JPS5727029A - Formation of mo pattern - Google Patents

Formation of mo pattern

Info

Publication number
JPS5727029A
JPS5727029A JP10125280A JP10125280A JPS5727029A JP S5727029 A JPS5727029 A JP S5727029A JP 10125280 A JP10125280 A JP 10125280A JP 10125280 A JP10125280 A JP 10125280A JP S5727029 A JPS5727029 A JP S5727029A
Authority
JP
Japan
Prior art keywords
pattern
etching
cms
adhered
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10125280A
Other languages
Japanese (ja)
Other versions
JPS6137774B2 (en
Inventor
Tadamasa Ogawa
Minoru Kobayashi
Masatoshi Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10125280A priority Critical patent/JPS5727029A/en
Publication of JPS5727029A publication Critical patent/JPS5727029A/en
Publication of JPS6137774B2 publication Critical patent/JPS6137774B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain an Mo pattern of high quality by a method wherein Mo is adhered on an Si substrate, and thus obtained Mo substrate is heat treated, etc., to form Mo oxide thereon, and chloromethylated polystyrene is applied thereon to form a resist pattern, and uniform and rapid etching is performed. CONSTITUTION:After Mo is adhered on the Si wafer by electron beam evaporation, heat treatment is performed to form the Mo oxide. Chloromethylated polystyrene (CMS) is applied thereon to form the resist pattern, and etching is performed. Accordingly generation of degenerated layer to be generated by Mo and CMS is avoided, and uniform etching is performed to form the favorable Mo pattern.
JP10125280A 1980-07-25 1980-07-25 Formation of mo pattern Granted JPS5727029A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10125280A JPS5727029A (en) 1980-07-25 1980-07-25 Formation of mo pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10125280A JPS5727029A (en) 1980-07-25 1980-07-25 Formation of mo pattern

Publications (2)

Publication Number Publication Date
JPS5727029A true JPS5727029A (en) 1982-02-13
JPS6137774B2 JPS6137774B2 (en) 1986-08-26

Family

ID=14295717

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10125280A Granted JPS5727029A (en) 1980-07-25 1980-07-25 Formation of mo pattern

Country Status (1)

Country Link
JP (1) JPS5727029A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123373A (en) * 1983-12-06 1985-07-02 齋藤　武雄 Heating vessel by latent heat
JPS6299558U (en) * 1985-12-13 1987-06-25
JPH01500507A (en) * 1986-07-02 1989-02-23 マックヴェイ，マーチン　リンゼイ insulated carry bag
JPH0517288U (en) * 1991-08-21 1993-03-05 日野自動車工業株式会社 Structure of mounting part for resin parts
JP2009069852A (en) * 2001-11-02 2009-04-02 Samsung Electronics Co Ltd Method for manufacturing reflection-transmission type liquid crystal display device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123373A (en) * 1983-12-06 1985-07-02 齋藤　武雄 Heating vessel by latent heat
JPS6299558U (en) * 1985-12-13 1987-06-25
JPH01500507A (en) * 1986-07-02 1989-02-23 マックヴェイ，マーチン　リンゼイ insulated carry bag
JPH0517288U (en) * 1991-08-21 1993-03-05 日野自動車工業株式会社 Structure of mounting part for resin parts
JP2009069852A (en) * 2001-11-02 2009-04-02 Samsung Electronics Co Ltd Method for manufacturing reflection-transmission type liquid crystal display device

Also Published As

Publication number Publication date
JPS6137774B2 (en) 1986-08-26

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