JPS56104334A - Photomask for contact exposure - Google Patents
Photomask for contact exposureInfo
- Publication number
- JPS56104334A JPS56104334A JP601180A JP601180A JPS56104334A JP S56104334 A JPS56104334 A JP S56104334A JP 601180 A JP601180 A JP 601180A JP 601180 A JP601180 A JP 601180A JP S56104334 A JPS56104334 A JP S56104334A
- Authority
- JP
- Japan
- Prior art keywords
- photomask
- substrate
- contact
- mask
- border
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
PURPOSE:To contact a photomask with the face, to be coated with a resists of the substrate to be treated without leaving any bubbles and to smooth separation of the photomask from the resist face after exposure, by irradiating the border of the glass substrate of a photomask for contact exposure with laser beams to form protuberances. CONSTITUTION:Glass substrate 2 is irradiated with YAG laser beams on >=3 point of the border before or after formation of pattern 3 to form about 3mum high protuberances 4 by melting the glass. Photomask 1 thus obtained is allowed to contact with the photoresist coated face of substrate 5 to be treated with pressing jigs 6, and at that time, as the atmosphere of mask 1 and substrate 5 is evacuated to vacuum, mask 1 begins to contact with substrate 5 from the center toward the border, permitting bubbles not to be left, therefore any gaps not to be caused, fluctuation of pattern size and deterioration of resolution to be prevented. Further, separation of the mask after completion of irradiation can be made easily.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP601180A JPS56104334A (en) | 1980-01-22 | 1980-01-22 | Photomask for contact exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP601180A JPS56104334A (en) | 1980-01-22 | 1980-01-22 | Photomask for contact exposure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56104334A true JPS56104334A (en) | 1981-08-20 |
Family
ID=11626767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP601180A Pending JPS56104334A (en) | 1980-01-22 | 1980-01-22 | Photomask for contact exposure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56104334A (en) |
-
1980
- 1980-01-22 JP JP601180A patent/JPS56104334A/en active Pending
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