JPS5412674A - Mask pattern formation method for semiconductor device - Google Patents

Mask pattern formation method for semiconductor device

Info

Publication number
JPS5412674A
JPS5412674A JP7805177A JP7805177A JPS5412674A JP S5412674 A JPS5412674 A JP S5412674A JP 7805177 A JP7805177 A JP 7805177A JP 7805177 A JP7805177 A JP 7805177A JP S5412674 A JPS5412674 A JP S5412674A
Authority
JP
Japan
Prior art keywords
semiconductor device
mask pattern
formation method
pattern formation
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7805177A
Other languages
Japanese (ja)
Other versions
JPS5541528B2 (en
Inventor
Keiichi Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7805177A priority Critical patent/JPS5412674A/en
Publication of JPS5412674A publication Critical patent/JPS5412674A/en
Publication of JPS5541528B2 publication Critical patent/JPS5541528B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: To increase the adhesion between the original plate and the substrate as well as the transcription accuracy, by forming a decompression part near the center of the substrate to which the constant pressure of the gas is applied and then shifting sequentially the decompression part toward the circumference part.
COPYRIGHT: (C)1979,JPO&Japio
JP7805177A 1977-06-30 1977-06-30 Mask pattern formation method for semiconductor device Granted JPS5412674A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7805177A JPS5412674A (en) 1977-06-30 1977-06-30 Mask pattern formation method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7805177A JPS5412674A (en) 1977-06-30 1977-06-30 Mask pattern formation method for semiconductor device

Publications (2)

Publication Number Publication Date
JPS5412674A true JPS5412674A (en) 1979-01-30
JPS5541528B2 JPS5541528B2 (en) 1980-10-24

Family

ID=13651040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7805177A Granted JPS5412674A (en) 1977-06-30 1977-06-30 Mask pattern formation method for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5412674A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5689744A (en) * 1979-12-24 1981-07-21 Fujitsu Ltd X-ray transfer device
US4522907A (en) * 1979-11-14 1985-06-11 Canon Kabushiki Kaisha Method for developing latent images using resin donor member

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4522907A (en) * 1979-11-14 1985-06-11 Canon Kabushiki Kaisha Method for developing latent images using resin donor member
JPS5689744A (en) * 1979-12-24 1981-07-21 Fujitsu Ltd X-ray transfer device

Also Published As

Publication number Publication date
JPS5541528B2 (en) 1980-10-24

Similar Documents

Publication Publication Date Title
JPS52155420A (en) Gas enclosing method for enclosing type cylinder
JPS5326505A (en) Voice rec ognizing device
JPS5225651A (en) Process for fabricating an optical curved surface using a photopolymer izable adhesive
JPS5211774A (en) Method of detecting relative position of patterns
JPS53110374A (en) Manufacture of semiconductor device
JPS5412674A (en) Mask pattern formation method for semiconductor device
JPS51136289A (en) Semi-conductor producing
JPS5425169A (en) Matching method for photo mask against semiconductor wafer
JPS53128278A (en) Production of lsi mask
JPS5321574A (en) Contact and separation method of photo mask
JPS543473A (en) Manufacture of semiconductor device
JPS5387668A (en) Forming method of patterns
JPS53112671A (en) Forming method for pattern
JPS526480A (en) Production process of semiconductor unit
JPS5279654A (en) Production of semiconductor device
JPS5347774A (en) Production of semiconductor device
JPS523935A (en) Process for checking overflow of carbreator
JPS5386177A (en) Production of semiconductor device
JPS5384477A (en) Forming method of dry etching mask
JPS53105982A (en) Micropattern formation method
JPS5241327A (en) Method of and apparatus for remote-controlling internal pressure of pn eumatic tyre installed on ...
JPS5321573A (en) Etching method
JPS5315074A (en) Mask alignment method
JPS542670A (en) Plasma etching method
JPS52127174A (en) Minute patern formation method