JPS5710928A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS5710928A
JPS5710928A JP8544580A JP8544580A JPS5710928A JP S5710928 A JPS5710928 A JP S5710928A JP 8544580 A JP8544580 A JP 8544580A JP 8544580 A JP8544580 A JP 8544580A JP S5710928 A JPS5710928 A JP S5710928A
Authority
JP
Japan
Prior art keywords
wafer
resist film
carbides
irradiated
desired pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8544580A
Other languages
Japanese (ja)
Inventor
Katsuya Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8544580A priority Critical patent/JPS5710928A/en
Publication of JPS5710928A publication Critical patent/JPS5710928A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form a stable wafer in high accuracy by a method wherein a substrate, on a resist film thereon the desired pattern is formed, is arranged in a high vacuum condition, electron beams are irradiated on the surface and a residual carbide on the resist film is removed. CONSTITUTION:The carbides 13 of the compositions of a resist thinly remain on the resist film 12, on which the desired pattern is made up, on the wafer 11. The wafer is disposed in a vessel 14 brought to the high vacuum condition, and the laser beams 16 are irradiated on the surface. The temperature of the wafer reached 700-1,100 deg.C, and the remaining carbides are evaporated, and removed from the surface of the wafer. Accordingly, pinholes due to the remaining carbides are removed, and the stable wafer in high accuracy can be formed.
JP8544580A 1980-06-24 1980-06-24 Manufacture of semiconductor element Pending JPS5710928A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8544580A JPS5710928A (en) 1980-06-24 1980-06-24 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8544580A JPS5710928A (en) 1980-06-24 1980-06-24 Manufacture of semiconductor element

Publications (1)

Publication Number Publication Date
JPS5710928A true JPS5710928A (en) 1982-01-20

Family

ID=13859066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8544580A Pending JPS5710928A (en) 1980-06-24 1980-06-24 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5710928A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5956730A (en) * 1982-09-24 1984-04-02 Fujitsu Ltd Removal of resist film
JPS62290811A (en) * 1986-04-17 1987-12-17 ミドレツクス・インタ−ナシヨナル・ビ−・ブイ．ロツテルダム・チユ−リツヒ・ブランチ Method and apparatus for producing metallized pellet

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5956730A (en) * 1982-09-24 1984-04-02 Fujitsu Ltd Removal of resist film
JPS62290811A (en) * 1986-04-17 1987-12-17 ミドレツクス・インタ−ナシヨナル・ビ−・ブイ．ロツテルダム・チユ−リツヒ・ブランチ Method and apparatus for producing metallized pellet
JPH0575808B2 (en) * 1986-04-17 1993-10-21 Midoretsukusu Intern Bv Rotsut

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