JPS6473729A - Formation of thin film - Google Patents

Abstract

PURPOSE:To remove OH or C in an interlayer insulating film at low temperature and to uniformize connecting holes to be provided in the film afterwards by a method wherein, when a glass is coated on a substrate, is heated and cured and is used as the interlayer insulating film between metallic wirings, the glass is exposed to an active oxygen containing atmosphere generated by light irradiation during heating or after heating. CONSTITUTION:Al wiring patterns 23 are provided on a substrate 11, these exposed external surfaces are covered with an SiO2 film 13 formed by a plasma CVD method and a liquid glass is spin coated on the whole surface and is subjected to heating treatment. After that, the substrate 11 is held in an oxygen- containing atmosphere and an ArF excimer laser beam is irradiated to produce an insulating film 14 on the glass. Then, the whole surface is covered with an SiO2 film 15, a dry etching is performed using a resist pattern 16 having apertures to correspond to the patterns 12 as a mask to bore apertures to penetrate the films 13 and 14 and a second wiring pattern 17 consisting of Al is adhered on the exposed patterns 12. According to such a way, the amount of OH or C in the film 14 can be decreased and the precision of the apertures to be provided here is improved.