | Manufacture of semiconductor device | |
JPS5691434A (en) | Method for forming pattern of deposited film by lift-off method | |
JPS6267546A (en) | Manufacture of flexible mask | |
JPS59155930A (en) | Forming method of minute pattern | |
JPS54134036A (en) | Manufacture of perforated plated product | |
JPS55118635A (en) | Method of forming pattern | |
JPS54162462A (en) | Semiconductor device and its manufacture | |
JPS56115534A (en) | Formation of pattern | |
JPS57118641A (en) | Lifting-off method | |
JPS57153435A (en) | Manufacture of semiconductor device | |
JPS5724539A (en) | Formation of pattern | |
JPS5735860A (en) | Preparation of photomask |