JPS5570028A - Fabricating method of semiconductor device - Google Patents

Fabricating method of semiconductor device

Info

Publication number
JPS5570028A
JPS5570028A JP14364378A JP14364378A JPS5570028A JP S5570028 A JPS5570028 A JP S5570028A JP 14364378 A JP14364378 A JP 14364378A JP 14364378 A JP14364378 A JP 14364378A JP S5570028 A JPS5570028 A JP S5570028A
Authority
JP
Japan
Prior art keywords
pattern
film
substrate
photo resist
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14364378A
Other languages
Japanese (ja)
Other versions
JPS6255693B2 (en
Inventor
Kazuya Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14364378A priority Critical patent/JPS5570028A/en
Priority to US06/047,241 priority patent/US4253888A/en
Publication of JPS5570028A publication Critical patent/JPS5570028A/en
Publication of JPS6255693B2 publication Critical patent/JPS6255693B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To accurately form a fine pattern of thick conductive film on a substrate in high yield by depositing the conductive film on the entire photo resist pattern surface after hardening the photo resist pattern surface, foaming the photo resist pattern and using the foamed pattern as a lift-off agent.
CONSTITUTION: A photo resist pattern 12 is formed on a substrate 10 formed with a SiO2 film 11 by means of photolithographic process and thermally treated in gas plasma such as N2, CF4 or the like to thereby enhance the adherence between the pattern 12' and the SiO2 film. After hardening the surface layer 12 of the pattern 12', an aluminum film 14 is deposited on the entire substrate 10. Then, the substrate is thermally treated at higher temperature (such as 200W400°C) than that at plasma treating time and aluminium depositing time to thereby enhance the adherence between the aluminum film and the SiO2 film. After pin-hole is produced at the aluminum film 14' of the pattern 12' and the side 15 of the pattern 12' is particularly exposed, the pattern 12' is removed to form the aluminum pattern 16.
COPYRIGHT: (C)1980,JPO&Japio
JP14364378A 1978-06-16 1978-11-20 Fabricating method of semiconductor device Granted JPS5570028A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP14364378A JPS5570028A (en) 1978-11-20 1978-11-20 Fabricating method of semiconductor device
US06/047,241 US4253888A (en) 1978-06-16 1979-06-11 Pretreatment of photoresist masking layers resulting in higher temperature device processing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14364378A JPS5570028A (en) 1978-11-20 1978-11-20 Fabricating method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5570028A true JPS5570028A (en) 1980-05-27
JPS6255693B2 JPS6255693B2 (en) 1987-11-20

Family

ID=15343543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14364378A Granted JPS5570028A (en) 1978-06-16 1978-11-20 Fabricating method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5570028A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0258834A (en) * 1988-07-21 1990-02-28 Samsung Electron Co Ltd Lift-off process using by-product
JPH04278536A (en) * 1991-03-06 1992-10-05 Fujitsu Ltd Manufacture of semiconductor element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5346281A (en) * 1976-10-08 1978-04-25 Matsushita Electric Ind Co Ltd Mask for semiconductor device and production of semiconductor device using the same
JPS5373073A (en) * 1976-12-11 1978-06-29 Fujitsu Ltd Treatment method for photo resist

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5346281A (en) * 1976-10-08 1978-04-25 Matsushita Electric Ind Co Ltd Mask for semiconductor device and production of semiconductor device using the same
JPS5373073A (en) * 1976-12-11 1978-06-29 Fujitsu Ltd Treatment method for photo resist

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0258834A (en) * 1988-07-21 1990-02-28 Samsung Electron Co Ltd Lift-off process using by-product
JPH04278536A (en) * 1991-03-06 1992-10-05 Fujitsu Ltd Manufacture of semiconductor element

Also Published As

Publication number Publication date
JPS6255693B2 (en) 1987-11-20

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