JPS5638475A - Fabrication of photomask - Google Patents

Fabrication of photomask

Info

Publication number
JPS5638475A
JPS5638475A JP11370779A JP11370779A JPS5638475A JP S5638475 A JPS5638475 A JP S5638475A JP 11370779 A JP11370779 A JP 11370779A JP 11370779 A JP11370779 A JP 11370779A JP S5638475 A JPS5638475 A JP S5638475A
Authority
JP
Japan
Prior art keywords
thin film
resist film
substrate plate
mark
standard
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11370779A
Other languages
Japanese (ja)
Other versions
JPS636862B2 (en
Inventor
Takeari Uema
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11370779A priority Critical patent/JPS5638475A/en
Publication of JPS5638475A publication Critical patent/JPS5638475A/en
Publication of JPS636862B2 publication Critical patent/JPS636862B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To obtain a photomask with high accuracy by a method wherein a metallic thin film on a predetermined place of a mask substrate plate is removed by etching to form a standard mark and electric beam is controlled by using this mark as a standard.
CONSTITUTION: By the standard mark provided on the mask substrate plate, the focusing of electric beam, the determination of an exposing position or the correction of lag are controlled. For example, the metal thin film 2 and a resist film 3 are provided on a glass substrate plate 1. A cross pattern 4 is provided to a predetermined position A, B, C, D of four corners on the resist film 3 and the metallic thin film 4 of that part is etched and removed by conventional light exposure and, thereafter, the resist film is removed by a solvent to obtain a standard mark 5A or the like. Moreover, a resist film 6 for electric beam exposure is coated. This base plate 7 of this mask is fixed to a base plate holder on a XY moving stage of an electron beam exposing apparatus and electron beam is irradiated and scanned. The position of the standard mark 5A or the like can be detected by the differential of electron irradiation coefficient of the glass substrate plate 1 and the etallic thin film 4 and various correcting controls can be carried out.
COPYRIGHT: (C)1981,JPO&Japio
JP11370779A 1979-09-05 1979-09-05 Fabrication of photomask Granted JPS5638475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11370779A JPS5638475A (en) 1979-09-05 1979-09-05 Fabrication of photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11370779A JPS5638475A (en) 1979-09-05 1979-09-05 Fabrication of photomask

Publications (2)

Publication Number Publication Date
JPS5638475A true JPS5638475A (en) 1981-04-13
JPS636862B2 JPS636862B2 (en) 1988-02-12

Family

ID=14619119

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11370779A Granted JPS5638475A (en) 1979-09-05 1979-09-05 Fabrication of photomask

Country Status (1)

Country Link
JP (1) JPS5638475A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6548213B2 (en) 1988-11-22 2003-04-15 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6482395B2 (en) 2015-06-15 2019-03-13 株式会社ブリヂストン Pneumatic tire

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5251874A (en) * 1975-10-22 1977-04-26 Jeol Ltd Electron beam exposure device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5251874A (en) * 1975-10-22 1977-04-26 Jeol Ltd Electron beam exposure device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6548213B2 (en) 1988-11-22 2003-04-15 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6733933B2 (en) 1988-11-22 2004-05-11 Renesas Technology Corporation Mask for manufacturing semiconductor device and method of manufacture thereof
US7008736B2 (en) 1988-11-22 2006-03-07 Renesas Technology Corp. Semiconductor integrated circuit device fabrication method using a mask having a phase shifting film covering region and an opening region

Also Published As

Publication number Publication date
JPS636862B2 (en) 1988-02-12

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