JPS5740933A - Lift off method - Google Patents

Lift off method

Info

Publication number
JPS5740933A
JPS5740933A JP55116646A JP11664680A JPS5740933A JP S5740933 A JPS5740933 A JP S5740933A JP 55116646 A JP55116646 A JP 55116646A JP 11664680 A JP11664680 A JP 11664680A JP S5740933 A JPS5740933 A JP S5740933A
Authority
JP
Japan
Prior art keywords
film
coated
chrome
resist film
mask pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55116646A
Other languages
Japanese (ja)
Inventor
Satoshi Araihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55116646A priority Critical patent/JPS5740933A/en
Publication of JPS5740933A publication Critical patent/JPS5740933A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof

Abstract

PURPOSE:To form a highly precise photomask by a method wherein a resist film having a negative pattern is formed on a substrate and after coating a thin oxide film on the whole surface, a desired film material is coated on the thin oxide film and then the resist film is removed. CONSTITUTION:A positive resist film of 5,000Angstrom thickness is applied on a transparent glass substrate 1, exposed and developed by irrdiating an electron beam and desired mask pattern and the negative pattern 2 for desired mask pattern is formed. This substrate is inserted in a plasma sputtering device and a chrome oxide film 4 of 10Angstrom is coated in oxygenous plasma. Then, changing over to an Ar gas from the oxygenous plasma, a Cr film 5 of 500Angstrom is coated on the oxidized Cr film. The resist film 2 is removed and chrome mask having a chrome film is formed. Through these procedures, a CrOX film is used as a buffer layer for thermal and mechanical stress and the highly precise mask pattern without exforiation and cracks can be formed.
JP55116646A 1980-08-25 1980-08-25 Lift off method Pending JPS5740933A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55116646A JPS5740933A (en) 1980-08-25 1980-08-25 Lift off method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55116646A JPS5740933A (en) 1980-08-25 1980-08-25 Lift off method

Publications (1)

Publication Number Publication Date
JPS5740933A true JPS5740933A (en) 1982-03-06

Family

ID=14692367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55116646A Pending JPS5740933A (en) 1980-08-25 1980-08-25 Lift off method

Country Status (1)

Country Link
JP (1) JPS5740933A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6914003B2 (en) 2002-05-29 2005-07-05 Hynix Semiconductor Inc. Method for manufacturing magnetic random access memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6914003B2 (en) 2002-05-29 2005-07-05 Hynix Semiconductor Inc. Method for manufacturing magnetic random access memory

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