JPS5651582A - Gas etching method - Google Patents

Gas etching method

Info

Publication number
JPS5651582A
JPS5651582A JP12754179A JP12754179A JPS5651582A JP S5651582 A JPS5651582 A JP S5651582A JP 12754179 A JP12754179 A JP 12754179A JP 12754179 A JP12754179 A JP 12754179A JP S5651582 A JPS5651582 A JP S5651582A
Authority
JP
Japan
Prior art keywords
etching
photomask blank
aperture
forming plates
central part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12754179A
Other languages
Japanese (ja)
Inventor
Mitsuru Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12754179A priority Critical patent/JPS5651582A/en
Publication of JPS5651582A publication Critical patent/JPS5651582A/en
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To perform the uniform etching corresponding to predetermined patterns by covering the surface to be etched having been covered with a mask with aperture forming plates and performing etching locally or progressing the same gradually from local to the entire part of the etching surface.
CONSTITUTION: In a gas etching apparatus, a photomask blank 3 is covered with aperture forming plates 4 made of an etching-resistant material to form an aperture opposing only to the central part of the photomask blank 3. The central part is lightly etched locally, and the aperture is gradually expanded by gradually moving the aperture forming plates 4 in the arrow directions so that in the final the entire part of the photomask blank 3 is exposed into the plasma. Thereby, the differences in etching rate between the peripheral part and central part of the photomask blank 3 are eliminated and the uniform etching patterns may be obtained.
COPYRIGHT: (C)1981,JPO&Japio
JP12754179A 1979-10-01 1979-10-01 Gas etching method Pending JPS5651582A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12754179A JPS5651582A (en) 1979-10-01 1979-10-01 Gas etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12754179A JPS5651582A (en) 1979-10-01 1979-10-01 Gas etching method

Publications (1)

Publication Number Publication Date
JPS5651582A true JPS5651582A (en) 1981-05-09

Family

ID=14962555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12754179A Pending JPS5651582A (en) 1979-10-01 1979-10-01 Gas etching method

Country Status (1)

Country Link
JP (1) JPS5651582A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6138932U (en) * 1984-08-09 1986-03-11 東京エレクトロン相模株式会社 Etsuchi tunnel of Batutchi plasma equipment
JP2012074533A (en) * 2010-09-29 2012-04-12 Toppan Printing Co Ltd Dry etching device, dry etching method and manufacturing method of photomask

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6138932U (en) * 1984-08-09 1986-03-11 東京エレクトロン相模株式会社 Etsuchi tunnel of Batutchi plasma equipment
JP2012074533A (en) * 2010-09-29 2012-04-12 Toppan Printing Co Ltd Dry etching device, dry etching method and manufacturing method of photomask

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