JPS57161857A - Photomask blank plate - Google Patents
Photomask blank plateInfo
- Publication number
- JPS57161857A JPS57161857A JP4792381A JP4792381A JPS57161857A JP S57161857 A JPS57161857 A JP S57161857A JP 4792381 A JP4792381 A JP 4792381A JP 4792381 A JP4792381 A JP 4792381A JP S57161857 A JPS57161857 A JP S57161857A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- tantalum
- glass
- thin
- photomask blank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
PURPOSE:To form a multilayer tantalum mask high in precision and durability, by laminating a thin film consisting mainly of tantalum nitride and oxide on a tantalum film. CONSTITUTION:A photomask blank plate 4 is made by forming a usually 50- 100nm thin tantalum film layer 2, and further on this layer, a usually 20-40nm thin layer 3 consisting mainly of tantalum oxide and nitride as a reflection- preventing layer on a transparent substrate 1 made of a surface-fully-polished soad lime glass, borosilicate glass, quartz glass, sapphire glass, or the like. The layer 3 is prepared by the reactive sputtering process using an N2 and O2 atmosphere, and the laminate layer 4 consisting of the layers 2, 3 is formed into a pattern.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4792381A JPS57161857A (en) | 1981-03-31 | 1981-03-31 | Photomask blank plate |
EP81109440A EP0054736B1 (en) | 1980-12-22 | 1981-10-30 | Photomask and photomask blank |
DE8181109440T DE3170637D1 (en) | 1980-12-22 | 1981-10-30 | Photomask and photomask blank |
US06/319,962 US4374912A (en) | 1981-03-31 | 1981-11-10 | Photomask and photomask blank |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4792381A JPS57161857A (en) | 1981-03-31 | 1981-03-31 | Photomask blank plate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57161857A true JPS57161857A (en) | 1982-10-05 |
JPS6251461B2 JPS6251461B2 (en) | 1987-10-30 |
Family
ID=12788884
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4792381A Granted JPS57161857A (en) | 1980-12-22 | 1981-03-31 | Photomask blank plate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57161857A (en) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6280656A (en) * | 1985-10-04 | 1987-04-14 | Toppan Printing Co Ltd | Photomask blank and photomask |
JP2002246299A (en) * | 2001-02-20 | 2002-08-30 | Oki Electric Ind Co Ltd | Reflecting type exposure mask, its manufacturing method and semiconductor element |
JP2004361507A (en) * | 2003-06-02 | 2004-12-24 | Renesas Technology Corp | Method for manufacturing photomask and photomask drawing system |
DE102009010855A1 (en) | 2008-02-27 | 2009-10-15 | Hoya Corp. | Photomask blank, photomask, and method of making a photomask |
DE102009010854A1 (en) | 2008-02-27 | 2009-10-22 | Hoya Corp. | Photomask blank, photomask and method of making the same |
JP2011059502A (en) * | 2009-09-11 | 2011-03-24 | Hoya Corp | Photomask blank and manufacturing method of photomask |
JP2011227461A (en) * | 2010-03-30 | 2011-11-10 | Hoya Corp | Mask blank, transfer mask, methods for manufacturing the same, and method for manufacturing semiconductor device |
JP2012008606A (en) * | 2008-02-27 | 2012-01-12 | Hoya Corp | Photomask blank, photomask, and method for manufacturing photomask |
JP2012242634A (en) * | 2011-05-20 | 2012-12-10 | Hoya Corp | Method for manufacturing mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
US8524421B2 (en) | 2010-03-30 | 2013-09-03 | Hoya Corporation | Mask blank, transfer mask, methods of manufacturing the same and method of manufacturing a semiconductor device |
JP2014194564A (en) * | 2006-09-15 | 2014-10-09 | Applied Materials Inc | Photomask possessing self-masking layer and etching method for the same |
