JPS57118640A - Formation of masking pattern - Google Patents

Formation of masking pattern

Info

Publication number
JPS57118640A
JPS57118640A JP528581A JP528581A JPS57118640A JP S57118640 A JPS57118640 A JP S57118640A JP 528581 A JP528581 A JP 528581A JP 528581 A JP528581 A JP 528581A JP S57118640 A JPS57118640 A JP S57118640A
Authority
JP
Japan
Prior art keywords
resist
resist layer
dry
masking pattern
etching speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP528581A
Other languages
Japanese (ja)
Inventor
Tatsuhiko Yamao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP528581A priority Critical patent/JPS57118640A/en
Publication of JPS57118640A publication Critical patent/JPS57118640A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To avoid the masking pattern defect caused by the remain of resist after developing by a method wherein two types of resists which have different dry-etching speed each other are applied in double layers. CONSTITUTION:Electron beam positive resist film 3 of approximately 2,000Angstrom thickness which has faster dry-etching speed is applied on thin film 2 of metal such as crome formed on a quartz substrate 1. Then positive resist 4 of 5,000Angstrom thickness which has slower dry-etching speed such as AZ-1350 is applied on the first resist layer 3. If the first resist layer 3 is developed after the second resist layer 4 is exposed to electron beam and developed, the undeveloped remain of the second resist layer is also removed and the first resist layer is completely removed by dry-etching that follows. Then the crome is etched by gas plasma such as carbon tetrachloride and the resist is removed, so that the masking pattern is formed.
JP528581A 1981-01-16 1981-01-16 Formation of masking pattern Pending JPS57118640A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP528581A JPS57118640A (en) 1981-01-16 1981-01-16 Formation of masking pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP528581A JPS57118640A (en) 1981-01-16 1981-01-16 Formation of masking pattern

Publications (1)

Publication Number Publication Date
JPS57118640A true JPS57118640A (en) 1982-07-23

Family

ID=11606963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP528581A Pending JPS57118640A (en) 1981-01-16 1981-01-16 Formation of masking pattern

Country Status (1)

Country Link
JP (1) JPS57118640A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198825A (en) * 1984-03-23 1985-10-08 Nippon Telegr & Teleph Corp <Ntt> Formation of extremely fine pattern

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198825A (en) * 1984-03-23 1985-10-08 Nippon Telegr & Teleph Corp <Ntt> Formation of extremely fine pattern
JPH0438133B2 (en) * 1984-03-23 1992-06-23 Nippon Telegraph & Telephone

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