JPS5412674A - Mask pattern formation method for semiconductor device - Google Patents
Mask pattern formation method for semiconductor deviceInfo
- Publication number
- JPS5412674A JPS5412674A JP7805177A JP7805177A JPS5412674A JP S5412674 A JPS5412674 A JP S5412674A JP 7805177 A JP7805177 A JP 7805177A JP 7805177 A JP7805177 A JP 7805177A JP S5412674 A JPS5412674 A JP S5412674A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- mask pattern
- formation method
- pattern formation
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
PURPOSE: To increase the adhesion between the original plate and the substrate as well as the transcription accuracy, by forming a decompression part near the center of the substrate to which the constant pressure of the gas is applied and then shifting sequentially the decompression part toward the circumference part.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7805177A JPS5412674A (en) | 1977-06-30 | 1977-06-30 | Mask pattern formation method for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7805177A JPS5412674A (en) | 1977-06-30 | 1977-06-30 | Mask pattern formation method for semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5412674A true JPS5412674A (en) | 1979-01-30 |
JPS5541528B2 JPS5541528B2 (en) | 1980-10-24 |
Family
ID=13651040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7805177A Granted JPS5412674A (en) | 1977-06-30 | 1977-06-30 | Mask pattern formation method for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5412674A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5689744A (en) * | 1979-12-24 | 1981-07-21 | Fujitsu Ltd | X-ray transfer device |
US4522907A (en) * | 1979-11-14 | 1985-06-11 | Canon Kabushiki Kaisha | Method for developing latent images using resin donor member |
-
1977
- 1977-06-30 JP JP7805177A patent/JPS5412674A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4522907A (en) * | 1979-11-14 | 1985-06-11 | Canon Kabushiki Kaisha | Method for developing latent images using resin donor member |
JPS5689744A (en) * | 1979-12-24 | 1981-07-21 | Fujitsu Ltd | X-ray transfer device |
Also Published As
Publication number | Publication date |
---|---|
JPS5541528B2 (en) | 1980-10-24 |
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