JPS55143560A - Manufacture of photomask - Google Patents

Manufacture of photomask

Info

Publication number
JPS55143560A
JPS55143560A JP5182479A JP5182479A JPS55143560A JP S55143560 A JPS55143560 A JP S55143560A JP 5182479 A JP5182479 A JP 5182479A JP 5182479 A JP5182479 A JP 5182479A JP S55143560 A JPS55143560 A JP S55143560A
Authority
JP
Japan
Prior art keywords
film
etching
pattern
lsi
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5182479A
Other languages
Japanese (ja)
Other versions
JPS62493B2 (en
Inventor
Teruhiko Yamazaki
Yoshimare Suzuki
Jun Uno
Yaichiro Watakabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5182479A priority Critical patent/JPS55143560A/en
Publication of JPS55143560A publication Critical patent/JPS55143560A/en
Publication of JPS62493B2 publication Critical patent/JPS62493B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To obtain a photomask of high accuracy for LSI, etc. by forming a film of a specified metal and a film of the metal oxide on a glass substrate; coating a polymer resist; forming a pattern by applying electron beams or the like; and carrying out specified etching. CONSTITUTION:Cr film 12 and chromium oxide film 13 are formed on glass substrate 11 by sputtering or other method, and photoresist or electron beam resist film 14 is coated. The films are then exposed to light or electron beams through a pattern for LSI or the like and developed to form opening portion 15, thus obtaining a resist pattern. After baking to improve the adhesive properties of films 13, 14, exposed film 13 is removed by etching with mixed gas plasma of halogen type gas such as Cl2 and CO, NO, H2 or the like. Film 13 is then removed by etching with O2 plasma or the like, and film 12 is removed by etching with mixed gas plasma contg. Cl2 and O2 to obtain desired mask E.
JP5182479A 1979-04-26 1979-04-26 Manufacture of photomask Granted JPS55143560A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5182479A JPS55143560A (en) 1979-04-26 1979-04-26 Manufacture of photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5182479A JPS55143560A (en) 1979-04-26 1979-04-26 Manufacture of photomask

Publications (2)

Publication Number Publication Date
JPS55143560A true JPS55143560A (en) 1980-11-08
JPS62493B2 JPS62493B2 (en) 1987-01-08

Family

ID=12897630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5182479A Granted JPS55143560A (en) 1979-04-26 1979-04-26 Manufacture of photomask

Country Status (1)

Country Link
JP (1) JPS55143560A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55144245A (en) * 1979-04-27 1980-11-11 Mitsubishi Electric Corp Manufacture of photomask
US5302236A (en) * 1990-10-19 1994-04-12 Tokyo Electron Limited Method of etching object to be processed including oxide or nitride portion
US6309976B1 (en) * 1999-03-22 2001-10-30 Taiwan Semiconductor Manufacturing Company Critical dimension controlled method of plasma descum for conventional quarter micron and smaller dimension binary mask manufacture
DE10146935A1 (en) * 2001-09-24 2003-04-17 Infineon Technologies Ag Processing of photolithographic reticle for integrated circuit, involves passing specific gas to chamber having reticle with photomask and patterned resist, generating plasma and removing exposed portions of photomask

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55144245A (en) * 1979-04-27 1980-11-11 Mitsubishi Electric Corp Manufacture of photomask
US5302236A (en) * 1990-10-19 1994-04-12 Tokyo Electron Limited Method of etching object to be processed including oxide or nitride portion
US6309976B1 (en) * 1999-03-22 2001-10-30 Taiwan Semiconductor Manufacturing Company Critical dimension controlled method of plasma descum for conventional quarter micron and smaller dimension binary mask manufacture
DE10146935A1 (en) * 2001-09-24 2003-04-17 Infineon Technologies Ag Processing of photolithographic reticle for integrated circuit, involves passing specific gas to chamber having reticle with photomask and patterned resist, generating plasma and removing exposed portions of photomask

Also Published As

Publication number Publication date
JPS62493B2 (en) 1987-01-08

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