JP2016145993A (en) * | 2016-04-08 | 2016-08-12 | Hoya株式会社 | Mask blank production method, transfer mask production method, and semiconductor device production method |
TWI569093B (en) * | 2011-09-28 | 2017-02-01 | Hoya股份有限公司 | Mask blank, transfer mask, method of manufacturing transfer mask and method of manufacturing semiconductor device |
-
1981
- 1981-03-31 JP JP4792381A patent/JPS57161857A/en active Granted
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6280656A (en) * | 1985-10-04 | 1987-04-14 | Toppan Printing Co Ltd | Photomask blank and photomask |
JP2002246299A (en) * | 2001-02-20 | 2002-08-30 | Oki Electric Ind Co Ltd | Reflecting type exposure mask, its manufacturing method and semiconductor element |
JP2004361507A (en) * | 2003-06-02 | 2004-12-24 | Renesas Technology Corp | Method for manufacturing photomask and photomask drawing system |
JP2014194564A (en) * | 2006-09-15 | 2014-10-09 | Applied Materials Inc | Photomask possessing self-masking layer and etching method for the same |
US8283092B2 (en) | 2008-02-27 | 2012-10-09 | Hoya Corporation | Photomask blank, photomask, and photomask manufacturing method |
DE102009010855A1 (en) | 2008-02-27 | 2009-10-15 | Hoya Corp. | Photomask blank, photomask, and method of making a photomask |
DE102009010854A1 (en) | 2008-02-27 | 2009-10-22 | Hoya Corp. | Photomask blank, photomask and method of making the same |
US8518609B2 (en) | 2008-02-27 | 2013-08-27 | Hoya Corporation | Photomask blank, photomask, and photomask manufacturing method |
JP2012008606A (en) * | 2008-02-27 | 2012-01-12 | Hoya Corp | Photomask blank, photomask, and method for manufacturing photomask |
US8137868B2 (en) | 2008-02-27 | 2012-03-20 | Hoya Corporation | Photomask blank, photomask, and methods of manufacturing the same |
US8137867B2 (en) | 2008-02-27 | 2012-03-20 | Hoya Corporation | Photomask blank, photomask, and methods of manufacturing the same |
JP2011059502A (en) * | 2009-09-11 | 2011-03-24 | Hoya Corp | Photomask blank and manufacturing method of photomask |
US8435704B2 (en) | 2010-03-30 | 2013-05-07 | Hoya Corporation | Mask blank, transfer mask, and methods of manufacturing the same |
DE102011006354A1 (en) | 2010-03-30 | 2012-01-12 | Hoya Corp. | Mask blank, transfer mask, method for its production and method for producing a semiconductor device |
US8524421B2 (en) | 2010-03-30 | 2013-09-03 | Hoya Corporation | Mask blank, transfer mask, methods of manufacturing the same and method of manufacturing a semiconductor device |
JP2011227461A (en) * | 2010-03-30 | 2011-11-10 | Hoya Corp | Mask blank, transfer mask, methods for manufacturing the same, and method for manufacturing semiconductor device |
JP2015121827A (en) * | 2010-03-30 | 2015-07-02 | Hoya株式会社 | Mask blank, mask for transfer, and method for manufacturing semiconductor device |
US9140980B2 (en) | 2010-03-30 | 2015-09-22 | Hoya Corporation | Method of manufacturing a transfer mask and method of manufacturing a semiconductor device |
JP2012242634A (en) * | 2011-05-20 | 2012-12-10 | Hoya Corp | Method for manufacturing mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
TWI569093B (en) * | 2011-09-28 | 2017-02-01 | Hoya股份有限公司 | Mask blank, transfer mask, method of manufacturing transfer mask and method of manufacturing semiconductor device |
JP2016145993A (en) * | 2016-04-08 | 2016-08-12 | Hoya株式会社 | Mask blank production method, transfer mask production method, and semiconductor device production method |
Also Published As
Publication number | Publication date |
---|---|
JPS6251461B2 (en) | 1987-10-30 |
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