JPS5347774A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5347774A
JPS5347774A JP12311476A JP12311476A JPS5347774A JP S5347774 A JPS5347774 A JP S5347774A JP 12311476 A JP12311476 A JP 12311476A JP 12311476 A JP12311476 A JP 12311476A JP S5347774 A JPS5347774 A JP S5347774A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
film
plasmas
hardening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12311476A
Other languages
Japanese (ja)
Other versions
JPS6011458B2 (en
Inventor
Chuichi Takada
Ryoji Abe
Makoto Serigano
Yorihiro Uchiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12311476A priority Critical patent/JPS6011458B2/en
Publication of JPS5347774A publication Critical patent/JPS5347774A/en
Publication of JPS6011458B2 publication Critical patent/JPS6011458B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To make desired patterns by hardening Si resin film, then radiating O2 plasmas to convert the film to a SiO2 film then etching it off.
COPYRIGHT: (C)1978,JPO&Japio
JP12311476A 1976-10-14 1976-10-14 Manufacturing method of semiconductor device Expired JPS6011458B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12311476A JPS6011458B2 (en) 1976-10-14 1976-10-14 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12311476A JPS6011458B2 (en) 1976-10-14 1976-10-14 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5347774A true JPS5347774A (en) 1978-04-28
JPS6011458B2 JPS6011458B2 (en) 1985-03-26

Family

ID=14852515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12311476A Expired JPS6011458B2 (en) 1976-10-14 1976-10-14 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6011458B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62183531A (en) * 1986-02-07 1987-08-11 Nippon Telegr & Teleph Corp <Ntt> Formation of flattend film by etching
JPS62253780A (en) * 1986-04-28 1987-11-05 Nippon Kokan Kk <Nkk> Manufacture of hot dip galvanized steel sheet having high corrosion resistance
US8034456B2 (en) 2006-06-23 2011-10-11 Nippon Steel Corporation Surface-treated metal material and metal surface treatment agent

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62183531A (en) * 1986-02-07 1987-08-11 Nippon Telegr & Teleph Corp <Ntt> Formation of flattend film by etching
JPS62253780A (en) * 1986-04-28 1987-11-05 Nippon Kokan Kk <Nkk> Manufacture of hot dip galvanized steel sheet having high corrosion resistance
US8034456B2 (en) 2006-06-23 2011-10-11 Nippon Steel Corporation Surface-treated metal material and metal surface treatment agent

Also Published As

Publication number Publication date
JPS6011458B2 (en) 1985-03-26

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