JPS5570027A - Manufacture of semicondcutor device - Google Patents

Manufacture of semicondcutor device

Info

Publication number
JPS5570027A
JPS5570027A JP14364178A JP14364178A JPS5570027A JP S5570027 A JPS5570027 A JP S5570027A JP 14364178 A JP14364178 A JP 14364178A JP 14364178 A JP14364178 A JP 14364178A JP S5570027 A JPS5570027 A JP S5570027A
Authority
JP
Japan
Prior art keywords
pattern
film
poly
photoresist
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14364178A
Other languages
Japanese (ja)
Inventor
Kazuya Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14364178A priority Critical patent/JPS5570027A/en
Priority to US06/047,241 priority patent/US4253888A/en
Publication of JPS5570027A publication Critical patent/JPS5570027A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To form a thick multicrystal silicon film in a self-adjusting, accurate and efficient way by forming multicrystal silicon film aften hardening organic compound pattern surface of the substrate and by removing organic compound pattern.
CONSTITUTION: Photoresist pattern 13 such as photosensitive resin is formed on the substrate where SiO2 film 12 is formed by means of photolithographic technology, and at least the surface of the pattern 13 is hardened and carbonized through 180W 400°C heat treatment in CF4 plasma. Then, poly-Si film 14 is piled by means of CVD method. This film 14 is thin on the side of pattern 13 and has many pin holes on the upper portion 14' of the pattern 13. A photoresist patterm 15 is formed on the poly-Si film 14. After removing photoresist patterns 13 and 15, poly-Si film 14' is removed by CF4 plasma or etching to form poly-Si pattern 16 conforming accurately to the intervals of pattern 13. As a method for removal of poly-Si film 14', lift-off by removal of pattern 13 is also possible.
COPYRIGHT: (C)1980,JPO&Japio
JP14364178A 1978-06-16 1978-11-20 Manufacture of semicondcutor device Pending JPS5570027A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP14364178A JPS5570027A (en) 1978-11-20 1978-11-20 Manufacture of semicondcutor device
US06/047,241 US4253888A (en) 1978-06-16 1979-06-11 Pretreatment of photoresist masking layers resulting in higher temperature device processing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14364178A JPS5570027A (en) 1978-11-20 1978-11-20 Manufacture of semicondcutor device

Publications (1)

Publication Number Publication Date
JPS5570027A true JPS5570027A (en) 1980-05-27

Family

ID=15343492

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14364178A Pending JPS5570027A (en) 1978-06-16 1978-11-20 Manufacture of semicondcutor device

Country Status (1)

Country Link
JP (1) JPS5570027A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014535158A (en) * 2011-09-30 2014-12-25 コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ Method for structuring an active organic layer deposited on a substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014535158A (en) * 2011-09-30 2014-12-25 コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ Method for structuring an active organic layer deposited on a substrate

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