JPS55108740A - Amending method for pattern of mask or wafer - Google Patents

Amending method for pattern of mask or wafer

Info

Publication number
JPS55108740A
JPS55108740A JP1561079A JP1561079A JPS55108740A JP S55108740 A JPS55108740 A JP S55108740A JP 1561079 A JP1561079 A JP 1561079A JP 1561079 A JP1561079 A JP 1561079A JP S55108740 A JPS55108740 A JP S55108740A
Authority
JP
Japan
Prior art keywords
mask
pattern
abnormal
exposure
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1561079A
Other languages
Japanese (ja)
Inventor
Mikio Osada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1561079A priority Critical patent/JPS55108740A/en
Publication of JPS55108740A publication Critical patent/JPS55108740A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE: To eliminate or amend an abnormal spot pattern on a mask or a wafer in a short time by photoetching based on the step and repeat method, in which a reticle for amendment is used.
CONSTITUTION: After measuring the size and position of an abnormal spot pattern on a master mask, positive resist is coated on the whole surface of the mask. A reticle 6 which is made by forming an exposure window 4 on a metal thin film layer 5 is used. The exposure window 4 is bigger than an abnormal pattern 3 and has such a size as not cause any influence on the mask pattern 1. For poor mask, by referring to the position of the abnormal pattern, the step and repeat method is used for exposure and developing etching to eliminate the abnormal pattern. As the result, the time required for exposure is shorten because the step and repeat method is employed.
COPYRIGHT: (C)1980,JPO&Japio
JP1561079A 1979-02-13 1979-02-13 Amending method for pattern of mask or wafer Pending JPS55108740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1561079A JPS55108740A (en) 1979-02-13 1979-02-13 Amending method for pattern of mask or wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1561079A JPS55108740A (en) 1979-02-13 1979-02-13 Amending method for pattern of mask or wafer

Publications (1)

Publication Number Publication Date
JPS55108740A true JPS55108740A (en) 1980-08-21

Family

ID=11893468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1561079A Pending JPS55108740A (en) 1979-02-13 1979-02-13 Amending method for pattern of mask or wafer

Country Status (1)

Country Link
JP (1) JPS55108740A (en)

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