JPS56130750A - Manufacture of mask - Google Patents

Manufacture of mask

Info

Publication number
JPS56130750A
JPS56130750A JP3593280A JP3593280A JPS56130750A JP S56130750 A JPS56130750 A JP S56130750A JP 3593280 A JP3593280 A JP 3593280A JP 3593280 A JP3593280 A JP 3593280A JP S56130750 A JPS56130750 A JP S56130750A
Authority
JP
Japan
Prior art keywords
thin film
thin
resist layer
film
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3593280A
Other languages
Japanese (ja)
Inventor
Yaichiro Watakabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3593280A priority Critical patent/JPS56130750A/en
Publication of JPS56130750A publication Critical patent/JPS56130750A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To manufacture a hard mask in a fine pattern with precision by plasma- etching a thin metallic film, having the light shielding property, on a substrate by using as a mask a thin patterned film having etching resistance in a lifting-off method of resist. CONSTITUTION:On transparent insulating substrate 1, thin film (light-shielding metallic film, the 1st thin film) 2 of Cr and resist layer 3 are provided and resist layer 3 is patterned to form opening 4. Next, thin films [thin film of metal (oxide) containing high-fusion-point metal or arsenic, the 2nd thin film] 21 of chromium oxide including tungsten are adhered onto resist layer 3 and to the part of opening 4 and then resist layer 3 and thin film 21 on it are removed together before chromium oxide thin film 21 is patterned. Next, said thin film 21 is used as a mask to plasma- etch Cr thin film 2 in an atmosphere of gaseous mixture plasma of halogen elements and oxygen, thereby obtaining a hard mask.
JP3593280A 1980-03-18 1980-03-18 Manufacture of mask Pending JPS56130750A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3593280A JPS56130750A (en) 1980-03-18 1980-03-18 Manufacture of mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3593280A JPS56130750A (en) 1980-03-18 1980-03-18 Manufacture of mask

Publications (1)

Publication Number Publication Date
JPS56130750A true JPS56130750A (en) 1981-10-13

Family

ID=12455794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3593280A Pending JPS56130750A (en) 1980-03-18 1980-03-18 Manufacture of mask

Country Status (1)

Country Link
JP (1) JPS56130750A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987006027A2 (en) * 1986-04-01 1987-10-08 Plessey Overseas Limited An etch technique for metal mask definition
US6811959B2 (en) 2002-03-04 2004-11-02 International Business Machines Corporation Hardmask/barrier layer for dry etching chrome films and improving post develop resist profiles on photomasks

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987006027A2 (en) * 1986-04-01 1987-10-08 Plessey Overseas Limited An etch technique for metal mask definition
WO1987006027A3 (en) * 1986-04-01 1987-12-30 Plessey Overseas An etch technique for metal mask definition
US6811959B2 (en) 2002-03-04 2004-11-02 International Business Machines Corporation Hardmask/barrier layer for dry etching chrome films and improving post develop resist profiles on photomasks
US6989219B2 (en) 2002-03-04 2006-01-24 International Business Machines Corporation Hardmask/barrier layer for dry etching chrome films and improving post develop resist profiles on photomasks

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