JPS5496369A - Mask forming method - Google Patents

Mask forming method

Info

Publication number
JPS5496369A
JPS5496369A JP312978A JP312978A JPS5496369A JP S5496369 A JPS5496369 A JP S5496369A JP 312978 A JP312978 A JP 312978A JP 312978 A JP312978 A JP 312978A JP S5496369 A JPS5496369 A JP S5496369A
Authority
JP
Japan
Prior art keywords
film
resist
etching
metal ion
forming method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP312978A
Other languages
Japanese (ja)
Other versions
JPS5910055B2 (en
Inventor
Hidefumi Nakada
Yaichiro Watakabe
Tadao Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP53003129A priority Critical patent/JPS5910055B2/en
Publication of JPS5496369A publication Critical patent/JPS5496369A/en
Publication of JPS5910055B2 publication Critical patent/JPS5910055B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE: To simplify the mask formation by injecting the metal ion of W, Mo and the like into the Cr or Cr2O3 film covered with the resist film and then giving the inverse etching to the area coated with the resist.
CONSTITUTION: Cr film 2 and resist 3 are laminated on glass plate 1 to form a pattern through the exposure and development. Then the metal ion of W, Mo, iron, copper and the like is injected about several tens Å onto the surface of film 2. After this, resist 3 is removed, and film 2 is etched through the plasma etching with use of the mixture gas of the halogen element and O2. Thus, region 2a with no ion injection given is removed selectively. With this method, the etching is reduced for the side surface and the minute processing can be given even to the resist featuring a large amount of film reduction. As a result, the removing process of the resist film can be omitted.
COPYRIGHT: (C)1979,JPO&Japio
JP53003129A 1978-01-13 1978-01-13 Mask making method Expired JPS5910055B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53003129A JPS5910055B2 (en) 1978-01-13 1978-01-13 Mask making method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53003129A JPS5910055B2 (en) 1978-01-13 1978-01-13 Mask making method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58221102A Division JPS6018139B2 (en) 1983-11-22 1983-11-22 Mask making method

Publications (2)

Publication Number Publication Date
JPS5496369A true JPS5496369A (en) 1979-07-30
JPS5910055B2 JPS5910055B2 (en) 1984-03-06

Family

ID=11548740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53003129A Expired JPS5910055B2 (en) 1978-01-13 1978-01-13 Mask making method

Country Status (1)

Country Link
JP (1) JPS5910055B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950528A (en) * 1982-09-14 1984-03-23 Nippon Telegr & Teleph Corp <Ntt> Formation of minute pattern
JPS6358446A (en) * 1986-08-29 1988-03-14 Hoya Corp Pattern forming method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950528A (en) * 1982-09-14 1984-03-23 Nippon Telegr & Teleph Corp <Ntt> Formation of minute pattern
JPS6358446A (en) * 1986-08-29 1988-03-14 Hoya Corp Pattern forming method

Also Published As

Publication number Publication date
JPS5910055B2 (en) 1984-03-06

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