JPS5448485A - Photo etching method - Google Patents

Photo etching method

Info

Publication number
JPS5448485A
JPS5448485A JP11459577A JP11459577A JPS5448485A JP S5448485 A JPS5448485 A JP S5448485A JP 11459577 A JP11459577 A JP 11459577A JP 11459577 A JP11459577 A JP 11459577A JP S5448485 A JPS5448485 A JP S5448485A
Authority
JP
Japan
Prior art keywords
film
minutes
plier
photo etching
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11459577A
Other languages
Japanese (ja)
Other versions
JPS6026294B2 (en
Inventor
Ryoichi Ono
Kazuo Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP52114595A priority Critical patent/JPS6026294B2/en
Publication of JPS5448485A publication Critical patent/JPS5448485A/en
Publication of JPS6026294B2 publication Critical patent/JPS6026294B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To enable the formation of fine pattern, by reducing the amount of side etching, through the addition of silance system plier for the positive type photo resist used, when photo etching the Al wiring film coated via the insulation film on the semicnductor substrate. CONSTITUTION:The field insulation film 2 is coated on the surface of the semiconductor substrate 1, the Al wiring film 3 is formed on it, and photo etching mask is made by providing the positive type photo resist film 4. In this case, silane system plier 8% is contained to the resist film 3, and the unnecessary part of the film 4 is removed by performing the exposure and developemtn after prebaking for 30 minutes at 90 deg.C. After that, the film 4 left is hardened with post baking, but this process is divided twice. That is, heat treatment for about 30 minutes at 150 deg.C is made, and heat treatment for about 30 minutes is made at 190 to 240 deg.C. Thus, the heat resistant of the film 4 is increased, the bondingness of the films 3 and 4 is strengthened, and fine pattern formation is made suitable.
JP52114595A 1977-09-26 1977-09-26 Photo etching method Expired JPS6026294B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52114595A JPS6026294B2 (en) 1977-09-26 1977-09-26 Photo etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52114595A JPS6026294B2 (en) 1977-09-26 1977-09-26 Photo etching method

Publications (2)

Publication Number Publication Date
JPS5448485A true JPS5448485A (en) 1979-04-17
JPS6026294B2 JPS6026294B2 (en) 1985-06-22

Family

ID=14641783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52114595A Expired JPS6026294B2 (en) 1977-09-26 1977-09-26 Photo etching method

Country Status (1)

Country Link
JP (1) JPS6026294B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844720A (en) * 1981-07-15 1983-03-15 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン Method of forming open pattern
JPS5844715A (en) * 1981-09-11 1983-03-15 Fujitsu Ltd Forming method for minute pattern
JPS61271834A (en) * 1985-05-27 1986-12-02 Toshiba Corp Formation of resist pattern

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844720A (en) * 1981-07-15 1983-03-15 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン Method of forming open pattern
JPS6357941B2 (en) * 1981-07-15 1988-11-14 Intaanashonaru Bijinesu Mashiinzu Corp
JPS5844715A (en) * 1981-09-11 1983-03-15 Fujitsu Ltd Forming method for minute pattern
JPH0143450B2 (en) * 1981-09-11 1989-09-20 Fujitsu Ltd
JPS61271834A (en) * 1985-05-27 1986-12-02 Toshiba Corp Formation of resist pattern

Also Published As

Publication number Publication date
JPS6026294B2 (en) 1985-06-22

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