JPS56116626A - Pattern formation - Google Patents
Pattern formationInfo
- Publication number
- JPS56116626A JPS56116626A JP1908380A JP1908380A JPS56116626A JP S56116626 A JPS56116626 A JP S56116626A JP 1908380 A JP1908380 A JP 1908380A JP 1908380 A JP1908380 A JP 1908380A JP S56116626 A JPS56116626 A JP S56116626A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- si3n4
- sio2
- etching speed
- pattern formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000007261 regionalization Effects 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000003989 dielectric material Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000007769 metal material Substances 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
PURPOSE:To obtain a predetermined shaped pattern by diagrammatically irradiating lights or electron beams on the surface of a semiconductor material, a dielectric material or a metallic material wherein etching speed is selectively changed. CONSTITUTION:With an amorphous film 2 such as of Si or SiO2, Si3N4 or the like formed on an Si wafer 1 and with laser lights 3, 4 partially irradiated, parts 5, 6 are monocrystallized by Si and become high density by SiO2 or Si3N4 to reduce etching speed to 1/3 or below. The same effect will be obtained by a metal film such as Al. Then, a desired pattern will be obtained by photoetching. In this composition, a pattern will be formed without a resist and pattern accuracy will be improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1908380A JPS56116626A (en) | 1980-02-20 | 1980-02-20 | Pattern formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1908380A JPS56116626A (en) | 1980-02-20 | 1980-02-20 | Pattern formation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56116626A true JPS56116626A (en) | 1981-09-12 |
Family
ID=11989546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1908380A Pending JPS56116626A (en) | 1980-02-20 | 1980-02-20 | Pattern formation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56116626A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58142529A (en) * | 1982-02-18 | 1983-08-24 | Mitsubishi Electric Corp | Manufacture of semiconductor element |
| DE10163346A1 (en) * | 2001-12-21 | 2003-07-10 | Infineon Technologies Ag | Resistless lithography process for the production of fine structures |
| CN105097537A (en) * | 2014-05-12 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Forming method of fin type field effect transistor |
-
1980
- 1980-02-20 JP JP1908380A patent/JPS56116626A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58142529A (en) * | 1982-02-18 | 1983-08-24 | Mitsubishi Electric Corp | Manufacture of semiconductor element |
| DE10163346A1 (en) * | 2001-12-21 | 2003-07-10 | Infineon Technologies Ag | Resistless lithography process for the production of fine structures |
| US7318993B2 (en) | 2001-12-21 | 2008-01-15 | Infineon Technologies Ag | Resistless lithography method for fabricating fine structures |
| CN105097537A (en) * | 2014-05-12 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Forming method of fin type field effect transistor |
| CN105097537B (en) * | 2014-05-12 | 2019-09-27 | 中芯国际集成电路制造(上海)有限公司 | The forming method of fin field effect pipe |
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